
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP
CSC1009 NPN
TO-92
CBE
Hi
h Volta
e Am
lifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION SYMBOL CSA709 CSC1009 UNIT
Collector -Base Voltage VCBO 160 160 V
Collector -Emitter Voltage VCEO 150 140 V
Emitter -Base Voltage VEBO 8.0 8.0 V
Collector Current IC 700 700 mA
Collector Dissipation PC 800 800 mW
Operating And Storage Junction Tj, Tstg -55 to +150
55 to +150 deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION CSA709 CSC1009 UNIT
Collector -Base Voltage VCBO IC=100uA.IE=0 >160 >160 V
Collector -Emitter Voltage VCEO IC=10mA,IB=0 >150 >140 V
Emitter-Base Voltage VEBO IE=100uA, IC=0 >8.0 >8.0 V
Collector-Cut off Current ICBO VCB=60V, IE=0 - <100 nA
VCB=100V, IE=0 <100 - nA
Emitter-Cut off Current IEBO VEB=5V, IC=0 <100 <100 nA
DC Current Gain hFE* IC=50mA,VCE=2V 40-400 40-400
Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA <0.4 <0.7 V
Base Emitter Saturation Voltage VBE(Sat) * IC=200mA,IB=20mA <1.1 <1.1 V
DYNAMIC CHARACTERISTICS
Transition Frequency ft IC=50mA, VCE=10V typ50 >30 MHz
Out-Put Capacitance Cob VCB=10V, IE=0 <10 typ8.0 pF
f=1MHz
*hFE CLASSIFICATION CSC1009 R : 40 - 80 O : 70 -140 Y : 120-240 G: 200-400
CSA70 9 - O : 70 -140 Y : 120-240 G: 200-400
*Pulse Test: PW=350us, Duty Cycle=2%
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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