MAXIMUM RATINGS: (TC=25°C) BD439 BD441
SYMBOL BD440 BD442 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCES 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC4.0 A
Peak Collector Current (t≤10ms) ICM 7.0 A
Base Current IB1.0 A
Power Dissipation PD36 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 100 °C/W
Thermal Resistance ΘJC 3.5 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=Rated VCBO 100 μA
ICES VCE=Rated VCEO 100 μA
IEBO VEB=5.0V 1.0 mA
BVCEO IC=100mA (BD439, BD440) 60 V
BVCEO IC=100mA (BD441, BD442) 80 V
VCE(SAT) IC=2.0A, IB=200mA 0.8 V
VBE(ON) VCE=1.0V, IC=2.0A 1.5 V
hFE VCE=5.0V, IC=10mA (BD439, BD440) 20
hFE VCE=5.0V, IC=10mA (BD441, BD442) 15
hFE VCE=1.0V, IC=500mA 40
hFE VCE=1.0V, IC=2.0A (BD439, BD440) 25
hFE VCE=1.0V, IC=2.0A (BD441, BD442) 15
fTVCE=1.0V, IC=250mA 3.0 MHz
BD439 BD441 NPN
BD440 BD442 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-126 CASE
Central
Semiconductor Corp.
TM
R1 (2-February 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD439, BD440
series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process,
designed for medium power, low speed switching
applications.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
BD439 BD441 NPN
BD440 BD442 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
R1 (2-February 2009)
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING:
FULL PART NUMBER