MAX34405BEZT+T - Maxim - Datasheet.Live

5/13/2011

PRODUCT RELIABILITY REPORT

FOR

DS1343

Maxim Integrated Products

4401 South Beltwood Parkway

Dallas, TX 75244-3292

Prepared by:

Don Lipps

Manager, Reliability Engineering

Maxim Integrated Products

4401 South Beltw ood Pkwy.

Dallas, TX 75244-3292

Email: don.lipps@maxim-ic.com

ph: 972-371-3739

Rev B, 1/ 3/08

Conclusion:

DS1343

The following qualification successfully meets the quality and reliability standards required of all

Maxim products:

Device Description:

A description of this device can be found in the produ ct data sheet. You can find the product data

sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm.

Reliability Derating:

The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that

are temperature accelerated.

AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts

AfT = Acceleration factor due to Temperature

tu = Time at use temperature (e.g. 55°C)

ts = Time at stress temperature (e.g. 125°C)

k = Boltzmann’s Constant (8.617 x 10-5 eV/°K)

Tu = Temperature at Use (°K)

Ts = Temperature at Stress (°K)

Ea = Activation Energy (e.g. 0.7 ev)

The activation energy of the failure mechanism is derived from either internal studies or industry

accepted standards, or activation energy of 0.7ev will be used whenever actual failure

mechanisms or their activation energies are unknown. All deratings will be done from the stress

ambient temperature to the use ambient temperature.

An exponential model will be used to determine the acceleration factor for failure mechanisms,

which are voltage accelerated.

AfV = exp(B*(Vs - Vu))

AfV = Acceleration factor due to Voltage

Vs = Stress Voltage (e.g. 7.0 volts)

Vu = Maximum Operating Voltage (e.g. 5.5 volts)

B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.)

The Constant, B, related to the failure mechanism is derived from either internal studies or industry

accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are

unknown. All deratings will be done from the stress voltage to the maximum operating voltage.

Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the

60% or 90% confidence level (Cf).

In addition, Maxim's continuous reliability monitor program ensures that all outgoing product will

continue to meet Maxim's qualit y an d reliability standards. The current status of the reliability monitor

program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html .

The failure rate, Fr, is related to the acceleration during life test by:

Fr = X/(ts * AfV * AfT * N * 2)

X = Chi-Sq statistical upper limit

N = Life test sample size

Rev B, 1/ 3/08

The calculated failure rate for this device/process is:

Only data from Operating Life or similar stresses are used for this calculation.

The parameters used to calculate this failure rate are as follows:

Cf: 60% Ea: 0.7 B: 0 Tu: 25 Vu: 5.5

°C Volts

The reliability data follows. At the start of this data is the device information. The next section is the

detailed reliability data for each stress. The reliability data section includes the latest data available

and may contain some generic data. Product Number denotes specific product data.

Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT

rate is related to MTTF by:

MTTF = 1/Fr

NOTE: MTTF is frequently used interchangeably with MTBF.

Bold

FITS: 7.5MTTF (YRS): 15252FAILURE RATE:

FAILS: 0DEVICE HOURS: 122423091

Device Information:

Process: SA E6H, 2P 2M,HPVt,PF- Ring,TC Z ,ALOCOS:GOI

Number of Transistors: 17192

Passivation: TEOS Oxide-Nitride Passivation

Die Size: 94 x 70

Interconnect: Aluminum / 0.5% Co

Gate Oxide Thickness: 150 Å

ESD HBM

DESCRIPTION READPOIN

CONDITION QTY FAILS

DATE CODE/PRODUCT/LOT FA#

1JESD22-A114 HBM 500