DATA SH EET
Product specification
Supersedes data of 1996 May 24 1999 Nov 15
DISCRETE SEMICONDUCTORS
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 15 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Shipped in 8 mm embossed tape
•Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYD77A −50 V
BYD77B −100 V
BYD77C −150 V
BYD77D −200 V
BYD77E −250 V
BYD77F −300 V
BYD77G −400 V
VRcontinuous reverse voltage
BYD77A −50 V
BYD77B −100 V
BYD77C −150 V
BYD77D −200 V
BYD77E −250 V
BYD77F −300 V
BYD77G −400 V
IF(AV) average forward current Ttp = 105 °C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D −2.00 A
BYD77E to G −1.85 A
IF(AV) average forward current Tamb =60°C; PCB mounting (see
Fig.16); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD77A to D −0.85 A
BYD77E to G −0.80 A
1999 Nov 15 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
IFRM repetitive peak forward current Ttp = 105 °C; see Figs 6 and 7
BYD77A to D −15 A
BYD77E to G −13 A
IFRM repetitive peak forward current Tamb =60°C; see Figs 8 and 9
BYD77A to D −8.5 A
BYD77E to G −8.0 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=T
j max
prior to surge; VR=V
RRMmax
−25 A
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=25°C prior to
surge; inductive load switched off −10 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j max;
see Figs 12 and 13
BYD77A to D −−0.75 V
BYD77E to G −−0.83 V
VFforward voltage IF=1A;
see Figs 12 and 13
BYD77A to D −−0.98 V
BYD77E to G −−1.05 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYD77A 55 −−V
BYD77B 110 −−V
BYD77C 165 −−V
BYD77D 220 −−V
BYD77E 275 −−V
BYD77F 330 −−V
BYD77G 440 −−V
I
Rreverse current VR=V
RRMmax;
see Fig.14 −− 1µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig.14 −−100 µA
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD77A to D −−25 ns
BYD77E to G −−50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Nov 15 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16.
For more information please refer to the
“General Part of associated Handbook”
.
Cddiode capacitance f = 1 MHz; VR=0V;
see Fig.15
BYD77A to D −50 −pF
BYD77E to G −40 −pF
maximum slope of reverse recovery
current when switched from
IF=1AtoV
R≥30 V and
dIF/dt = −1A/µs;
see Fig.17
BYD77A to D −− 4A/µs
BYD77E to G −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 30 K/W
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dIR
dt
--------
1999 Nov 15 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
GRAPHICAL DATA
BYD77A to D
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 100 200
4
3
1
0
2
MCD598
Ttp ( C)
o
IF(AV)
(A)
BYD77E to G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
3
2
1
0100 200
MCD596
o
tp
TC)(
I
F(AV)
(A)
BYD77A to D
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
Fig.4 Maximum permissible average forward
currentasafunctionofambienttemperature
(including losses due to reverse leakage).
handbook, halfpage
0
1.2
0.8
0.4
0100 200
MCD597
IF(AV)
(A)
T ( C)
o
amb
Fig.5 Maximum permissible average forward
currentas a functionof ambient temperature
(including losses due to reverse leakage).
BYD77E to G
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.16.
Switched mode application.
handbook, halfpage
0 100 200
1.0
0
MCD595
0.5
IF(AV)
(A)
T ( C)
o
amb
1999 Nov 15 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
handbook, full pagewidth
MCD593
10 -1 10010110210 3104
tp(ms)
10 -2
20
0
10
(A)
IFRM
0.5
1
δ =
0.05
0.1
0.2
BYD77A to D
Ttp = 105 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD591
10 -1 10010110210 3104
tp(ms)
10 -2
20
0
10
(A)
IFRM
0.5
1
0.2
0.1
δ =
0.05
BYD77E to G
Ttp = 105°C; Rth j-tp = 30 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
handbook, full pagewidth
MCD592
10 -1 10010110210 3104
tp(ms)
10 -2
10
0
5
(A)
IFRM
0.1
0.2
1
δ =
0.05
0.5
BYD77A to D
Tamb =60°C; Rth j-a = 150 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD590
10 -1 10010110210 3104
tp(ms)
10 -2
10
0
5
(A)
IFRM
0.1
0.2
1
δ =
0.05
0.5
BYD77E to G
Tamb =60°C; Rth j-a = 150 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
BYD77A to D
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.10 Maximumsteady statepower dissipation
(forward plus leakage current losses,
excludingswitching losses) as a function
of average forward current.
handbook, halfpage
02
2
0
MGC530
1
1
P
(W)
IF(AV) (A)
a=3 2 1.57 1.42
2.5
BYD77E to G
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.11 Maximumsteady statepower dissipation
(forward plus leakage current losses,
excludingswitching losses) as a function
of average forward current.
handbook, halfpage
02
2
0
MGC529
1
1
P
(W)
IF(AV) (A)
a=3 2 1.57 1.42
2.5
BYD77A to D
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.12 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
012
10
8
4
0
2
6
MCD594
VF (V)
IF
(A)
BYD77E to G
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0123
10
IF
0
8
MGC531
6
4
2
(A)
VF (V)
1999 Nov 15 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
Fig.14 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
103
102
10
1200
0
MGA853
100 T ( C)
jo
IR
( A)µ
VR=V
RRMmax. f = 1 MHz; Tj=25°C.
Fig.15 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MCD608
10 10 10
1
10
10
VR(V)
Cd
(pF)
2
23
A, B, C, D
E, F, G
MSB213
4.5
2.5
1.25
50
50
Fig.16 Printed-circuit board for surface mounting.
Dimensions in mm.
Fig.17 Reverse recovery definitions.
n
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1999 Nov 15 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
1999 Nov 15 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYD77 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD87
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 68
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Printed in The Netherlands 135002/03/pp12 Date of release: 1999 Nov 15 Document order number: 9397 750 06272
