2SK1315(L)(S), 2SK1316(L)(S)
Silicon N-Channel MOS FET
ADE-208-1267 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1315(L)(S), 2SK1316(L)(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1315 VDSS 450 V
2SK1316 500
Gate to source voltage VGSS ±30 V
Drain current ID8A
Drain peak current ID(pulse)*132 A
Body to drain diode reverse drain current IDR 8A
Channel dissipation Pch*260 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2SK1315(L)(S), 2SK1316(L)(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1315 V(BR)DSS 450 V ID = 10 mA, VGS = 0
breakdown voltage 2SK1316 500
Gate to source breakdown
voltage V(BR)GSS ±30 V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage 2SK1315 IDSS 250 µA VDS = 360 V, VGS = 0
drain current 2SK1316 VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 3.0 V ID = 1 mA, VDS = 10 V
Static Drain to source 2SK1315 RDS(on) 0.55 0.7 ID = 4 A, VGS = 10 V *1
on state resistance 2SK1316 0.60 0.8
Forward transfer admittance |yfs| 4.5 7.5 S ID = 4 A, VDS = 10 V *1
Input capacitance Ciss 1150 pF VDS = 10 V, VGS = 0,
Output capacitance Coss 340 pF f = 1 MHz
Reverse transfer capacitance Crss 55 pF
Turn-on delay time td(on) 17 ns ID = 4 A, VGS = 10 V,
Rise time tr 55 ns RL = 7.5
Turn-off delay time td(off) 100 ns
Fall time tf—45—ns
Body to drain diode forward
voltage VDF 0.9 V IF = 8 A, VGS = 0
Body to drain diode reverse
recovery time trr 350 ns IF = 8 A, VGS = 0,
diF/dt = 100 A/µs
Note: 1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.
2SK1315(L)(S), 2SK1316(L)(S)
4
60
40
20
0 50 100 150
Case Temperature TC (°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
2SK1315(L)(S), 2SK1316(L)(S)
5
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
6
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
7
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK1315(L)(S), 2SK1316(L)(S)
8
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