INTERSIL 2N3824 N-Channel JFET FOR HIGH SPEED COMMUTATORS AND CHOPPERS PIN CHIP : CONFIGURATION TOPOGRAPHY tds < 250 ohms IDioft) < 0.1 nA 10-72 5003B 0035 , 0025 5 0026 * 0025 ABSOLUTE MAXIMUM RATINGS (25C) Gate-Source Voltage ........ cece eee e reece ene e ee neee -50V ose = S Bove * bars Gate-Drain Voltage ........ 0. cece cece eee teens -50V = id Gate Current ...... Dec ee eee een eee ee eee eee 10 mA ~ ano NOTE SUBSTRATE Total Device Dissipation at (or below) 25C | Free-Air Temperature .......... 0.0 cece eee eee 300 mW Storage Temperature Range ..........---.++- -65 to +200C e c Lead Temperature (1/16" from case for 10 seconds) ... 300C o s ORDERING INFORMATION TO-72 WAFER DICE 2N3824 | 2N3824/W | 2N3824/D ELECTRICAL CHARACTERISTICS TEST CONDITIONS: 25C unless otherwise noted CHARACTERISTIC MIN | MAX | UNIT TEST CONDITIONS -0.1 nA lass Gate Reverse Current 04 nA Vas = ~30V, Vos = 0 450C BVess Gate-Source Breakdown Voltage -50 v Ig = 1 vA, Vos = 0 : 0.1 nA : ID(off) Drain Cutoff Current 04 uA Vos = 15V, Vas = -8V 150C fds(on) Drain-Source ON Resistance : 250 2 Vas = OV, ID = 0 f= 1 kHz Ciss Common-Source Input Capacitance 6 pF | Vos = 15V, Vas = 0 f=1MHz Crss Common-Source Reverse Transfer Capacitance j 3 pF Vas = -8V, Vos = 0 1-57