White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
1
WS512K32-XXX
512Kx32 SRAM MODULE, SMD 5962-94611
PRELIMINARY*
FEATURES
■Access Times of 70, 85, 100, 120ns
■Packaging
•66-pin, PGA Type, 1.185 inch square, Hermetic
Ceramic HIP (Package 401)
•66-pin, PGA Type, 1.385 inch square, Hermetic
Ceramic HIP (Package 402)
•68 lead, 40mm Hermetic Low Profile CQFP, 3.56mm
(0.140"), (Package 502)
•68 lead, Hermetic CQFP, 22.4mm (0.880 inch) square.
Designed to fit JEDEC 68 lead 0.990" CQFJ footprint.
– G2 (Package 500), 5.08mm (0.200 inch) high
– G2T (Package 509), 4.57mm (0.180 inch) high
■Organized as 512Kx32, User Configurable as 1024Kx16 or
2Mx8
■Commercial, Industrial and Military Temperature Ranges
■TTL Compatible Inputs and Outputs
■5 Volt Power Supply
■Low Power CMOS
■Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
■Weight
WS512K32-XG2X - 8 grams typical
WS512K32-XG2TX - 8 grams typical
WS512K32-XHX - 13 grams typical
WS512K32-XH2X - 13 grams typical
WS512K32-XG4TX - 20 grams typical
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
February 1998
FIG. 1 PIN CONFIGURATION FOR WS512K32-XHX
BLOCK DIAGRAM
TOP VIEW
512K x 8
8
I/O
0-7
WE
CS
11
512K x 8
8
I/O
8-15
WE
CS
22
512K x 8
8
I/O
16-23
WE
CS
33
512K x 8
8
I/O
24-31
WE
CS
44
A
0
-
18
OE
PIN DESCRIPTION
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
2
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
WS512K32-XXX
FIG. 3 PIN CONFIGURATION FOR WS512K32-XG4TX Low Profile
512K x 8
8
I/O
0-7
CS
CS
CS
CS
1
512K x 8
8
I/O
8-15
2
512K x 8
8
I/O
16-23
3
512K x 8
8
I/O
24-31
4
A
0-18
OE
WE
BLOCK DIAGRAM
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
2
OE
CS
4
A
17
A
18
NC
NC
NC
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
GND
CS
3
WE
A
6
A
7
A
8
A
9
A
10
V
CC
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE Write Enable
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
TOP VIEW
PIN DESCRIPTION
FIG. 2 PIN CONFIGURATION FOR WS512K32N-XH2X
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
BLOCK DIAGRAM
512K x 8
8
I/O
0-7
WE
CS
11
512K x 8
8
I/O
8-15
WE
CS
22
512K x 8
8
I/O
16-23
WE
CS
33
512K x 8
8
I/O
24-31
WE
CS
44
A
0
-
18
OE
TOP VIEW
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
3
FIG. 4 PIN CONFIGURATION FOR WS512K32-XG2X
AND WS512K32-XG2TX PIN DESCRIPTION
TOP VIEW
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
OE
CS
2
A
17
WE
2
WE
3
WE
4
A
18
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
GND
CS
4
WE
1
A
6
A
7
A
8
A
9
A
10
V
CC
0.940"
The White 68 lead G2/G2T
CQFP fills the same fit and
function as the JEDEC 68 lead
CQFJ or 68 PLCC. But the G2/
G2T has the TCE and lead
inspection advantage of the
CQFP form. BLOCK DIAGRAM
512K x 8
8
I/O
0-7
WE
CS
11
512K x 8
8
I/O
8-15
WE
CS
22
512K x 8
8
I/O
16-23
WE
CS
33
512K x 8
8
I/O
24-31
WE
CS
44
A
0
-
18
OE
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
OE Output Enable
VCC Power Supply
GND Ground
NC Not Connected
WS512K32-XXX
4
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 Vcc+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
WS512K32-XXX
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp (Mil) T A-55 +125 °C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
V
IN
= 0 V, f = 1.0 MHz
50 pF
WE1-4 capacitance C WE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA) 20
CQFP G4 50
CQFP G2 20
CQFP G2T 15
CS1-4 capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance CAD
V
IN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
Parameter Symbol Conditions Units
Min Typ Max
Data Retention Supply Voltage VDR CS ≥ VCC -0.2V 2.0 5.5 V
Data Retention Current ICCDR1 VCC = 3V 0.4 1.6 mA
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter Symbol Conditions Units
Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA
Operating Supply Current x 32 Mode ICC x 32 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 200 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 4.0 mA
Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 V
Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
LOW CAPACITANCE CQFP
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE VIN = 0 V, f = 1.0 MHz 32 pF
CQFP G4 capacitance CWE VIN = 0 V, f = 1.0 MHz 32 pF
CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 15 pF
Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 15 pF
Address input
capacitance CAD VIN = 0 V, f = 1.0 MHz 32 pF
This parameter is guaranteed by design but not tested.
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L H H Out Disable High Z Active
L X L Write Data In Active
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
5
FIG. 7
AC TEST CIRCUIT
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
Current Source
D.U.T.
C = 50 pf
eff
IOL
V ≈ 1.5V
(Bipolar Supply)
Z
Current Source OH
AC CHARACTERISTICS
(VCC = 5.0V, VSS =0V, TA = -55°C to +125°C)
WS512K32-XXX
AC TEST CONDITIONS
Parameter Symbol -70 -85 -100 -120 Units
Read Cycle Min Max Min Max Min Max Min Max
Read Cycle Time tRC 70 85 100 120 ns
Address Access Time tAA 70 85 100 120 ns
Output Hold from Address Change tOH 5555ns
Chip Select Access Time tACS 70 85 100 120 ns
Output Enable to Output Valid tOE 35 40 50 60 ns
Chip Select to Output in Low Z tCLZ110 10 10 10 ns
Output Enable to Output in Low Z tOLZ15555ns
Chip Disable to Output in High Z tCHZ125 25 35 35 ns
Output Disable to Output in High Z tOHZ125 25 35 35 ns
1. This parameter is guaranteed by design but not tested.
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
Parameter Symbol -70 -85 -100 -120 Units
Write Cycle Min Max Min Max Min Max Min Max
Write Cycle Time tWC 70 85 100 120 ns
Chip Select to End of Write tCW 60 75 80 100 ns
Address Valid to End of Write tAW 60 75 80 100 ns
Data Valid to End of Write tDW 30 30 40 40 ns
Write Pulse Width tWP 50 50 60 60 ns
Address Setup Time tAS 000 0ns
Address Hold Time tAH 555 5ns
Output Active from End of Write tOW1555 5ns
Write Enable to Output in High Z tWHZ125 25 35 35 ns
Data Hold from Write Time tDH 000 0ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, VSS =0V, TA = -55°C to +125°C)
6
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
WS512K32-XXX
WS32K32-XHX
FIG. 6
TIMING WAVEFORM - READ CYCLE
FIG. 8
WRITE CYCLE - CS CONTROLLED
FIG. 7
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
7
PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H)
30.1 (1.185) ± 0.38 (0.015) SQ
25.4 (1.0) TYP
15.24 (0.600) TYP
0.76 (0.030) ± 0.1 (0.005)
6.22 (0.245)
MAX
3.81 (0.150)
± 0.1 (0.005)
2.54 (0.100)
TYP
25.4 (1.0) TYP
1.27 (0.050) ± 0.1 (0.005)
1.27 (0.050) TYP DIA
0.46 (0.018) ± 0.05 (0.002) DIA
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WS512K32-XXX
PACKAGE 402: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2)
35.2 (1.385) ± 0.38 (0.015) SQ
25.4 (1.0) TYP
15.24 (0.600) TYP
0.76 (0.030) ± 0.1 (0.005)
5.7 (0.223)
MAX
3.81 (0.150)
± 0.1 (0.005)
2.54 (0.100)
TYP
25.4 (1.0) TYP
1.27 (0.050) ± 0.1 (0.005)
1.27 (0.050) TYP DIA
0.46 (0.018) ± 0.05 (0.002) DIA
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
8
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
WS512K32-XXX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)
38 (1.50) TYP
4 PLACES
0.38 (0.015)
± 0.08 (0.003)
68 PLACES
1.27 (0.050)
TYP
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
0.25 (0.010)
± 0.05 (0.002)
PIN 1 IDENTIFIER Pin 1
39.6 (1.56) ± 0.38 (0.015) SQ 3.56 (0.140) MAX
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
9
WS512K32-XXX
PACKAGE 500: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2)
0.38 (0.015) ± 0.05 (0.002)
0.25 (0.010) ± 0.1 (0.002)
25.1 (0.990) ± 0.25 (0.010) SQ
1.27 (0.050) TYP
24.0 (0.946)
± 0.25 (0.010)
22.4 (0.880) ± 0.25 (0.010) SQ
20.3 (0.800) REF
5.1 (0.200) MAX
0.25 (0.010)
± 0.127 (0.005)
23.87
(0.940) REF
1.0 (0.040)
± 0.127 (0.005)
0.25 (0.010) REF
1° / 7°
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
0.940"
TYP
The White 68 lead G2 CQFP fills
the same fit and function as the
JEDEC 68 lead CQFJ or 68 PLCC.
But the G2 has the TCE and lead
inspection advantage of the
CQFP form.
10
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
0.38 (0.015) ± 0.05 (0.002)
0.27 (0.011) ± 0.04 (0.002)
25.15 (0.990) ± 0.26 (0.010) SQ
1.27 (0.050) TYP
24.03 (0.946)
± 0.26 (0.010)
22.36 (0.880) ± 0.26 (0.010) SQ
20.3 (0.800) REF
4.57 (0.180) MAX
0.19 (0.007)
± 0.06 (0.002)
23.87
(0.940) REF
1.0 (0.040)
± 0.127 (0.005)
0.25 (0.010) REF
1° / 7°
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
0.940"
TYP
The White 68 lead G2T CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G2T has the TCE
and lead inspection advantage
of the CQFP form.
WS512K32-XXX
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
11
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
SPECIAL PROCESSING:
E = Epitaxial Layer
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C
I = Industrial -40°C to 85°C
C = Commercial 0°C to +70°C
PACKAGE TYPE:
H = Ceramic Hex-In-line Package, HIP (Package 401)
H2 = Ceramic Hex-In-line Package, HIP (Package 402)
G2 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 500)
G2T = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 509)
G4T = 40mm Low Profile CQFP (Package 502)
ACCESS TIME (ns)
IMPROVEMENT MARK:
N = No Connect at pin 21 and 39 in HIP for Upgrades
F = Low Capacitance CQFP
ORGANIZATION, 512Kx32
User configurable as 1Mx16 or 2Mx8
SRAM
WHITE MICROELECTRONICS
WS512K32-XXX
W S 512K 32 X - XXX X X X X
12
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
SRAM MODULES
WS512K32-XXX
DEVICE TYPE SPEED PACKAGE SMD NO.
512K x 32 SRAM Module 120ns 66 pin HIP (H) 5962-94611 01H_X
512K x 32 SRAM Module 100ns 66 pin HIP (H) 5962-94611 02H_X
512K x 32 SRAM Module 85ns 66 pin HIP (H) 5962-94611 03H_X
512K x 32 SRAM Module 70ns 66 pin HIP (H) 5962-94611 04H_X
512K x 32 SRAM Module 120ns 66 pin HIP (H2) 5962-94611 01HXX
512K x 32 SRAM Module 100ns 66 pin HIP (H2) 5962-94611 02HXX
512K x 32 SRAM Module 85ns 66 pin HIP (H2) 5962-94611 03HXX
512K x 32 SRAM Module 70ns 66 pin HIP (H2) 5962-94611 04HXX
512K x 32 SRAM Module 120ns 68 pin CQFP Low Profile (G4T) 5962-94611 01HZX
512K x 32 SRAM Module 100ns 68 pin CQFP Low Profile (G4T) 5962-94611 02HZX
512K x 32 SRAM Module 85ns 68 pin CQFP Low Profile (G4T) 5962-94611 03HZX
512K x 32 SRAM Module 70ns 68 pin CQFP Low Profile (G4T) 5962-94611 04HZX
512K x 32 SRAM Module 120ns 68 pin CQFP/J (G2) 5962-94611 01HMX
512K x 32 SRAM Module 100ns 68 pin CQFP/J (G2) 5962-94611 02HMX
512K x 32 SRAM Module 85ns 68 pin CQFP/J (G2) 5962-94611 03HMX
512K x 32 SRAM Module 70ns 68 pin CQFP/J (G2) 5962-94611 04HMX
512K x 32 SRAM Module 120ns 68 lead CQFP/J (G2T) 5962-94611 01HMX
512K x 32 SRAM Module 100ns 68 lead CQFP/J (G2T) 5962-94611 02HMX
512K x 32 SRAM Module 85ns 68 lead CQFP/J (G2T) 5962-94611 03HMX
512K x 32 SRAM Module 70ns 68 lead CQFP/J (G2T) 5962-94611 04HMX
