SCH1406 Ordering number : EN7749A N-Channel Silicon MOSFET SCH1406 General-Purpose Switching Device Applications Features * Low ON-resistance. * Ultrahigh-speed switching. * 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW10s, duty cycle1% Unit 20 V 10 V 1.7 A 4.8 Mounted on a ceramic board (900mm20.8mm) A 0.8 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) Ratings min typ ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V 20 VDS=10V, ID=1mA 0.4 1.9 Unit max V 1 A 10 A 1.3 yfs RDS(on)1 VDS=10V, ID=1A ID=1A, VGS=4V 160 210 m Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=0.5A, VGS=2.5V 200 280 m ID=0.1A, VGS=1.8V 280 390 m Marking : KF (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 2.8 V Forward Transfer Admittance S Continued on next page. www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: SCH1406/D SCH1406 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD min typ VDS=10V, f=1MHz VDS=10V, f=1MHz td(off) tf Fall Time Ratings Conditions Unit max 100 pF 22 pF 15 pF VDS=10V, f=1MHz See specified Test Circuit 5.5 ns See specified Test Circuit 18 ns See specified Test Circuit 17 ns See specified Test Circuit 8 ns VDS=10V, VGS=10V, ID=1.2A VDS=10V, VGS=10V, ID=1.2A 4.5 nC 0.4 nC VDS=10V, VGS=10V, ID=1.2A IS=--1.2A, VGS=0V 0.4 Package Dimensions nC 0.9 1.2 V Switching Time Test Circuit unit : mm (typ) 7028-002 VDD=10V VIN 4V 0V 1.6 0.2 ID=1A RL=10 VIN D 1.5 VOUT PW=10s D.C.1% 2 3 0.5 1 G 0.56 0.05 1.6 0.05 0.2 6 5 4 0.25 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH1406 P.G 50 S SANYO : SCH6 0.4 1.0 0.8 0.6 0.4 VGS=1.0V C --25 C Ta= 1.2 75 C C 0.8 1.4 25 C 0.2 --25 V 1.5 Ta= Drain Current, ID -- A 3.0V 1.6 75 2.5 V 4.0V 6.0V 1.2 VDS=10V 1.8 10.0V Drain Current, ID -- A 1.6 ID -- VGS 2.0 25 C ID -- VDS 2.0 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 0 0.2 IT02983 Rev.0 I Page 2 of 4 I www.onsemi.com 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 2.0 IT02984 SCH1406 RDS(on) -- VGS Ta=25C 350 300 1.0A 250 ID=0.5A 200 150 100 2 4 6 8 10 0 0V V 2.5 S= A, VG 0.5 I D= 150 100 --40 --20 0 20 40 60 80 100 120 140 VDS=10V 160 IT02986 IS -- VSD 5 VGS=0V 3 3 2 1.0 7 5 C 5 --2 = C Ta 75 3 2 0.1 7 5 1.0 7 5 3 2 0.1 7 5 3 3 2 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 0.01 0.3 2 3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V 1.2 IT02988 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 0.4 IT02987 SW Time -- ID 100 5C 25 C --25 C C 25 Ta= 7 2 0.01 0.001 f=1MHz 2 Ciss, Coss, Crss -- pF 5 tr Switching Time, SW Time -- ns 1. I D= 200 4. S= A, VG Ambient Temperature, Ta -- C yfs -- ID 7 5 250 IT02985 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 300 50 --60 50 0 RDS(on) -- Ta 350 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 400 3 td(off) 2 10 tf 7 td(on) 5 Ciss 100 7 5 3 Coss 2 Crss 3 2 0.1 10 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0 10 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1 0 0 1 2 4 3 4 Total Gate Charge, Qg -- nC 5 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V VDS=10V ID=1.2A 9 2 IT02989 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 5 18 20 IT02990 ASO IDP=4.8A PW10s 10 0 1m s ID=1.7A s 1 10 0m D 0m s C op s er at io n (T a= 25 C Operation in this ) area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 0.01 0.01 IT07147 Rev.0 I Page 3 of 4 I www.onsemi.com 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT07148 SCH1406 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 0 .8m m ) 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 IT07149 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer's technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. % !" "& ' " " !"# $% & !'#'"# !!'((' ! ) * $%+ & !!'" "'- ) * & . " & ./&++000 + & (" #-! "-! *& !'#'"# !!'((' # ) * $%+ ! ! & , . " #$&www.onsemi.com $%+ & ''##' ! Rev.0 I Page 4 of 4 I www.onsemi.com * 2/ / 1 SCH1406/D