D1001UK
Document Number 6215
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
50W
70V
±20V
5A
–65 to 150°C
200°C
MECHANICAL DATA
12
34
A
M
F
E
D
C
B
HJ
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
DA
PIN 1 SOURCE
PIN 3 SOURCE
PIN 2 DRAIN
PIN 4 GATE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 24.76 0.13 0.975 0.005
B 18.42 0.13 0.725 0.005
C45°5°45°5°
D 6.35 0.13 0.25 0.005
E 3.17 0.13 0.125 DIA 0.005
F 5.71 0.13 0.225 0.005
G 9.52 0.13 0.375 0.005
H 6.60 REF 0.260 REF
I 0.13 0.02 0.005 0.001
J 4.32 0.13 0.170 0.005
K 2.54 0.13 0.100 0.005
M 20.32 0.25 0.800 0.010
ROHS COMPLIANT
D1001UK
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 100mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 1A
PO= 20W
VDS = 28V IDQ = 0.1A
f = 175MHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VGS = 20V IDS = 2.5A
V
mA
µA
V
S
dB
%
—
pF
pF
pF
Ω
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
ηDrain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rdson Saturation Resistance
70
1
1
17
0.8
16
50
20:1 60
30
2.5
1
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 3.5°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
Document Number 6215
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
D1001UK
Document Number 6215
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
0
5
10
15
20
25
30
35
40
45
P out
W
0
10
20
30
40
50
60
70
80
90
Efficiency
%
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P in W Pout
Drain Efficiency
V
DS
= 28V
Z
DQ
= 0.1A
f = 175MHz
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
P in W
0
5
10
15
20
25
30
35
40
45
P out
W
10
11
12
13
14
15
16
17
18
19
Gain
dB
Pout
Gain
V
DS
= 28V
Z
DQ
= 0.1A
f = 175MHz
Figure 1 – Power Output and Efficiency
vs. Power Input. Figure 2 – Power Output & Gain
vs. Power Input.
0 5 10 15 20 25 30 35 40
P out W PEP
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
IDQ = 0.1A
IDQ = 0.5A
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
Figure 3 – IMD vs. Output Power.
D1001UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency ZSZL
MHz ΩΩ
175MHz 5 + j14 12 – j14
!Freq S11 S21 S12 S22
MHz mag ang mag ang mag ang mag ang
50 0.780 -116 18 112 0.034 25 0.642 -85
100 0.775 -135 9.312 85 0.030 11 0.577 -103
150 0.795 -149 6.077 68 0.022 14 0.613 -116
200 0.826 -159 4.193 53 0.017 44 0.669 -128
250 0.853 -169 3.216 43 0.023 74 0.715 -139
300 0.878 -179 2.566 35 0.039 89 0.759 -150
350 0.903 171 1.991 23 0.052 86 0.801 -161
400 0.923 161 1.655 18 0.070 84 0.839 -173
450 0.944 151 1.322 9 0.080 80 0.878 177
500 0.963 142 1.121 4 0.098 76 0.914 167
550 0.978 136 0.899 -2 0.108 72 0.945 159
600 0.985 131 0.762 -7 0.119 66 0.966 153
!V
DS = 28V, IDQ = 0.1A
# MHZ S MA R 50
Typical S Parameters
D1001UK
Document Number 6215
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00
VDS (V)
IDS (A)
Vg=13 V
Vg=12 V
Vg=11 V
Vg=10 V
Vg=9V
Vg=8 V
Vg=7 V
Vg=6 V
Vg=5 V
1
10
100
0 5 10 15 20 25 30
Vds V
Capacitance pF
Output capacitance
Input Capacitance
Reverse transfer capacitance
Figure 4 – Typical IV Characteristics.
Figure 5 – Typical CV Characteristics.
D1001UK
Document Number
6215
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
10K
10K
L2
L4
15
10nF 10nF
10-30pF
10-30pF
D1001UK
L1
4.7pF
1nF100nF 10uF
L3 16-100pF
16-100pF
T1 T2
+28V
Gate-Bias
T3
9 x 6 mm
contact pad
9 x 6mm
contact
pad
T4
Substrate 1.6mm PTFE/glass, Er=2.5
All microstrip lines W=4.4mm
D1001UK 175MHz TEST FIXTURE
T1 10mm
T2 13mm
T3 12mm
T4 4mm
L1 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L2 10 turns 19swg enamelled copper wire, 6mm i.d.
L3 1.5 turns 22swg enamelled copper wire, 6mm i.d.
L4 13.5 turns 19swg enamelled copper wire on
Siemens B64920A618X830 ferrite core
