1
Features
•Single 2.7V - 3.6V Supply
•Dual-interface Architecture
– Dedicated Serial Interface (SPI Modes 0 and 3 Compatible)
– Dedicated Parallel I/O Interface (Optional Use)
•Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 8192 Pages (1056 Bytes/Page) Main Memory
•Supports Page and Block Erase Operations
•Two 1056-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
•Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
•Low-power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
•20 MHz Maximum Clock Frequency – Serial Interface
•5 MHz Maximum Clock Frequency – Parallel Interface
•Fast Page Program Time – 1.5 ms Typical
•Hardware Data Protection Feature
•Commercial and Industrial Temperature Ranges
Description
The AT45DB642 is a 2.7-volt only, dual-interface Flash memory ideally suited for
a wide variety of digital voice-, image-, program code- and data-storage applications.
The dual-interface of the AT45DB642 allows a dedicated serial interface to be
64-megabit
2.7-volt Only
Dual-interface
DataFlash®
AT45DB642
Rev. 1638D–11/01
Pin Configurations
Pin Name Function
CS Chip Select
SCK/CLK Serial Clock/Clock
SI Serial Input
SO Serial Output
I/O7 - I/O0 Parallel Input/Output
WP Hardware Page Write Protect Pin
RESET Chip Reset
RDY/BUSY Ready/Busy
SER/PAR Serial/Parallel Interface Control
DataFlash Card(1)
Note: 1. See AT45DCB008 Datasheet.
7654321
TSOP Top View
Type 1
Note: *Optional Use – See pin description
text for connection information.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
NC
NC
RDY/BUSY
RESET
WP
NC
NC
NC
VCC
GND
NC
NC
NC
NC
CS
SCK/CLK
SI*
SO*
NC
NC
NC
NC
NC
NC
NC
I/O7*
I/O6*
I/O5*
I/O4*
VCCP*
GNDP*
I/O3*
I/O2*
I/O1*
I/O0*
SER/PAR*
NC
NC
NC
NC
2AT45DB642
1638D–11/01
connected to a DSP and a dedicated parallel interface to be connected to a microcontroller or
vice versa. However, the use of either interface is purely optional. Its 69,206,016 bits of mem-
ory are organized as 8192 pages of 1056 bytes each. In addition to the main memory, the
AT45DB642 also contains two SRAM data buffers of 1056 bytes each. The buffers allow
receiving of data while a page in the main memory is being reprogrammed, as well as reading
or writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily han-
dled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash
memories that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash® uses either a serial interface or a parallel interface to sequentially access its
data. The simple sequential access facilitates hardware layout, increases system reliability,
minimizes switching noise, and reduces package size and active pin count. DataFlash sup-
ports SPI mode 0 and mode 3. The device is optimized for use in many commercial and
industrial applications where high-density, low-pin count, low-voltage, and low-power are
essential. The device operates at clock frequencies up to 20 MHz with a typical active read
current consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB642 does not require high input
voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for
both the program and read operations. The AT45DB642 is enabled through the chip select pin
(CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output
(SO), and the Serial Clock (SCK), or a parallel interface consisting of the parallel input/output
pins (I/O7 - I/O0) and the clock pin (CLK). The SCK and CLK pins are shared and provide the
same clocking input to the DataFlash.
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array may
not be erased. In other words, the contents of the last page may not be filled with FFH.
Block Diagram
Memory Array To provide optimal flexibility, the memory array of the AT45DB642 is divided into three levels
of granularity comprising of sectors, blocks and pages. The “Memory Architecture Diagram”
illustrates the breakdown of each level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page-by-page basis; however, the optional
erase operations can be performed at the block or page level.
FLASH MEMORY ARRAY
PAGE (1056 BYTES)
BUFFER 2 (1056 BYTES)BUFFER 1 (1056 BYTES)
I/O INTERFACE
SCK/CLK
CS
RESET
VCC
GND
RDY/BUSY
SER/PAR
WP
SOSI I/O7 - I/O0
3
AT45DB642
1638D–11/01
Memory Architecture Diagram
Device
Operation
The device operation is controlled by instructions from the host processor. The list of instruc-
tions and their associated opcodes are contained in Tables 1 through 4. A valid instruction
starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired
buffer or main memory address location. While the CS pin is low, toggling the SCK/CLK pin
controls the loading of the opcode and the desired buffer or main memory address location
through either the SI (serial input) pin or the parallel input pins (I/O7 - I/O0). All instructions,
addresses, and data are transferred with the most significant bit (MSB) first.
Buffer addressing is referenced in the datasheet using the terminology BFA10 - BFA0 to
denote the 11 address bits required to designate a byte address within a buffer. Main memory
addressing is referenced using the terminology PA12 - PA0 and BA10 - BA0, where PA12 -
PA0 denotes the 13 address bits required to designate a page address and BA10 - BA0
denotes the 11 address bits required to designate a byte address within the page.
Read Commands By specifying the appropriate opcode, data can be read from the main memory or from either
one of the two SRAM data buffers. The DataFlash supports two categories of read modes in
relation to the SCK/CLK signal. The differences between the modes are in respect to the inac-
tive state of the SCK/CLK signal as well as which clock cycle data will begin to be output. The
two categories, which are comprised of four modes total, are defined as Inactive Clock Polarity
Low or Inactive Clock Polarity High and SPI Mode 0 or SPI Mode 3. A separate opcode (refer
to Table 1 for a complete list) is used to select which category will be used for reading. Please
refer to the “Detailed Bit-level Read Timing” diagrams in this datasheet for details on the clock
cycle sequences for each mode.
CONTINUOUS ARRAY READ: By supplying an initial starting address for the main memory
array, the Continuous Array Read command can be utilized to sequentially read a continuous
stream of data from the device by simply providing a clock signal; no additional addressing
information or control signals need to be provided. The DataFlash incorporates an internal
address counter that will automatically increment on every clock cycle, allowing one continu-
ous read operation without the need of additional address sequences. To perform a
SECTOR 0 = 8 Pages
8448 bytes (8K + 256)
SECTOR 1 = 248 Pages
261,888 bytes (248K + 7936)
Block = 8448 bytes
(8K + 256)
8 Pages
SECTOR 0
SECTOR 1
Page = 1056 bytes
(1K + 32)
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
PAGE 8190
PAGE 8191
BLOCK 0
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 8189
BLOCK 1
SECTOR ARCHITECTURE BLOCK ARCHITECTURE PAGE ARCHITECTURE
BLOCK 0
BLOCK 1
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 1022
BLOCK 1023
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
SECTOR 2
SECTOR 32 = 256 Pages
270,336 bytes (256K + 8K)
BLOCK 2
SECTOR 2 = 256 Pages
270,336 bytes (256K + 8K)
SECTOR 31 = 256 Pages
270,336 bytes (256K + 8K)
SECTOR 3 = 256 Pages
270,336 bytes (256K + 8K)
4AT45DB642
1638D–11/01
continuous read, an opcode of 68H or E8H must be clocked into the device followed by three
address bytes (which comprise the 24-bit page and byte address sequence) and a series of
don’t care bytes (four don’t care bytes if using the serial interface or 60 don’t care bytes if
using the parallel interface). The first 13 bits (PA12 - PA0) of the 24-bit (three byte) address
sequence specify which page of the main memory array to read, and the last 11 bits (BA10 -
BA0) of the 24-bit address sequence specify the starting byte address within the page. The
four or 60 don’t care bytes that follow the three address bytes are needed to initialize the read
operation. Following the don’t care bytes, additional clock pulses on the SCK/CLK pin will
result in data being output on either the SO (serial output) pin or the parallel output pins (I/O7-
I/O0).
The CS pin must remain low during the loading of the opcode, the address bytes, the don’t
care bytes, and the reading of data. When the end of a page in main memory is reached dur-
ing a Continuous Array Read, the device will continue reading at the beginning of the next
page with no delays incurred during the page boundary crossover (the crossover from the end
of one page to the beginning of the next page). When the last bit (or byte if using the parallel
interface mode) in the main memory array has been read, the device will continue reading
back at the beginning of the first page of memory. As with crossing over page boundaries, no
delays will be incurred when wrapping around from the end of the array to the beginning of the
array.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pins (SO or I/O7-I/O0). The maximum SCK/CLK frequency allowable for the Continuous Array
Read is defined by the fCAR specification. The Continuous Array Read bypasses both data
buffers and leaves the contents of the buffers unchanged.
BURST ARRAY READ WITH SYNCHRONOUS DELAY: The Burst Array Read with Synchro-
nous Delay functions very similarly to the Continuous Array Read operation but allows much
higher read throughputs by utilizing faster clock frequencies. It incorporates a synchronous
delay (through the use of don't care clock cycles) when crossing over page boundaries. To
perform a Burst Array Read with Synchronous Delay, an opcode of 69H or E9H must be
clocked into the device followed by three address bytes (which comprise the 24-bit page and
byte address sequence) and a series of don't care bytes (four don't care bytes if using the
serial interface or 60 don't care bytes if using the parallel interface). The first 13 bits (PA12-
PA0) of the 24-bit (three byte) address sequence specify which page of the main memory
array to read, and the last 11 bits (BA10-BA0) of the 24-bit address sequence specify the start-
ing byte address within the page. The don't care bytes that follow the three address bytes are
needed to initialize the read operation. Following the don't care bytes, additional clock pulses
on the SCK/CLK pin will result in data being output on either the SO pin or the I/O7-I/O0 pins.
As with the Continuous Array Read, the CS pin must remain low during the loading of the
opcode, the address bytes, the don't care bytes, and the reading of data. During a Burst Array
Read with Synchronous Delay, when the end of a page in main memory is reached (the last bit
or the last byte of the page has been clocked out), the system must send an additional 32
don't care clock cycles before the first bit (or byte if using the parallel interface mode) of the
next page can be read out. These 32 don't care clock cycles are necessary to allow the device
enough time to cross over the burst read boundary (the crossover from the end of one page to
the beginning of the next page). By utilizing the 32 don't care clock cycles, the system does
not need to delay the SCK/CLK signal to the device which allows synchronous operation when
reading multiple pages of the memory array. Please see the detailed read timing waveforms
for illustrations (beginning on page 20) on which clock cycle data will actually begin to be
output.
When the last bit (or byte in the parallel interface mode) in the main memory array has been
read, the device will continue reading back at the beginning of the first page of memory. The
transition from the last bit (or byte when using the parallel interface) of the array back to the
beginning of the array is also considered a burst read boundary. Therefore, the system must
5
AT45DB642
1638D–11/01
send 32 don't care clock cycles before the first bit (or byte if using the parallel interface mode)
of the memory array can be read.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pins (SO or I/O7-I/O0). The maximum SCK/CLK frequency allowable for the Burst Array Read
with Synchronous Delay is defined by the fBARSD specification. The Burst Array Read with Syn-
chronous Delay bypasses both data buffers and leaves the contents of the buffers unchanged.
MAIN MEMORY PAGE READ: A main memory page read allows the user to read data directly
from any one of the 8192 pages in the main memory, bypassing both of the data buffers and
leaving the contents of the buffers unchanged. To start a page read, an opcode of 52H or D2H
must be clocked into the device followed by three address bytes (which comprise the 24-bit
page and byte address sequence) and a series of don’t care bytes (four don’t care bytes if
using the serial interface or 60 don’t care bytes if the using parallel interface). The first 13 bits
(PA12 - PA0) of the 24-bit (three-byte) address sequence specify the page in main memory to
be read, and the last 11 bits (BA10 - BA0) of the 24-bit address sequence specify the starting
byte address within that page. The four or 60 don’t care bytes that follow the three address
bytes are sent to initialize the read operation. Following the don’t care bytes, additional pulses
on SCK/CLK result in data being output on either the SO (serial output) pin or the parallel out-
put pins (I/O7 - I/O0). The CS pin must remain low during the loading of the opcode, the
address bytes, the don’t care bytes, and the reading of data. When the end of a page in main
memory is reached, the device will continue reading back at the beginning of the same page.
A low-to-high transition on the CS pin will terminate the read operation and tri-state the output
pins (SO or I/O7 - I/O0).
BUFFER READ: Data can be read from either one of the two buffers, using different opcodes
to specify which buffer to read from. An opcode of 54H or D4H is used to read data from buffer
1, and an opcode of 56H or D6H is used to read data from buffer 2. To perform a buffer read,
the opcode must be clocked into the device followed by three address bytes comprised of 13
don’t care bits and 11 buffer address bits (BFA10 - BFA0). Following the three address bytes,
an additional don’t care byte must be clocked in to initialize the read operation. Since the
buffer size is 1056 bytes, 11 buffer address bits are required to specify the first byte of data to
be read from the buffer. The CS pin must remain low during the loading of the opcode, the
address bytes, the don’t care bytes, and the reading of data. When the end of a buffer is
reached, the device will continue reading back at the beginning of the buffer. A low-to-high
transition on the CS pin will terminate the read operation and tri-state the output pins (SO or
I/O7 - I/O0).
STATUS REGISTER READ: The status register can be used to determine the device’s
ready/busy status, the result of a Main Memory Page to Buffer Compare operation, or the
device density. To read the status register, an opcode of 57H or D7H must be loaded into the
device. After the opcode is clocked in, the 1-byte status register will be clocked out on the out-
put pins (SO or I/O7 - I/O0), starting with the next clock cycle. When using the serial interface,
the data in the status register, starting with the MSB (bit 7), will be clocked out on the SO pin
during the next eight clock cycles.
The five most-significant bits of the status register will contain device information, while the
remaining three least-significant bits are reserved for future use and will have undefined val-
ues. After the one byte of the status register has been clocked out, the sequence will repeat
itself (as long as CS remains low and SCK/CLK is being toggled). The data in the status regis-
ter is constantly updated, so each repeating sequence will output new data.
Ready/busy status is indicated using bit 7 of the status register. If bit 7 is a 1, then the device
is not busy and is ready to accept the next command. If bit 7 is a 0, then the device is in a busy
state. The user can continuously poll bit 7 of the status register by stopping SCK/CLK at a low
level once bit 7 has been output on the SO or I/O7 pin. The status of bit 7 will continue to be
output on the SO or I/O7 pin, and once the device is no longer busy, the state of the SO or
6AT45DB642
1638D–11/01
I/O7 pin will change from 0 to 1. There are eight operations that can cause the device to be in
a busy state: Main Memory Page to Buffer Transfer, Main Memory Page to Buffer Compare,
Buffer to Main Memory Page Program with Built-in Erase, Buffer to Main Memory Page Pro-
gram without Built-in Erase, Page Erase, Block Erase, Main Memory Page Program, and Auto
Page Rewrite.
The result of the most recent Main Memory Page to Buffer Compare operation is indicated
using bit 6 of the status register. If bit 6 is a 0, then the data in the main memory page matches
the data in the buffer. If bit 6 is a 1, then at least one bit of the data in the main memory page
does not match the data in the buffer.
The device density is indicated using bits 5, 4, and 3 of the status register. For the
AT45DB642, the three bits are 1, 1, and 1. The decimal value of these three binary bits does
not equate to the device density; the three bits represent a combinational code relating to dif-
fering densities of DataFlash devices, allowing a total of eight different density configurations.
Program and
Erase Commands
BUFFER WRITE: Data can be clocked in from the input pins (SI or I/O7 - I/O0) into either
buffer 1 or buffer 2. To load data into either buffer, a 1-byte opcode, 84H for buffer 1 or 87H for
buffer 2, must be clocked into the device, followed by three address bytes comprised of 13
don’t care bits and 11 buffer address bits (BFA10 - BFA0). The 11 buffer address bits specify
the first byte in the buffer to be written. After the last address byte has been clocked into the
device, data can then be clocked in on subsequent clock cycles. If the end of the data buffer is
reached, the device will wrap around back to the beginning of the buffer. Data will continue to
be loaded into the buffer until a low-to-high transition is detected on the CS pin.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITH BUILT-IN ERASE: Data written into
either buffer 1 or buffer 2 can be programmed into the main memory. The programming time is
selectable by the system through the use of different opcodes between a normal mode and a
fast mode (the fast program option will consume more current). A 1-byte opcode, 83H for
buffer 1 or 86H for buffer 2 (93H for buffer 1 fast program or 96H for buffer 2 fast program),
must be clocked into the device followed by three address bytes consisting of 13 page
address bits (PA12 - PA0) that specify the page in the main memory to be written and 11 don’t
care bits. When a low-to-high transition occurs on the CS pin, the part will first erase the
selected page in main memory (the erased state is a logical 1) and then program the data
stored in the buffer into the specified page in main memory. Both the erase and the program-
ming of the page are internally self-timed and should take place in a maximum time of tEP for
normal programming or tFEP for fast programming. During this time, the status register and the
RDY/BUSY pin will indicate that the part is busy.
BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE: A previously-
erased page within main memory can be programmed with the contents of either buffer 1 or
buffer 2. The programming time is selectable by the system through the use of different
opcodes between a normal mode and a fast mode (the fast program option will consume more
current). A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2 (98H for buffer 1 fast program or
99H for buffer 2 fast program), must be clocked into the device followed by three address
bytes consisting of 13 page address bits (PA12 - PA0) that specify the page in the main mem-
ory to be written and 11 don’t care bits. When a low-to-high transition occurs on the CS pin,
the part will program the data stored in the buffer into the specified page in the main memory.
It is necessary that the page in main memory that is being programmed has been previously
erased using one of the optional erase commands (Page Erase or Block Erase). The
Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
RDY/BUSY COMP111XXX
7
AT45DB642
1638D–11/01
programming of the page is internally self-timed and should take place in a maximum time of
tP for normal programming or tFP for fast programming. During this time, the status register and
the RDY/BUSY pin will indicate that the part is busy.
Successive page programming operations, without doing a page erase, are not recom-
mended. In other words, changing bytes within a page from a “1” to a “0” during multiple page
programming operations without erasing that page is not recommended.
PAGE ERASE: The optional Page Erase command can be used to individually erase any
page in the main memory array allowing the Buffer to Main Memory Page Program without
Built-in Erase command to be utilized at a later time. To perform a page erase, an opcode of
81H must be loaded into the device, followed by three address bytes comprised of 13 page
address bits (PA12 - PA0) and 11 don’t care bits. The 13 page address bits are used to spec-
ify which page of the memory array is to be erased. When a low-to-high transition occurs on
the CS pin, the part will erase the selected page (the erased state is a logical 1). The erase
operation is internally self-timed and should take place in a maximum time of tPE. During this
time, the status register and the RDY/BUSY pin will indicate that the part is busy.
BLOCK ERASE: A block of eight pages can be erased at one time allowing the Buffer to Main
Memory Page Program without Built-in Erase command to be utilized to reduce programming
times when writing large amounts of data to the device. To perform a block erase, an opcode
of 50H must be loaded into the device, followed by three address bytes comprised of 10 page
address bits (PA12 -PA3) and 14 don’t care bits. The 10 page address bits are used to specify
which block of eight pages is to be erased. When a low-to-high transition occurs on the CS
pin, the part will erase the selected block of eight pages. The erase operation is internally self-
timed and should take place in a maximum time of tBE. During this time, the status register and
the RDY/BUSY pin will indicate that the part is busy.
MAIN MEMORY PAGE PROGRAM THROUGH BUFFER: This operation is a combination of
the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase operations.
Data is first clocked into buffer 1 or buffer 2 from the input pins (SI or I/O7 - I/O0) and then pro-
grammed into a specified page in the main memory. The programming time is selectable by
the system through the use of different opcodes between a normal mode and a fast mode (the
fast program option will consume more current). A 1-byte opcode, 82H for buffer 1 or 85H for
buffer 2 (92H for buffer 1 fast program or 95H for buffer 2 fast program), must first be clocked
into the device, followed by three address bytes. The address bytes are comprised of 13 page
Block Erase Addressing
PA12 PA11 PA10 PA9 PA8 PA7 PA6 PA5 PA4 PA3 PA2 PA1 PA0 Block
0 0 0 0000000XXX 0
0 0 0 0000001XXX 1
0 0 0 0000010XXX 2
0 0 0 0000011XXX 3
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
1 1 1 1111100XXX1020
1 1 1 1111101XXX1021
1 1 1 1111110XXX1022
1 1 1 1111111XXX1023
8AT45DB642
1638D–11/01
address bits (PA12 - PA0) that select the page in the main memory where data is to be written,
and 11 buffer address bits (BFA10 - BFA0) that select the first byte in the buffer to be written.
After all address bytes are clocked in, the part will take data from the input pins and store it in
the specified data buffer. If the end of the buffer is reached, the device will wrap around back
to the beginning of the buffer. When there is a low-to-high transition on the CS pin, the part will
first erase the selected page in main memory to all 1s and then program the data stored in the
buffer into that memory page. Both the erase and the programming of the page are internally
self-timed and should take place in a maximum time of tEP for normal programming or tFEP for
fast programming. During this time, the status register and the RDY/BUSY pin will indicate that
the part is busy.
Additional
Commands
MAIN MEMORY PAGE TO BUFFER TRANSFER: A page of data can be transferred from the
main memory to either buffer 1 or buffer 2. To start the operation, a 1-byte opcode, 53H for
buffer 1 and 55H for buffer 2, must be clocked into the device, followed by three address bytes
comprised of 13 page address bits (PA12 - PA0), which specify the page in main memory that
is to be transferred, and 11 don’t care bits. The CS pin must be low while toggling the
SCK/CLK pin to load the opcode and the address bytes from the input pins (SI or I/O7 - I/O0).
The transfer of the page of data from the main memory to the buffer will begin when the CS pin
transitions from a low to a high state. During the transfer of a page of data (tXFR), the status
register can be read or the RDY/BUSY can be monitored to determine whether the transfer
has been completed.
MAIN MEMORY PAGE TO BUFFER COMPARE: A page of data in main memory can be com-
pared to the data in buffer 1 or buffer 2. To initiate the operation, a 1-byte opcode, 60H for
buffer 1 and 61H for buffer 2, must be clocked into the device, followed by three address bytes
consisting of 13 page address bits (PA12 - PA0) that specify the page in the main memory that
is to be compared to the buffer, and 11 don’t care bits. The CS pin must be low while toggling
the SCK/CLK pin to load the opcode and the address bytes from the input pins (SI or I/O7 -
I/O0). On the low-to-high transition of the CS pin, the 1056 bytes in the selected main memory
page will be compared with the 1056 bytes in buffer 1 or buffer 2. During this time (tXFR), the
status register and the RDY/BUSY pin will indicate that the part is busy. On completion of the
compare operation, bit 6 of the status register is updated with the result of the compare.
AUTO PAGE REWRITE: This mode is only needed if multiple bytes within a page or multiple
pages of data are modified in a random fashion. This mode is a combination of two operations:
Main Memory Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in
Erase. A page of data is first transferred from the main memory to buffer 1 or buffer 2, and
then the same data (from buffer 1 or buffer 2) is programmed back into its original page of
main memory. To start the rewrite operation, a 1-byte opcode, 58H for buffer 1 or 59H for
buffer 2, must be clocked into the device, followed by three address bytes comprised of 13
page address bits (PA12 - PA0) that specify the page in main memory to be rewritten and 11
don’t care bits. When a low-to-high transition occurs on the CS pin, the part will first transfer
data from the page in main memory to a buffer and then program the data from the buffer back
into same page of main memory. The operation is internally self-timed and should take place
in a maximum time of tEP. During this time, the status register and the RDY/BUSY pin will indi-
cate that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page, then the programming
algorithm shown in Figure 1 is recommended. Otherwise, if multiple bytes in a page or several
pages are programmed randomly in a sector, then the programming algorithm shown in Figure
2 is recommended.
9
AT45DB642
1638D–11/01
Operation Mode
Summary
The modes described can be separated into two groups – modes that make use of the Flash
memory array (Group A) and modes that do not make use of the Flash memory array
(Group B).
Group A modes consist of:
1. Main Memory Page to Buffer 1 (or 2) Transfer
2. Main Memory Page to Buffer 1 (or 2) Compare
3. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
4. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
5. Page Erase
6. Block Erase
7. Main Memory Page Program through Buffer
8. Auto Page Rewrite
9. Group B modes consist of:
10. Buffer 1 (or 2) Read
11. Buffer 1 (or 2) Write
12. Status Register Read
If a Group A mode is in progress (not fully completed), then another mode in Group A should
not be started. However, during this time in which a Group A mode is in progress, modes in
Group B can be started.
This gives the DataFlash the ability to virtually accommodate a continuous data stream. While
data is being programmed into main memory from buffer 1, data can be loaded into buffer 2
(or vice versa). See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
Pin Descriptions SERIAL/PARALLEL INTERFACE CONTROL (SER/PAR): The DataFlash may be configured
to utilize either its serial port or parallel port through the use of the serial/parallel control pin
(SER/PAR). The Dual Interface offers more flexibility in a system design with both the serial
and parallel modes offered on the same device. When the SER/PAR pin is held high, the serial
port (SI and SO) of the DataFlash will be used for all data transfers, and the parallel port
(I/O7 - I/O0) will be in a high impedance state. Any data presented on the parallel port while
SER/PAR is held high will be ignored. When the SER/PAR is held low, the parallel port will be
used for all data transfers, and the SO pin of the serial port will be in a high impedance state.
While SER/PAR is low, any data presented on the SI pin will be ignored. Switching between
the serial port and parallel port can be done at anytime provided the following conditions are
met: 1) CS should be held high during the switching between the two modes. 2) TSPH
(SER/PAR hold time) and TSPS (SER/PAR Setup time) requirements should be followed.
Having both a serial port and a parallel port on the DataFlash allows the device to reside on
two buses that can be connected to different processors. The advantage of switching between
the serial and parallel port is that while an internally self-timed operation such as an erase or
program operation is started with either port, a simultaneous operation such as a buffer read
or buffer write can be started utilizing the other port.
The SER/PAR pin is internally pulled high; therefore, if the parallel port is never to be used,
then connection of the SER/PAR pin is not necessary. In addition, if the SER/PAR pin is not
connected or if the SER/PAR pin is always driven high externally, then the parallel input/output
pins (I/O7-I/O0), the VCCP pin, and the GNDP pin should be treated as “don’t connects.”
SERIAL INPUT (SI): The SI pin is an input-only pin and is used to shift data serially into the
device. The SI pin is used for all data input, including opcodes and address sequences. If the
SER/PAR pin is always driven low, then the SI pin should be a “don’t connect”.
10 AT45DB642
1638D–11/01
SERIAL OUTPUT (SO): The SO pin is an output-only pin and is used to shift data serially out
from the device. If the SER/PAR pin is always driven low, then the SO pin should be a “don’t
connect”.
PARALLEL INPUT/OUTPUT (I/O7-I/O0): The I/O7-I/O0 pins are bidirectional and used to
clock data into and out of the device. The I/O7-I/O0 pins are used for all data input, including
opcodes and address sequences. The use of these pins is optional, and the pins should be
treated as “don’t connects” if the SER/PAR pin is not connected or if the SER/PAR pin is
always driven high externally.
SERIAL CLOCK/CLOCK (SCK/CLK): The SCK/CLK pin is an input-only pin and is used to
control the flow of data to and from the DataFlash. Data is always clocked into the device on
the rising edge of SCK/CLK and clocked out of the device on the falling edge of SCK/CLK.
CHIP SELECT (CS): The DataFlash is selected when the CS pin is low. When the device is
not selected, data will not be accepted on the input pins (SI or I/O7-I/O0), and the output pins
(SO or I/O7-I/O0) will remain in a high impedance state. A high-to-low transition on the CS pin
is required to start an operation, and a low-to-high transition on the CS pin is required to end
an operation.
HARDWARE PAGE WRITE PROTECT: If the WP pin is held low, the first 256 pages (sectors
0 and 1) of the main memory cannot be reprogrammed. The only way to reprogram the first
256 pages is to first drive the protect pin high and then use the program commands previously
mentioned. The WP pin is internally pulled high; therefore, in low pin count applications, con-
nection of the WP pin is not necessary if this pin and feature will not be utilized. However, it is
recommended that the WP pin be driven high externally whenever possible.
RESET: A low state on the reset pin (RESET) will terminate the operation in progress and
reset the internal state machine to an idle state. The device will remain in the reset condition
as long as a low level is present on the RESET pin. Normal operation can resume once the
RESET pin is brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. The RESET pin is also internally pulled high; there-
fore, in low pin count applications, connection of the RESET pin is not necessary if this pin and
feature will not be utilized. However, it is recommended that the RESET pin be driven high
externally whenever possible.
READY/BUSY: This open drain output pin will be driven low when the device is busy in an
internally self-timed operation. This pin, which is normally in a high state (through an external
pull-up resistor), will be pulled low during programming/erase operations, compare operations,
and page-to-buffer transfers.
The busy status indicates that the Flash memory array and one of the buffers cannot be
accessed; read and write operations to the other buffer can still be performed.
PARALLEL PORT SUPPLY VOLTAGE (VCCP AND GNDP): The VCCP and GNDP pins are
used to supply power for the parallel input/output pins (I/O7-I/O0). The VCCP and GNDP pins
need to be used if the parallel port is to be utilized; however, these pins should be treated as
“don’t connects” if the SER/PAR pin is not connected or if the SER/PAR pin is always driven
high externally.
Power-on/Reset
State
When power is first applied to the device, or when recovering from a reset condition, the
device will default to SPI Mode 3 or Inactive Clock Polarity High. In addition, the output pins
(SO or I/O7 - I/O0) will be in a high impedance state, and a high-to-low transition on the CS pin
will be required to start a valid instruction. The SPI mode or the clock polarity mode will be
automatically selected on every falling edge of CS by sampling the inactive Clock State.
11
AT45DB642
1638D–11/01
Note: In Tables 2 and 3, an SCK/CLK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock Polar-
ity Low, Inactive Clock Polarity High, SPI Mode 0, or SPI Mode 3).
Table 1. Read Commands
Command SCK/CLK Mode Opcode
Continuous Array Read
Inactive Clock Polarity Low or High 68H
SPI Mode 0 or 3 E8H
Burst Array Read with Synchronous Delay
Inactive Clock Polarity Low or High 69H
SPI Mode 0 or 3 E9H
Main Memory Page Read
Inactive Clock Polarity Low or High 52H
SPI Mode 0 or 3 D2H
Buffer 1 Read
Inactive Clock Polarity Low or High 54H
SPI Mode 0 or 3 D4H
Buffer 2 Read
Inactive Clock Polarity Low or High 56H
SPI Mode 0 or 3 D6H
Status Register Read
Inactive Clock Polarity Low or High 57H
SPI Mode 0 or 3 D7H
Table 2. Program and Erase Commands
Command SCK/CLK Mode Opcode
Buffer 1 Write Any 84H
Buffer 2 Write Any 87H
Buffer 1 to Main Memory Page Program with Built-in Erase Any 83H
Buffer 1 to Main Memory Page Program with Built-in Erase, Fast Program Any 93H
Buffer 2 to Main Memory Page Program with Built-in Erase Any 86H
Buffer 2 to Main Memory Page Program with Built-in Erase, Fast Program Any 96H
Buffer 1 to Main Memory Page Program without Built-in Erase Any 88H
Buffer 1 to Main Memory Page Program without Built-in Erase, Fast Program Any 98H
Buffer 2 to Main Memory Page Program without Built-in Erase Any 89H
Buffer 2 to Main Memory Page Program without Built-in Erase, Fast Program Any 99H
Page Erase Any 81H
Block Erase Any 50H
Main Memory Page Program Through Buffer 1 Any 82H
Main Memory Page Program Through Buffer 1, Fast Program Any 92H
Main Memory Page Program Through Buffer 2 Any 85H
Main Memory Page Program Through Buffer 2, Fast Program Any 95H
Table 3. Additional Commands
Command SCK/CLK Mode Opcode
Main Memory Page to Buffer 1 Transfer Any 53H
Main Memory Page to Buffer 2 Transfer Any 55H
Main Memory Page to Buffer 1 Compare Any 60H
Main Memory Page to Buffer 2 Compare Any 61H
Auto Page Rewrite Through Buffer 1 Any 58H
Auto Page Rewrite Through Buffer 2 Any 59H
12 AT45DB642
1638D–11/01
Note: P = Page Address Bit
B = Byte/Buffer Address Bit
x = Don’t Care
* 4 Bytes for Serial Interface
60 Bytes for Parallel Interface
Table 4. Detailed Bit-level Addressing Sequence
Opcode Opcode
Address Byte Address Byte Address Byte
Additional
Don’t Care
Bytes
Required
50H 01010000PPPPPPPPPPxxxxxxxxxxxxxx N/A
52H 01010010PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
53H 01010011PPPPPPPPPPPPPxxxxxxxxxxx N/A
54H 01010100xxxxxxxxxxxxxBBBBBBBBBBB 1 Byte
55H 01010101PPPPPPPPPPPPPxxxxxxxxxxx N/A
56H 01010110xxxxxxxxxxxxxBBBBBBBBBBB 1 Byte
57H 01010111 N/A N/A N/A N/A
58H 01011000PPPPPPPPPPPPPxxxxxxxxxxx N/A
59H 01011001PPPPPPPPPPPPPxxxxxxxxxxx N/A
60H 01100000PPPPPPPPPPPPPxxxxxxxxxxx N/A
61H 01100001PPPPPPPPPPPPPxxxxxxxxxxx N/A
68H 01101000PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
69H 01101001PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
81H 10000001PPPPPPPPPPPPPxxxxxxxxxxx N/A
82H 10000010PPPPPPPPPPPPPBBBBBBBBBBB N/A
83H 10000011PPPPPPPPPPPPPxxxxxxxxxxx N/A
84H 10000100xxxxxxxxxxxxxBBBBBBBBBBB N/A
85H 10000101PPPPPPPPPPPPPBBBBBBBBBBB N/A
86H 10000110PPPPPPPPPPPPPxxxxxxxxxxx N/A
87H 10000111xxxxxxxxxxxxxBBBBBBBBBBB N/A
88H 10001000PPPPPPPPPPPPPxxxxxxxxxxx N/A
89H 10001001PPPPPPPPPPPPPxxxxxxxxxxx N/A
92H 10010010PPPPPPPPPPPPPBBBBBBBBBBB N/A
93H 10010011PPPPPPPPPPPPPxxxxxxxxxxx N/A
95H 10010101PPPPPPPPPPPPPBBBBBBBBBBB N/A
96H 10010110PPPPPPPPPPPPPxxxxxxxxxxx N/A
98H 10011000PPPPPPPPPPPPPxxxxxxxxxxx N/A
99H 10011001PPPPPPPPPPPPPxxxxxxxxxxx N/A
D2H 11010010PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
D4H 11010100xxxxxxxxxxxxxBBBBBBBBBBB 1 Byte
D6H 11010110xxxxxxxxxxxxxBBBBBBBBBBB 1 Byte
D7H 11010111 N/A N/A N/A N/A
E8H 11101000PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
E9H 11101001PPPPPPPPPPPPPBBBBBBBBBBB 4 or 60
Bytes*
PA
12
PA11
PA10
PA
9
PA
8
PA
7
PA
6
PA
5
PA
4
PA
3
PA
2
PA
1
PA0
BA10
BA
9
BA
8
BA
7
BA
6
BA
5
BA
4
BA
3
BA
2
BA
1
BA0
13
AT45DB642
1638D–11/01
Note: 1. After power is applied and VCC is at the minimum specified datasheet value, the system should wait 20 ms before an opera-
tional mode is started.
Notes: 1. ICC1 during a buffer read is 20 mA maximum.
2. ICC2 during a buffer read is 25 mA maximum.
Absolute Maximum Ratings*
Temperature under Bias .................................-55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature......................................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground................................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground............................. -0.6V to VCC + 0.6V
DC and AC Operating Range
AT45DB642
Operating Temperature (Case)
Com. 0°C to 70°C
Ind. -40°C to 85°C
VCC Power Supply(1) 2.7V to 3.6V
DC Characteristics
Symbol Parameter Condition Min Typ Max Units
ISB Standby Current CS, RESET, WP = VIH, all
inputs at CMOS levels 210µA
ICC1(1) Active Current, Read
Operation, Serial Interface
f = 20 MHz; IOUT = 0 mA;
VCC = 3.6V 410mA
ICC2(2) Active Current, Read
Operation, Parallel Interface
f = 5 MHz; IOUT = 0 mA;
VCC = 3.6V 815mA
ICC3
Active Current, Program
Operation, Page Program VCC = 3.6V 20 35 mA
ICC4
Active Current, Program
Operation, Fast Page Program VCC = 3.6V 30 50 mA
ICC5
Active Current, Erase
Operation, Page VCC = 3.6V 20 35 mA
ICC6
Active Current, Erase
Operation, Block VCC = 3.6V 20 35 mA
ILI Input Load Current VIN = CMOS levels 1 µA
ILO Output Leakage Current VI/O = CMOS levels 1 µA
VIL Input Low Voltage 0.6 V
VIH Input High Voltage 2.0 V
VOL Output Low Voltage IOL = 1.6 mA; VCC = 2.7V 0.4 V
VOH Output High Voltage IOH = -100 µA VCC - 0.2V V
14 AT45DB642
1638D–11/01
Note: 1. For applications requiring extended writes, standard programming times are recommended.
AC Characteristics – Serial/Parallel Interface
Symbol Parameter Min Max Units
tSPH SER/PAR Hold Time 100 ns
tSPS SER/PAR Setup Time 100 ns
AC Characteristics – Serial Interface
Symbol Parameter Min Max Units
fSCK SCK Frequency 20 MHz
fCAR SCK Frequency for Continuous Array Read 15 MHz
fBARSD SCK Frequency for Burst Array Read with Synchronous Delay 20 MHz
tWH SCK High Time 22 ns
tWL SCK Low Time 22 ns
tCS Minimum CS High Time 250 ns
tCSS CS Setup Time 250 ns
tCSH CS Hold Time 250 ns
tCSB CS High to RDY/BUSY Low 150 ns
tSU Data In Setup Time 5 ns
tHData In Hold Time 10 ns
tHO Output Hold Time 0 ns
tDIS Output Disable Time 18 ns
tVOutput Valid 20 ns
tXFR Page to Buffer Transfer/Compare Time 700 µs
tEP Page Erase and Programming Time 20 ms
tPPage Programming Time 14 ms
tFEP Fast Page Erase and Programming Time(1) 10 ms
tFP Fast Page Programming Time(1) 2ms
tPE Page Erase Time 8ms
tBE Block Erase Time 12 ms
tRST RESET Pulse Width 10 µs
tREC RESET Recovery Time 1 µs
15
AT45DB642
1638D–11/01
Test Waveforms and Measurement Levels
Output Test Load
AC Characteristics – Parallel Interface
Symbol Parameter Min Max Units
fSCK1 CLK Frequency 5MHz
fCAR1 CLK Frequency for Continuous Array Read 3 MHz
fBARSD1 CLK Frequency for Burst Array Read with Synchronous Delay 5 MHz
tWH CLK High Time 80 ns
tWL CLK Low Time 80 ns
tCS Minimum CS High Time 250 ns
tCSS CS Setup Time 250 ns
tCSH CS Hold Time 250 ns
tCSB CS High to RDY/BUSY Low 150 ns
tSU Data In Setup Time 75 ns
tHData In Hold Time 25 ns
tHO Output Hold Time 0 ns
tDIS Output Disable Time 55 ns
tVOutput Valid 70 ns
tXFR Page to Buffer Transfer/Compare Time 700 µs
tEP Page Erase and Programming Time 20 ms
tPPage Programming Time 14 ms
tFEP Fast Page Erase and Programming Time 10 ms
tFP Fast Page Programming Time 2 ms
tPE Page Erase Time 8ms
tBE Block Erase Time 12 ms
tRST RESET Pulse Width 10 µs
tREC RESET Recovery Time 1 µs
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.45V
2.0
0.8
2.4V
tR, tF < 3 ns (10% to 90%)
DEVICE
UNDER
TEST
30 pF
16 AT45DB642
1638D–11/01
AC Waveforms Two different timing diagrams are shown below. Waveform 1 shows the SCK/CLK signal
being low when CS makes a high-to-low transition, and Waveform 2 shows the SCK/CLK sig-
nal being high when CS makes a high-to-low transition. Both waveforms show valid timing
diagrams. The setup and hold times for the input signals (SI or I/O7-I/O0) are referenced to the
low-to-high transition on the SCK/CLK signal.
Waveform 1 shows timing that is also compatible with SPI Mode 0, and Waveform 2 shows
timing that is compatible with SPI Mode 3.
Waveform 1 – Inactive Clock Polarity Low and SPI Mode 0
Waveform 2 – Inactive Clock Polarity High and SPI Mode 3
CS
SCK/CLK
SI or I/O7 - I/O0
(INPUT)
SO or I/O7 - I/O0
(OUTPUT)
tCSS
VALID IN
tHtSU
tWH tWL tCSH
tCS
tV
HIGH IMPEDANCE VALID OUT
tHO tDIS
HIGH IMPEDANCE
CS
SCK/CLK
SO or I/O7 - I/O0
(OUTPUT)
tCSS
VALID IN
tHtSU
tWL tWH tCSH
tCS
tV
HIGH Z VALID OUT
tHO tDIS
HIGH IMPEDANCE
SI or I/O7 - I/O0
(INPUT)
17
AT45DB642
1638D–11/01
Reset Timing (Inactive Clock Polarity Low Shown)
Note: The CS signal should be in the high state before the RESET signal is deasserted.
Serial/Parallel Interface Timing
Command Sequence for Read/Write Operations (Except Status Register Read)
CS
SCK/CLK
RESET
SO or I/O7 - I/O0
(OUTPUT)
HIGH IMPEDANCE HIGH IMPEDANCE
SI or I/O7 - I/O0
(INPUT)
tRST
tREC tCSS
CS
SER/PAR
tSPH tSPS
SI or I/O7 - I/O0
(INPUT)
CMD 8 bits 8 bits 8 bits
MSB
Page Address
(PA12 - PA0)
Byte/Buffer Address
(BA10 - BA0/BFA10 - BFA0)
LSBX X X X X X X X X X X X X X X X
X X X X X X X X
18 AT45DB642
1638D–11/01
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
Main Memory Page Program through Buffers
Buffer Write
Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)
FLASH MEMORY ARRAY
PAGE (1056 BYTES)
BUFFER 2 (1056 BYTES)BUFFER 1 (1056 BYTES)
I/O INTERFACE
SI
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
MAIN MEMORY
PAGE PROGRAM
THROUGH BUFFER 2
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
MAIN MEMORY PAGE
PROGRAM THROUGH
BUFFER 1
BUFFER 1
WRITE
BUFFER 2
WRITE
I/O7 - I/O0
SI or I/O7 - I/O0
(INPUT)
CMD n n+1 Last Byte
· Completes writing into selected buffer
· Starts self-timed erase/program operation
CS
PA12-5 PA4-0, BFA10-8 BFA7-0
SI or I/O7 - I/O0
(INPUT)
CMD
X
X···X, BFA10-8
BFA7-0
nn+1 Last Byte
· Completes writing into selected buffer
CS
SI or I/O7 - I/O0
(INPUT)
CMD
PA12-5 PA4-0, XXX
CS
Starts self-timed erase/program operation
X···X
Each transition
represents 8 bits
n = 1st byte read
n+1 = 2nd byte read
19
AT45DB642
1638D–11/01
Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
Main Memory Page Read
Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Buffer Read
FLASH MEMORY ARRAY
PAGE (1056 BYTES)
BUFFER 2 (1056 BYTES)BUFFER 1 (1056 BYTES)
I/O INTERFACE
MAIN MEMORY
PAGE TO
BUFFER 1
MAIN MEMORY
PAGE TO
BUFFER 2
MAIN MEMORY
PAGE READ
BUFFER 1
READ
BUFFER 2
READ
SO I/O7 - I/O0
SI or I/O7 - I/O0
(INPUT)
CMD PA12-5 PA4-0, BA10-8 BA7-0 X
X
CS
nn+1
SO or I/O7 - I/O0
(OUTPUT)
SI or I/O7 - I/O0
(INPUT)
CMD PA12-5 PA4-0, XXX X
Starts reading page data into buffer
CS
SO or I/O7 - I/O0
(OUTPUT)
SI or I/O7 - I/O0
(INPUT)
CMD XBFA10-8 BFA7-0
CS
n n+1SO or I/O7 - I/O0
(OUTPUT)
X
Each transition
represents 8 bits
n = 1st byte read
n+1 = 2nd byte read
20 AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – Inactive Clock Polarity Low
Continuous Array Read (Opcode: 68H)
Burst Array Read with Synchronous Delay (Opcode: 69H)
SI 01XX
CS
SO
SCK 12 63 64 65 66 67 68
HIGH IMPEDANCE D7D6D5D2D1D0D7D6D5
DATA OUT
BIT 0
OF
PAGE n+1
BIT 8447
OF
PAGE n
LSB MSB
tSU
tV
SI
01XX
CS
SO
SCK
12 63 64 65 66 67
HIGH IMPEDANCE
D7D6D1D0D7D6
DATA OUT
BIT 8447
OF
PAGE n
LSB MSB
tSU
tV
32 CLOCKS
BIT 0
OF
PAGE n+1
1231 32 33
Don't Care
21
AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued)
Main Memory Page Read (Opcode: 52H)
Buffer Read (Opcode: 54H or 56H)
Status Register Read (Opcode: 57H)
SI
01010 XXX
CS
SO
SCK
12345 60 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
SI
01010 XXX
CS
SO
SCK
12345 36 37 38 39 40 41 42 43
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
SI 01010111
CS
SO
SCK 12345 7891011 12 16 17
HIGH IMPEDANCE D7D6D5
STATUS REGISTER OUTPUT
COMMAND OPCODE
MSB
tSU
tV
6
D1D0D7
LSB MSB
22 AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – Inactive Clock Polarity High
Continuous Array Read (Opcode: 68H)
Burst Array Read with Synchronous Delay (Opcode: 69H)
SI 01XXX
CS
SO
SCK 12 63 64 65 66 67
HIGH IMPEDANCE D7D6D5D2D1D0D7D6D5
BIT 0
OF
PAGE n+1
BIT 8447
OF
PAGE n
LSB MSB
tSU
tV DATA OUT
SI
01XXX
CS
SO
SCK
HIGH IMPEDANCE
D7D6
DATA OUT
tSU
tV
12 63 64 65 66 1231 32 33
32 CLOCKS
D1D0D7D6
BIT 8447
OF
PAGE n
LSB MSB
BIT 0
OF
PAGE n+1
Don't Care
23
AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued)
Main Memory Page Read (Opcode: 52H)
Buffer Read (Opcode: 54H or 56H)
Status Register Read (Opcode: 57H)
SI 01010 XXX
CS
SO
SCK 12345 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D4
68
SI
01010 XXX
CS
SO
SCK
12345 37 38 39 40 41 42 43
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D4
44
SI 01010111
CS
SO
SCK 12345 7891011 12 17 18
HIGH IMPEDANCE D7D6D5
STATUS REGISTER OUTPUT
COMMAND OPCODE
MSB
tSU
tV
6
D4D0D7
LSB MSB
D6
24 AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – SPI Mode 0
Continuous Array Read (Opcode: E8H)
Burst Array Read with Synchronous Delay (Opcode: E9H)
SI 11XXX
CS
SO
SCK 12 62 63 64 65 66 67
HIGH IMPEDANCE D7D6D5D2D1D0D7D6D5
DATA OUT
BIT 0
OF
PAGE n+1
BIT 8447
OF
PAGE n
LSB MSB
tSU
tV
SI 01XXX
CS
SO
SCK 12 62 63 64 65 66
HIGH IMPEDANCE D7D6
DATA OUT
tSU
tV
1231
32 33
32 CLOCKS
D1D0D7D6
BIT 8447
OF
PAGE n
LSB MSB
BIT 0
OF
PAGE n+1
Don't Care
25
AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – SPI Mode 0 (Continued)
Main Memory Page Read (Opcode: D2H)
Buffer Read (Opcode: D4H or D6H)
Status Register Read (Opcode: D7H)
SI
11010 XXX
CS
SO
SCK
12345 60 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D4
SI
11010 XXX
CS
SO
SCK
12345 36 37 38 39 40 41 42 43
XX
HIGH IMPEDANCE
COMMAND OPCODE
tSU
D7D6D5
DATA OUT
MSB
tV
D4
SI
11010111
CS
SO
SCK
12345 7891011 12 16 17
HIGH IMPEDANCE STATUS REGISTER OUTPUT
COMMAND OPCODE
MSB
tSU
6
D1D0D7
LSB MSB
D7D6D5
tV
D4
26 AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – SPI Mode 3
Continuous Array Read (Opcode: E8H)
Burst Array Read with Synchronous Delay (Opcode: E9H)
SI 01XXX
CS
SO
SCK 12 63 64 65 66 67
HIGH IMPEDANCE D7D6D5D2D1D0D7D6D5
BIT 0
OF
PAGE n+1
BIT 8447
OF
PAGE n
LSB MSB
tSU
tV DATA OUT
SI 01XXX
CS
SO
SCK
HIGH IMPEDANCE D7D6
DATA OUT
tSU
tV
12 63 64 65 66 1231 32 33
32 CLOCKS
D1D0D7D6
BIT 8447
OF
PAGE n
LSB MSB
BIT 0
OF
PAGE n+1
Don't Care
27
AT45DB642
1638D–11/01
Detailed Bit-level Read Timing – SPI Mode 3 (Continued)
Main Memory Page Read (Opcode: D2H)
Buffer Read (Opcode: D4H or D6H)
Status Register Read (Opcode: D7H)
SI
01010 XXX
CS
SO
SCK
12345 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D4
68
SI
01010 XXX
CS
SO
SCK
12345 37 38 39 40 41 42 43
XX
HIGH IMPEDANCE
D7D6D5
DATA OUT
COMMAND OPCODE
MSB
tSU
tV
D4
44
SI
01010111
CS
SO
SCK
12345 7891011 12 17 18
HIGH IMPEDANCE
D7D6D5
STATUS REGISTER OUTPUT
COMMAND OPCODE
MSB
tSU
tV
6
D4D0D7
LSB MSB
D6
28 AT45DB642
1638D–11/01
Detailed Parallel Read Timing – SPI Mode 0
Continuous Array Read (Opcode: E8H)
Burst Array Read with Synchronous Delay (Opcode: E9H)
I/O7-I/O0
(INPUT) CMD ADDR XXX
CS
I/O7-I/O0
(OUTPUT)
CLK 12 62 63 64 65 66 67
HIGH IMPEDANCE DATA DATA DATA DATA DATA DATA DATA DATA DATA
DATA OUT
BYTE 0
OF
PAGE n+1
BYTE 1055
OF
PAGE n
tSU
tV
I/O7-I/O0
(INPUT) CMD ADDR X X X
CS
I/O7-I/O0
(
OUTPUT)
CLK 12 62 63 64 65 66
HIGH IMPEDANCE DATA DATA DATA DATA DATA DATA
DATA OUT
BYTE 1055
OF
PAGE n
tSU
tV
BYTE 0
OF
PAGE n+1
1231
32 33
32 CLOCKS
Don't Care
29
AT45DB642
1638D–11/01
Detailed Parallel Timing – SPI Mode 0 (Continued)
Main Memory Page Read (Opcode: D2H)
Buffer Read (Opcode: D4H or D6H)
Status Register Read (Opcode: D7H)
I/O7-I/O0
(INPUT)
CMD ADDR ADDR ADDR
XXXX
CS
I/O7-I/O0
(OUTPUT)
CLK 12345 60 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE DATA DATA DATA
DATA OUT
COMMAND OPCODE
tSU
tV
DATA
I/O7-I/O0
(INPUT)
CMD ADDR ADDR ADDR
X
CS
I/O7-I/O0
(OUTPUT)
CLK
12345 7
HIGH IMPEDANCE
COMMAND OPCODE
tSU
DATA OUT
DATA DATA DATA
MSB
tV
6
I/O7-I/O0
(INPUT)
CMD
CS
I/O7-I/O0
(OUTPUT)
CLK 1234
HIGH IMPEDANCE
tSU
DATA DATA DATA
tV
STATUS
REGISTER OUTPUT
30 AT45DB642
1638D–11/01
Detailed Parallel Read Timing – SPI Mode 3
Continuous Array Read (Opcode: E8H)
Burst Array Read with Synchronous Delay (Opcode: E9H)
I/O7-I/O0
(INPUT)
CMD ADDR XXX
CS
I/O7-I/O0
(OUTPUT)
CLK
12 63 64 65 66 67
HIGH IMPEDANCE
DATA DATA DATA DATA DATA DATA DATA DATA DATA
BYTE 0
OF
PAGE n+1
BYTE 1055
OF
PAGE n
tSU
tV DATA OUT
I/O7-I/O0
(INPUT)
CMD ADDR XXX
CS
I/O7-I/O0
(OUTPUT)
CLK
HIGH IMPEDANCE DATA DATA
DATA OUT
tSU
tV
12 63 64 65 66 1231 32 33
32 CLOCKS
DATA DATA DATA DATA
BYTE 1055
OF
PAGE n
BYTE 0
OF
PAGE n+1
DON'T CARE
31
AT45DB642
1638D–11/01
Detailed Parallel Read Timing – SPI Mode 3 (Continued)
Main Memory Page Read (Opcode: D2H)
Buffer Read (Opcode: D4H or D6H)
Status Register Read (Opcode: D7H)
I/07-I/O0
(INPUT)
CMD ADDR ADDR ADDR
XXXX
CS
I/07-I/O0
(OUTPUT)
CLK 12345 61 62 63 64 65 66 67
XX
HIGH IMPEDANCE DATA DATA DATA
DATA OUT
COMMAND OPCODE
tSU
tV
DATA
68
I/O7-I/O0
(INPUT) CMD ADDR ADDR ADDR X
CS
I/O7-I/O0
(OUTPUT)
CLK 12345678
HIGH IMPEDANCE DATA DATA DATA
DATA OUT
tSU
tV
DATA
9
I/O7-I/O0
(INPUT)
CMD
CS
I/O7-I/O0
(OUTPUT)
CLK
1234
HIGH
IMPEDANCE
HIGH
IMPEDANCE
DATA DATA DATA
STATUS REGISTER
OUTPUT
tSU
tV
32 AT45DB642
1638D–11/01
Figure 1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes: 1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
page.
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
to Main Memory Page Program operation.
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
within the entire array.
START
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
END
provide address
and data
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
33
AT45DB642
1638D–11/01
Figure 2. Algorithm for Randomly Modifying Data
Notes: 1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase/program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase/program operations have accumulated before rewriting all pages of the sector. See application note
AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
START
MAIN MEMORY PAGE
TO BUFFER TRANSFER
(53H, 55H)
INCREMENT PAGE
ADDRESS POINTER
(2)
AUTO PAGE REWRITE
(2)
(58H, 59H)
END
provide address of
page to modify
If planning to modify multiple
bytes currently stored within
a page of the Flash array
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
Sector Addressing
PA12 PA11 PA10 PA9 PA8 PA7 PA6 PA5 PA4 PA3 PA2 - PA0 Sect or
0 0 00000000 X 0
00000XXXXXX 1
00001XXXXXX 2
00010XXXXXX 3
••••••••••• •
••••••••••• •
••••••••••• •
11100XXXXXX 29
11101XXXXXX 30
11110XXXXXX 31
11111XXXXXX 32
34 AT45DB642
1638D–11/01
Ordering Information
Note: 1. Serial Interface
fSCK
(MHz)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
20(1) 10(1) 0.01 AT45DB642-TC 40T Commercial
(0°C to 70°C)
20(1) 10(1) 0.01 AT45DB642-TI 40T Industrial
(-40°C to 85°C)
Package Type
40T 40-lead, Plastic Thin Small Outline Package (TSOP)
35
AT45DB642
1638D–11/01
Packaging Information
40T – TSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
40T, 40-lead (10 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP) B
40T
10/18/01
PIN 1 0º ~ 8º
D1 D
Pin 1 Identifier
b
e
EA
A1
A2
c
L
GAGE PLANE
SEATING PLANE
L1
Notes: 1. This package conforms to JEDEC reference MO-142, Variation CD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A––1.20
A1 0.05 –0.15
A2 0.95 1.00 1.05
D 19.80 20.00 20.20
D1 18.30 18.40 18.50 Note 2
E 9.90 10.00 10.10 Note 2
L 0.50 0.60 0.70
L1 0.25 BASIC
b 0.17 0.22 0.27
c 0.10 – 0.21
e 0.50 BASIC
© Atmel Corporation 2001.
Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty
which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors
which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does
not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted
by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical
components in life support devices or systems.
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Other terms and product names may be the trademarks of others.
1638D–11/01/xM
