2N6659 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. * Switching Regulators * Converters 5.08 (0.200) typ. 2.54 (0.100) 2 1 * Motor Drivers 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 METAL PACKAGE Underside View PIN 1 - Source PIN 3 - Drain PIN 2 - Gate CASE - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS Drain - Source Voltage 35V VGS Gate - Source Voltage 20V ID Drain Current @ TCASE = 25C 1.4A ID Drain Current @ TCASE = 100C 1A IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25C 6.25W PD Power Dissipation @ TCASE = 100C 2.5W Tj Operating Junction Temperature Range -55 to 150C Tstg Storage Temperature Range -55 to 150C TL Lead Temperature (1/16" from case for 10 sec.) 3A 300C * Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/00 2N6659 ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter Test Conditions STATIC CHARACTERISTICS Min. Typ. V(BR)DSS Gate - Source Breakdown Voltage VGS = 0V ID = 10mA 35 70 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1mA 0.8 1.6 IGSS Gate - Body Leakage Current IDSS Zero Gate Voltage Drain Current VGS = 15V VDS = 0V TCASE = 125C VDS = 90V VGS = 0V VDS = 72V VGS = 0V On-State Drain Current RDS(on)* Drain - Source On Resistance VDS(on)* Drain - Source On Voltage VDS = 15V VGS = 10V 500 10 500 VGS = 5V ID = 0.3A 1.5 VGS = 10V 1.8 1.8 5 1.3 1.8 TCASE = 125C 2.6 3.6 VGS = 5V ID = 0.3A 0.54 1.5 1.3 1.8 2.6 3.6 ID = 1A TCASE = 125C gFS* Forward Transconductance VDS = 10V ID = 0.5A gOS* Common Source Output Conductance VDS = 10V ID = 0.1A Small Signal Drain - Source VGS = 10V ID = 1A On Resistance f = 1kHz 170 nA mA A ID = 1A VGS = 10V Unit V 2 100 TCASE = 125C ID(on)* Max. 350 W V ms ms 1100 DYNAMIC CHARACTERISTICS RDS(on) Cds Drain - Source Capacitance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 24V VGS = 0V f = 1MHz 1.3 1.8 30 40 35 50 28 40 2 10 8 10 9 10 W pF SWITCHING CHARACTERISTICS tON Turn-On Time tOFF Turn-Off Time VDD = 25V RL = 23W VGEN = 10V RG = 25W ID = 1A ns * Pulse Test: tp 80 ms , d 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/00