LM4140BCM-1.2/NOPB - Texas Instruments

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM4140

SNVS053F –JUNE 2000–REVISED SEPTEMBER 2016

LM4140 High Precision Low Noise Low Dropout Voltage Reference

1 Features

1• High Initial Accuracy: 0.1%

• Ultra-Low Noise

• Low Temperature Coefficient: 3 ppm/°C (A Grade)

• Low Voltage Operation: 1.8V

• Low Dropout Voltage: 20 mV (Typical) at 1mA

• Supply Current: 230 µA (Typical), ≤1 µA Disable

Mode

• Enable Pin

• Output Voltage Options: 1.024 V, 1.25 V, 2.048 V,

2.5 V, and 4.096 V

• Custom Voltages From 0.5 V to 4.5 V

• Temperature Range: 0°C to 70°C

2 Applications

• Portable, Battery-Powered Equipment

• Instrumentation and Test Equipment

• Automotive

• Industrial Process Control

• Data Acquisition Systems

• Medical Equipment

• Precision Scales

• Servo Systems

• Battery Charging

3 Description

The LM4140 series of precision references are

designed to combine high accuracy, low drift, and

noise with low power dissipation in a small package.

The LM4140 is the industry's first reference with

output voltage options lower than the bandgap

voltage.

The key to the advance performance of the LM4140

is the use of EEPROM registers and CMOS DACs for

temperature coefficient curvature correction and

trimming of the output voltage accuracy of the device

during the final production testing.

The major advantage of this method is the much

higher resolution available with DACs than is

available economically with most methods used by

other bandgap references.

The low input and dropout voltage, low supply

current, and output drive capability of the LM4140

makes this product an ideal choice for battery

powered and portable applications.

The LM4140 is available in three grades (A, B, C)

with 0.1% initial accuracy and 3, 6, and 10 ppm/°C

temperature coefficients. For even lower temperature

coefficients, contact Texas Instruments.

The device performance is specified over the

temperature range 0°C to 70°C, and is available in

compact 8-pin package.

For other output voltage options from 0.5 V to 4.5 V,

contact Texas Instruments.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM4140 SOIC (8) 4.90 mm × 3.91 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Typical Application

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 6

7 Detailed Description............................................ 10

7.1 Overview................................................................. 10

7.2 Functional Block Diagram....................................... 10

7.3 Feature Description................................................. 10

7.4 Device Functional Modes........................................ 10

8 Application and Implementation ........................ 11

8.1 Application Information............................................ 11

8.2 Typical Applications ................................................ 14

9 Power Supply Recommendations...................... 20

10 Layout................................................................... 20

10.1 Layout Guidelines ................................................. 20

10.2 Layout Example .................................................... 20

11 Device and Documentation Support................. 21

11.1 Receiving Notification of Documentation Updates 21

11.2 Community Resources.......................................... 21

11.3 Trademarks........................................................... 21

11.4 Electrostatic Discharge Caution............................ 21

11.5 Glossary................................................................ 21

12 Mechanical, Packaging, and Orderable

Information........................................................... 21

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision E (April 2013) to Revision F Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section.................................................................................................. 1

• Added Thermal Information table........................................................................................................................................... 4

Changes from Revision D (April 2005) to Revision E Page

• Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1

1Ground 8 Ground

2VIN 7 Ground

3Enable 6 VREF

4Ground 5 NC

Not to scale

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(1) G = Ground, I = Input, O = Output

5 Pin Configuration and Functions

D Package

8-Pin SOIC

Top View

Pin Functions

PIN TYPE(1) DESCRIPTION

NAME NO.

Enable 3 I Pulled to input for normal operation. Forcing this pin to ground turns off the output.

Ground 1, 4, 7, 8 G Negative supply or ground connection. These pins must be connected to ground.

NC 5 — This pin must be left open.

VIN 2 I Positive supply.

VREF 6 O Reference output. Capable of sourcing up to 8 mA.

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Without PCB copper enhancements. The maximum power dissipation must be derated at elevated temperatures and is limited by TJMAX

(maximum junction temperature), RθJA (junction to ambient thermal resistance) and TA(ambient temperature). The maximum power

dissipation at any temperature is: PDissMAX = (TJMAX −TA)/RθJA up to the value listed in the Absolute Maximum Ratings. The RθJA for

the 8-pin SOIC package is 160°C/W.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN MAX UNIT

Maximum voltage on any input pin –0.3 5.6 V

Output short-circuit duration Indefinite

Power dissipation (TA= 25°C)(2) 345 mW

Storage temperature, Tstg –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±200

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT

Ambient temperature 0 70 °C

Junction temperature 0 80 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1) LM4140

UNITD (SOIC)

8 PINS

RθJA Junction-to-ambient thermal resistance 119.3 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 52.3 °C/W

RθJB Junction-to-board thermal resistance 60.3 °C/W

ψJT Junction-to-top characterization parameter 14.5 °C/W

ψJB Junction-to-board characterization parameter 59.7 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W

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(1) For proper operation, a 1-µF capacitor is required between the output pin and the GND pin of the device.

(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical

Quality Control (SQC) methods. The limits are used to calculate TI's Average Outgoing Quality Level (AOQL).

(3) Typical numbers are at 25°C and represent the most likely parametric norm.

(4) High temperature and mechanical stress associated with PCB assembly can have significant impact on the initial accuracy of the

LM4140 and may create significant shifts in VREF.

(5) Thermal hysteresis is defined as the changes in 25°C output voltage before and after the cycling of the device from 0°C to 70°C.

(6) Dropout voltage is defined as the minimum input to output differential voltage at which the output voltage drops by 0.5% below the value

measured with VIN = 3 V for the 1.024-V and 1.25-V, VIN = 5 V for all other voltage options.

(7) The output noise is based on 1.024 V option. Output noise is linearly proportional to VREF.

6.5 Electrical Characteristics

VIN = 3 V for the 1.024-V and 1.25-V, VIN = 5 V for all other voltage options, VEN = VIN, COUT = 1 µF(1), ILOAD = 1 mA, and

TA= TJ= 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT

VREF Output voltage initial

accuracy(4) All versions ±0.1%

TCVREF/°C Temperature coefficient 0°C ≤TA≤70°C

A grade 3

ppm/°CB grade 6

C grade 10

ΔVREF/ΔVIN Line regulation

1.024-V and 1.25-V options, 1.8 V ≤VIN ≤5.5 V TA= 25°C 50 300

ppm/V

0°C ≤TA≤70°C 350

All other voltage options,

Vref + 200 mV ≤VIN ≤5.5 V TA= 25°C 20 200

0°C ≤TA≤70°C 250

ΔVREF/ΔILOAD Load regulation 1 mA ≤ILOAD ≤8 mA

All other voltage options TA= 25°C 1 20

ppm/mA

0°C ≤TA≤70°C 150

4.096-V option TA= 25°C 5 35

0°C ≤TA≤70°C 150

ΔVREF Long-term stability 1000 hours 60 ppm

ΔVREF Thermal hysteresis(5) 0°C ≤TA≤+ 70°C 20 ppm

Operating voltage 1.024-V and 1.25-V options, IL= 1 mA to 8 mA, 0°C ≤TA≤70°C 1.8 5.5 V

VIN-VREF Dropout voltage(6)

2.048-V and 2.5-V

options

IL= 1 mA TA= 25°C 20 40

0°C ≤TA≤70°C 45

IL= 8 mA TA= 25°C 160 235

0°C ≤TA≤70°C 400

4.096-V option

IL= 1 mA TA= 25°C 20 40

0°C ≤TA≤70°C 45

IL= 8 mA TA= 25°C 195 270

0°C ≤TA≤70°C 490

VNOutput noise voltage(7) 0.1 Hz to 10 Hz 2.2 µVPP

IS(ON) Supply current ILOAD = 0 mA

All other voltage options TA= 25°C 230 320

µA

0°C ≤TA≤70°C 375

4.096-V option TA= 25°C 265 350

0°C ≤TA≤70°C 400

IS(OFF) Supply current VEnable < 0.4 V TA= 25°C 0.01 µA

0°C ≤TA≤70°C 1

VHLogic high input voltage 0°C ≤TA≤70°C 0.8 × VIN V

IHLogic high input current 2 nA

VLLogic low input voltage 0°C ≤TA≤70°C 0.4 V

ILLogic low input current 1 nA

ISC Short-circuit current TA= 25°C 8.5 20 35 mA

0°C ≤TA≤70°C 40

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6.6 Typical Characteristics

TA= 25°C, no load, COUT = 1 µF, VIN = 3 V for 1.024-V and 1.25-V, and 5 V for all other voltage options, and VIN = VEN

(unless otherwise noted). The 1-µF output capacitor is actively discharged to ground (see ON/OFF Operation for more

details).

Figure 1. Power Up and Down Ground Current Figure 2. Enable Response

Figure 3. Line Transient Response Figure 4. Load Transient Response

Figure 5. Output Impedance Figure 6. Power Supply Rejection Ratio

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Typical Characteristics (continued)

TA= 25°C, no load, COUT = 1 µF, VIN = 3 V for 1.024-V and 1.25-V, and 5 V for all other voltage options, and VIN = VEN

(unless otherwise noted). The 1-µF output capacitor is actively discharged to ground (see ON/OFF Operation for more

details).

1.024-V and 1.25-V options require 1.8-V supply

Figure 7. Dropout Voltage vs Load Current Figure 8. Output Voltage Change vs Sink Current (ISINK)

Figure 9. Total Current (IS(OFF)) vs Supply Voltage Figure 10. Total Current (IS(ON)) vs Supply Voltage

Figure 11. Spectral Noise Density (0.1 Hz to 10 Hz) Figure 12. Spectral Noise Density (10 Hz to 100 kHz)

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Typical Characteristics (continued)

TA= 25°C, no load, COUT = 1 µF, VIN = 3 V for 1.024-V and 1.25-V, and 5 V for all other voltage options, and VIN = VEN

(unless otherwise noted). The 1-µF output capacitor is actively discharged to ground (see ON/OFF Operation for more

details).

Figure 13. Ground Current vs Load Current Figure 14. Long-Term Drift

Figure 15. Load Regulation vs Temperature Figure 16. Output Voltage vs Load Current

Figure 17. Line Regulation vs Temperature Figure 18. IQvs Temperature

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Typical Characteristics (continued)

TA= 25°C, no load, COUT = 1 µF, VIN = 3 V for 1.024-V and 1.25-V, and 5 V for all other voltage options, and VIN = VEN

(unless otherwise noted). The 1-µF output capacitor is actively discharged to ground (see ON/OFF Operation for more

details).

Figure 19. Short-Circuit Current vs Temperature Figure 20. Dropout Voltage vs Load Current (VOUT) = 2 V

Figure 21. Typical Temperature Coefficient (Sample of 5 Parts)

Bandgap

Cell

VIN

VOUT

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7 Detailed Description

7.1 Overview

The LM4140 device is a high-precision series voltage reference available in 5 difference output voltage options,

including the 1.024-V option below the bandgap voltage. The series reference can operate with input voltage as

low as VREF + 400 mV over temperature, consuming 400 µA or less over temperature depending on voltage

option. While in shutdown, the device consumes 10 nA (typical).

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 ON/OFF Operation

The LM4140 is designed to quickly reduce both VREF and IQto zero when turned off. VREF is restored in less than

200 µs when turned on. During the turnoff, the charge across the output capacitor is discharged to ground

through internal circuitry.

The LM4140 is turned off by pulling the enable input low, and turned on by driving the input high. If this feature is

not to be used, the enable pin must be tied to the VIN to keep the reference on at all times (the enable pin must

not be left floating).

To ensure proper operation, the signal source used to drive the enable pin must be able to swing above and

below the specified high and low voltage thresholds which ensure an ON or OFF state (see Electrical

Characteristics).

The ON/OFF signal may come from either a totem-pole output, or an open-collector output with pullup resistor to

the LM4140 input voltage. This high-level voltage may exceed the LM4140 input voltage, but must remain within

the absolute maximum rating for the enable pin.

7.4 Device Functional Modes

Table 1 lists the operational modes of the LM4140.

Table 1. Operational Modes

ENABLE PIN LOGIC STATE DESCRIPTION

EN = VIN 1 Normal operation, device powered up

EN = Ground 0 Device in shutdown

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8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

8.1.1 Input Capacitors

Although not always required, TI recommends an input capacitor. A supply bypass capacitor on the input assures

that the reference is working from a source with low impedance, which improves stability. A bypass capacitor can

also improve transient response by providing a reservoir of stored energy that the reference can use in case

where the load current demand suddenly increases. The value used for CIN may be used without limit.

8.1.2 Output Capacitors

The LM4140 requires a 1-µF (nominally) output capacitor for loop stability (compensation) as well as transient

response. During the sudden changes in load current demand, the output capacitor must source or sink current

during the time it takes the control loop of the LM4140 to respond.

This capacitor must be selected to meet the requirements of minimum capacitance and equivalent series

resistance (ESR) range.

In general, the capacitor value must be at least 0.2 µF (over the actual ambient operating temperature), and the

ESR must be within the range indicated in Figure 22,Figure 23, and Figure 24.

Figure 22. 0.22-µF ESR Range Figure 23. 1-µF ESR Range

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Application Information (continued)

Figure 24. 10-µF ESR Range

8.1.3 Tantalum Capacitors

Surface-mountable solid tantalum capacitors offer a good combination of small physical size for the capacitance

value, and ESR in the range required by the LM4140. The results of testing the LM4140 stability with surface

mount solid tantalum capacitors show good stability with values in the range of 0.1 µF. However, optimum

performance is achieved with a 1-µF capacitor.

Table 2 shows tantalum capacitors that have been verified as suitable for use with the LM4140.

Table 2. 1-µF Surface-Mount Tantalum Capacitor

Selection Guide

MANUFACTURER PART NUMBER

Kemet T491A105M010AS

NEC NRU105N10

Siemens B45196-E3105-K

Nichicon F931C105MA

Sprague 293D105X0016A2T

Table 3. 2.2-µF Surface-Mount Tantalum Capacitor

Selection Guide

MANUFACTURER PART NUMBER

Kemet T491A225M010AS

NEC NRU225M06

Siemens B45196/2.2/10/10

Nichicon F930J225MA

Sprague 293D225X0010A2T

8.1.4 Aluminum Electrolytic Capacitors

Although probably not a good choice for a production design, because of relatively large physical size, an

aluminium electrolytic capacitor can be used in the design prototype for an LM4140 reference. A 1-µF capacitor

meeting the ESR conditions can be used. If the operating temperature drops below 0°C, the reference may not

remain stable, as the ESR of the aluminium electrolytic capacitor increases, and may exceed the limits indicated

in the figures.

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8.1.5 Multilayer Ceramic Capacitors

Surface-mountable multilayer ceramic capacitors may be an attractive choice because of their relatively small

physical size and excellent RF characteristics.

However, they sometimes have an ESR values lower than the minimum required by the LM4140, and relatively

large capacitance change with temperature. The manufacturer's datasheet for the capacitor must be consulted

before selecting a value. Test results of LM4140 stability using multilayer ceramic capacitors show that a

minimum of 0.2 µF is usually required.

Table 4 shows the multilayer ceramic capacitors that have been verified as suitable for use with the LM4140.

Table 4. Surface-Mount Ceramic Capacitors Selection

Guide

CAPACITOR (µF) MANUFACTURER PART NUMBER

2.2 Tokin 1E225ZY5U-C203

2.2 Murata GRM42-6Y5V225Z16

4.7 Tokin 1E475ZY5U-C304

8.1.6 Reverse Current Path

The P-channel Pass transistor used in the LM4140 has an inherent diode connected between the VIN and VREF

pins (see Figure 25).

Figure 25. Internal P-Channel Pass Transistor

Forcing the output to voltages higher than the input, or pulling VIN below voltage stored on the output capacitor

by more than a Vbe, forward biases this diode and current flows from the VREF terminal to VIN. No damage to the

LM4140 occurs under these conditions as long as the current flowing into the output pin does not exceed 50 mA.

8.1.7 Output Accuracy

Like all references, either series or shunt, the after assembly accuracy is made up of primarily three components:

initial accuracy itself, thermal hysteresis, and effects of the PCB assembly stress.

LM4140 provides an excellent output initial accuracy of 0.1% and temperature coefficient of 6ppm/°C (B Grade).

For best accuracy and precision, the LM4140 junction temperature must not exceed 70°C.

The thermal hysteresis curve on this datasheet are performance characteristics of three typical parts selected at

random from a sample of 40 parts.

Parts are mounted in a socket to minimize the effect of PCB's mechnical expansion and contraction. Readings

are taken at 25°C following multiple temperature cycles to 0°C and 70°C. The labels on the X axis of Figure 26

indicate the device temperature cycle prior to measurement at 25°C.

4.1 k

50 k10T

100 k

4.7 F

1 mA

VIN VIN VREF

LM4140

-4.096

GND

DAC

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Figure 26. Typical Thermal Hysteresis

The mechanical stress due to the PCB's mechanical and thermal stress can cause an output voltage shift more

than the true thermal coefficient of the device. References in surface mount packages are more susceptible to

these stresses because of the small amount of plastic molding which support the leads.

Following the recommendations on Layout can minimize the mechanical stress on the device.

8.2 Typical Applications

8.2.1 Precision DAC Reference

Figure 27. Precision DAC Reference Schematic

8.2.1.1 Design Requirements

Generate a precision, temperature-stable voltage reference for use in digital-to-analog converter applications.

8.2.1.2 Detailed Design Procedure

Use LM4140-4.096 to generate a 4.096-V reference voltage. Use an adjustable resistor network to fine tune the

reference.

10 F

VOUT= 2.5 V

at 50 mA

100 k

VIN

0V On

Off

10 F

VIN

= 5.0 V 500 2N2907

LM4140

± 2.5

GND

VIN

VREF

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Typical Applications (continued)

8.2.1.3 Application Curves

Figure 28. Output Voltage vs Load Current Figure 29. Typical Temperature Coefficient

(Sample of 5 Parts)

8.2.2 Boosted Output Current

Figure 30. Boosted Output Current Schematic

8.2.2.1 Design Requirements

Generate a reference voltage that can support 50 mA.

8.2.2.2 Detailed Design Procedure

The LM4140-2.5 sets the reference level at 2.5 V. A 2N2907 PNP transistor is added, where the base is tied to

VIN through a 500-Ωresistor. The input current into the LM4140 increases with load current, which increases the

voltage drop across the 500-Ωresistor until the PNP transistor turns on and supplements the load current. See

Figure 30 for the circuit diagram.

VIN VREF

LM4140

GND

VREF

1F

±VREF

R/2

VIN

0V On

Off LM4140

± 2.5

GND

10 F

VOUT= 2.5 V

at 50 mA

INOUT

2 X 2N2907

VIN

= 4.5 V

to 5.5 V +

10 F

1 k

12 k

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Typical Applications (continued)

8.2.3 Boosted Output Current With Current Limiter

Figure 31. Boosted Output Current With Current Limiter Schematic

8.2.3.1 Design Requirements

Generate a reference voltage that can support 50 mA with current limiter.

8.2.3.2 Detailed Design Procedure

The LM4140-2.5 sets the reference level at 2.5 V. Similar to Boosted Output Current, a PNP transistor is added

between VIN and the output. Another PNP transistor is added to sense the current between VIN and the load.

This additional transistor turns on above 50 mA, which turns off the pass transistor to the load.

8.2.4 Complimentary Outputs

* Low Noise Op Amp such as OP-27

Figure 32. Complimentary Outputs Schematic

8.2.4.1 Design Requirements

Generate a positive and negative voltage reference.

8.2.4.2 Detailed Design Procedure

Use the LM4140 to generate the positive reference. Pass the reference into a unity gain inverting amplifier for a

negative reference output.

1k

RSET

2.45 k

1 F

1k

IREF

GND

IN OUT

LM4140

VIN

IN OUT L REF

REF

OUT REF

1 SET

V I R V

I ( ) I

(R R )

R1 2.45 k for

I 1mA using LM4120 2.5

! u 





1 F100 k

GND

LM4140

VIN VREF VREF

Force

VREF

Sense

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Typical Applications (continued)

8.2.5 Voltage Reference With Force and Sense Output

Figure 33. Voltage Reference With Force and Sense Output Schematic

8.2.5.1 Design Requirements

Design a voltage reference source that has a force and sense output.

8.2.5.2 Detailed Design Procedure

Use the LM4140 to generate a reference voltage. Pass this into the positive input terminal of an operation

amplifier, and use the negative input as the sense input from the load.

8.2.6 Precision Programmable Current Source

Figure 34. Precision Programmable Current Source Schematic

8.2.6.1 Design Requirements

Create a precision, adjustable current source.

8.2.6.2 Detailed Design Procedure

Use LM4140 to create reference voltage across an adjustable resistor, R1 + RSET. The voltage reference

creates a constant voltage source, and the adjustable resistor generates a proportional current.

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Typical Applications (continued)

8.2.7 Strain Gauge Conditioner for 350-ΩBridge

Figure 35. Strain Gauge Conditioner for 350-ΩBridge Schematic

8.2.7.1 Design Requirements

Supply a strain gage with a precision reference voltage.

8.2.7.2 Detailed Design Procedure

Use LM4140 to generate 4.096-V reference voltage. Use the reference to drive the strain gage bridge.

8.2.8 Bipolar Voltage References for Low Power ADC

Figure 36. Bipolar Voltage References for Low Power ADC Schematic

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Typical Applications (continued)

8.2.8.1 Design Requirements

Provide positive and negative reference voltages for the ADC1175 low power ADC.

8.2.8.2 Detailed Design Procedure

Use LM4140 to generate a 2.5-V positive reference voltage. The reference voltage is passed into an opamp to

act as a buffer and inverter, which yields a positive and negative reference. Transistors are used to drive the low

impedance inputs of the ADC1175.

8.2.9 Self-Biased Low Power ADC Reference With Trim Current Sources

Figure 37. Self-Biased Low Power ADC Reference With Trim Current Sources Schematic

8.2.9.1 Design Requirements

Use ADC1175 internal reference, but increase accuracy with trimming currents.

8.2.9.2 Detailed Design Procedure

The LM4140-2.5 sets a stable voltage source which is buffered and inverted, and the opamps are used as force

and sense amplifiers. This application does not require the transistor to drive low impedance nodes as the

internal reference voltages are still being used. The external circuitry is to increase the accuracy of the internal

reference.

VIN

1, 4 7 ,8

1 F

TOUT

VOUT

LM4140

SNVS053F –JUNE 2000–REVISED SEPTEMBER 2016

www.ti.com

Product Folder Links: LM4140

9 Power Supply Recommendations

While an input capacitor is not required, TI recommends using a 0.1 µF or larger capacitor to reduce noise on the

input and improve transient response.

10 Layout

10.1 Layout Guidelines

The simplest ways to reduce the stress related shifts are:

1. Mounting the device near the edges or the corners of the board where mechanical stress is at its minimum.

The center of the board generally has the highest mechanical and thermal expansion stress.

2. Mechanical isolation of the device by creating an island by cutting a U shape slot on the PCB for mounting

the device. This approach would also provide some thermal isolation from the rest of the circuit.

Figure 39 is a recommended printed-circuit board layout with a slot cut on three sides of the circuit layout to

serve as a strain relief.

10.2 Layout Example

Figure 38. Suggested Schematic and External Components

Figure 39. Suggested PCB Layout With Slot

LM4140

www.ti.com

SNVS053F –JUNE 2000–REVISED SEPTEMBER 2016

Product Folder Links: LM4140

11 Device and Documentation Support

11.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 27-Oct-2016

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM4140ACM-1.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM1.0

LM4140ACM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM1.2

LM4140ACM-2.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM2.0

LM4140ACM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM2.5

LM4140ACM-4.1/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM4.1

LM4140ACMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM2.5

LM4140ACMX-4.1/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140A

CM4.1

LM4140BCM-1.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM1.0

LM4140BCM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM1.2

LM4140BCM-2.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM2.0

LM4140BCM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM2.5

LM4140BCM-4.1/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM4.1

LM4140BCMX-1.0/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM1.0

LM4140BCMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM2.5

LM4140BCMX-4.1/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140B

CM4.1

LM4140CCM-1.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM1.0

LM4140CCM-1.2/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM1.2

PACKAGE OPTION ADDENDUM

www.ti.com 27-Oct-2016

Addendum-Page 2

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM4140CCM-2.0/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM2.0

LM4140CCM-2.5/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM2.5

LM4140CCM-4.1/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM4.1

LM4140CCMX-1.0/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM1.0

LM4140CCMX-1.2/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM1.2

LM4140CCMX-2.5/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM2.5

LM4140CCMX-4.1/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 4140C

CM4.1

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 27-Oct-2016

Addendum-Page 3

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM4140ACMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140ACMX-4.1/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140BCMX-1.0/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140BCMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140BCMX-4.1/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140CCMX-1.0/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140CCMX-1.2/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140CCMX-2.5/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LM4140CCMX-4.1/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Feb-2016

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM4140ACMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140ACMX-4.1/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140BCMX-1.0/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140BCMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140BCMX-4.1/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140CCMX-1.0/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140CCMX-1.2/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140CCMX-2.5/NOPB SOIC D 8 2500 367.0 367.0 35.0

LM4140CCMX-4.1/NOPB SOIC D 8 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Feb-2016

Pack Materials-Page 2

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Click to View Pricing, Inventory, Delivery & Lifecycle Information:

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LM4140ACM-1.0 LM4140ACM-1.0/NOPB LM4140ACM-1.2 LM4140ACM-1.2/NOPB LM4140ACM-2.0

LM4140ACM-2.0/NOPB LM4140ACM-2.5 LM4140ACM-2.5/NOPB LM4140ACM-4.1 LM4140ACM-4.1/NOPB

LM4140ACMX-2.5 LM4140ACMX-2.5/NOPB LM4140ACMX-4.1 LM4140ACMX-4.1/NOPB LM4140BCM-1.0

LM4140BCM-1.0/NOPB LM4140BCM-1.2 LM4140BCM-1.2/NOPB LM4140BCM-2.0 LM4140BCM-2.0/NOPB

LM4140BCM-2.5 LM4140BCM-2.5/NOPB LM4140BCM-4.1 LM4140BCM-4.1/NOPB LM4140BCMX-1.0

LM4140BCMX-1.0/NOPB LM4140BCMX-2.5 LM4140BCMX-2.5/NOPB LM4140BCMX-4.1 LM4140BCMX-4.1/NOPB

LM4140CCM-1.0 LM4140CCM-1.0/NOPB LM4140CCM-1.2 LM4140CCM-1.2/NOPB LM4140CCM-2.0 LM4140CCM-

2.0/NOPB LM4140CCM-2.5 LM4140CCM-2.5/NOPB LM4140CCM-4.1 LM4140CCM-4.1/NOPB LM4140CCMX-1.0

LM4140CCMX-1.0/NOPB LM4140CCMX-1.2 LM4140CCMX-1.2/NOPB LM4140CCMX-2.5 LM4140CCMX-2.5/NOPB

LM4140CCMX-4.1 LM4140CCMX-4.1/NOPB