NTMFS5C442NLT Power MOSFET 40 V, 2.5 mW, 130 A, Single N-Channel Features * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NTMFS5C442NLTWF - Wettable Flank Option for Enhanced Optical Inspection These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 2.5 mW @ 10 V 40 V 130 A 3.7 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V ID 130 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current 95 PD Steady State TA = 100C TA = 25C Operating Junction and Storage Temperature Source Current (Body Diode) G (4) W 83 S (1,2,3) A 28 PD 3.7 W IDM 900 A TJ, Tstg -55 to +175 C IS 81 A EAS 265 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction-to-Case - Steady State RqJC 1.8 C/W Junction-to-Ambient - Steady State (Note 2) RqJA 41 May, 2017 - Rev. 4 D 1 DFN5 (SO-8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 5C442L XXXXXX = (NTMFS5C442NLT) or XXXXXX = 442LWF XXXXXX = (NTMFS5C442NLTWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2017 MARKING DIAGRAM 1.8 Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 10 A) Parameter N-CHANNEL MOSFET 20 TA = 100C TA = 25C, tp = 10 ms D (5) 42 ID ID MAX 1 See detailed ordering, marking and shipping information on page 5 of this data sheet. Publication Order Number: NTMFS5C442NLT/D NTMFS5C442NLT ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 24.8 VGS = 0 V, VDS = 40 V mV/C TJ = 25 C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 -5.4 VGS = 10 V ID = 50 A 2.0 2.5 VGS = 4.5 V ID = 50 A 2.9 3.7 gFS VDS = 15 V, ID = 50 A V mV/C 116 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 3100 VGS = 0 V, f = 1 MHz, VDS = 25 V 1100 pF 37 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 50 A 23 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A 50 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS 5.0 nC 9.8 VGS = 4.5 V, VDS = 32 V; ID = 50 A Gate-to-Drain Charge QGD Plateau Voltage VGP 6.7 3.1 td(ON) 12 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 50 A, RG = 1.0 W tf 8.3 ns 28 9.4 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25C 0.85 TJ = 125C 0.73 tRR ta tb 1.2 V 46 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 23 ns 23 40 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTMFS5C442NLT TYPICAL CHARACTERISTICS 220 180 160 ID, DRAIN CURRENT (A) 3.8 V 3.6 V 140 3.4 V 120 3.2 V 100 80 3.0 V 60 2.8 V 40 140 120 100 80 TJ = 25C 60 40 TJ = 125C 20 20 0 0.5 1.0 2.0 1.5 2.5 0 3.0 1.5 2.0 2.5 3.0 3.5 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) Figure 1. On-Region Characteristics 4.5 4.0 3.5 3.0 2.5 2.0 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 4.0 5.0 TJ = 25C 4.5 4.0 3.5 VGS = 4.5 V 3.0 2.5 VGS = 10 V 2.0 1.5 1.0 0 20 40 60 80 100 120 140 160 180 200 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.0 100,000 VGS = 10 V ID = 50 A IDSS, LEAKAGE (nA) 1.8 1.0 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C ID = 50 A 2 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5.0 RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE (W) TJ = -55C 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW) VDS = 3 V 160 200 ID, DRAIN CURRENT (A) 180 4.0 V 10 V to 4.5 V 1.6 1.4 1.2 1.0 TJ = 150C 10,000 TJ = 125C 1000 TJ = 85C 100 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 40 NTMFS5C442NLT VGS, GATE-TO-SOURCE VOLTAGE (V) 10 3600 CISS C, CAPACITANCE (pF) 3200 2800 2400 VGS = 0 V TJ = 25C f = 1 MHz COSS 2000 1600 1200 800 400 CRSS 0 0 5 15 10 20 25 30 35 30 QT 25 8 20 6 15 QGD QGS 4 10 VDS = 32 V TJ = 25C ID = 50 A 2 5 0 0 0 40 4 8 12 16 20 24 28 32 36 40 44 48 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VDS, DRAIN-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1000 t, TIME (ns) td(off) 100 IS, SOURCE CURRENT (A) 46 tf tr td(on) 10 VGS = 4.5 V VDD = 32 V ID = 50 A TJ = 125C 41 36 31 TJ = 25C 26 21 16 TJ = -55C 11 6 1 1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TC = 25C VGS 10 V 0.01 ms 0.1 ms IPEAK (A) IDS (A) 100 1 ms dc TJ(initial) = 25C 10 TJ(initial) = 100C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 1 10 100 1E-04 1E-03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E-02 NTMFS5C442NLT 100 RqJA(t) (C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NTMFS5C442NLT 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping NTMFS5C442NLTT1G 5C442L DFN5 (Pb-Free) 1500 / Tape & Reel NTMFS5C442NLTWFT1G 442LWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel NTMFS5C442NLTT3G 5C442L DFN5 (Pb-Free) 5000 / Tape & Reel NTMFS5C442NLTWFT3G 442LWF DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFS5C442NLT PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ DETAIL A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 2X 0.495 4.560 2X 1.530 e/2 e L 1 4 3.200 4.530 K E2 1.330 2X PIN 5 (EXPOSED PAD) L1 M 0.905 1 0.965 G D2 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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