BC 807W / BC 808W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP 20.1 10.1 Type Code 1 1.250.1 3 2.10.1 0.3 PNP Power dissipation - Verlustleistung 225 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 807W BC 808W Collector-Emitter-voltage B open - VCE0 45 V 25 V Collector-Emitter-voltage B shorted - VCES 50 V 30 V Collector-Base-voltage E open - VCB0 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 225 mW 1) Collector current - Kollektorstrom (DC) - IC 500 mA Peak Coll. current - Kollektor-Spitzenstrom - ICM 1000 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom IEM 1000 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 500 mA - VCE = 1 V, - IC = 100 mA 1 BC807W BC808W hFE 100 - 600 hFE 40 - - Group -16W hFE 100 160 250 Group -25W hFE 160 250 400 Group -40W hFE 250 400 600 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 4 01.11.2003 General Purpose Transistors BC 807W / BC 808W Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. - - 0.7 V - VBEsat - - 1.3 V - VBE - - 1.2 V Collector saturation voltage - Kollektor-Sattigungsspg. - IC = 500 mA, - IB = 50 mA - VCEsat Base saturation voltage - Basis-Sattigungsspannung - IC = 500 mA, - IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 20 V - ICB0 - - 100 nA IE = 0, - VCB = 20 V, Tj = 150/C - ICB0 - - 5 :A - IEB0 - - 100 nA 80 MHz 100 MHz - - 10 pF - Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 4 V Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Strom verstarkungsgruppen pro Typ BC 807-16W = 5A 620 K/W 1) BC 817W / BC 818W BC 807-25W = 5B BC 807-40W = 5C BC 808-25W = 5F BC 808-40W = 5G BC 807W = 5D BC 808-16W = 5E BC 808W = 5H 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 5