PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 1.8 to 2.1 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * Push-pull type N-channel GaAs MESFET * High Output Power : 30 W TYP. * High Linear Gain : 13 dB TYP. * High Drain Efficiency: 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 1.96 GHz ORDERING INFORMATION (PLAN) Part Number NES1821P-30 Package Supplying Form T-86 ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NES1821P-30) ABSOLUTE MAXIMUM RATINGS (TA = +25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Gate to Source Voltage VGSO -7 V Gate to Drain Voltage VGDO -18 V ID 27 A mA Drain Current Gate Current IG 180 Total Power Dissipation PT 90 Note W Channel Temperature Tch 175 C Storage Temperature Tstg -65 to +175 C Note TC = 25C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13913EJ1V0DS00 (1st edition) Date Published December 1998 N CP(K) Printed in Japan (c) 1998 NES1821P-30 RECOMMENDED OPERATING LIMITS Parameter MAX. Unit VDS 10.0 V Gcomp 3.0 dB Channel Temperature Tch +150 C Set Drain Current IDset 4.0 A 30 MAX. Unit Drain to Source Voltage Gain Compression Note Gate Resistance Symbol Test Condition MIN. TYP. VDS = 10 V, RF OFF Rg Note Rg is the series resistance between the gate supply and FET gate. ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage Vp VDS = 2.5 V, ID = 80 mA Thermal Resistance Rth Channel to Case Output Power Pout Drain Current ID Drain Efficiency D f = 1.96 GHz, VDS = 10 V Pin = +36 dBm, Rg = 30 IDset = 4.0 A Total (RF OFF)Note 2 Linear Gain Note 1 3rd order Intermodulation Distortion GL IM3 -4.0 f = +5 MHz, Pout = 37 dBm (2-tone total) 2. IDset = 2.0 A each drain Preliminary Data Sheet TYP. 18.0 A -2.6 V 1.4 44.0 1.7 45.0 7 11 Notes 1. Pin = +20 dBm 2 MIN. C/W dBm 9 A 40 % 13 dB -40 dBc NES1821P-30 S-PARAMETERS VDS = 10 V, IDset = 2 A (each drain) START 1 GHz, STOP 3 GHz, STEP 40 MHz Marker 1: 1.8 GHz 2: 1.95 GHz 3: 2.1 GHz 4: 2.2 GHz S11 S12 1.0 +90 2.0 0.5 +135 +45 2 1 4 3 0.5 0 1 2 180 4 3 -45 -135 -2.0 -0.5 0 1 2 -1.0 -90 Rmax. = 1 Rmax. = 0.05 S21 S22 +90 1.0 2.0 0.5 +135 +45 2 4 2 180 3 0 1 0 1 0.5 1 2 3 4 -45 -135 -2.0 -0.5 -1.0 -90 Rmax. = 5 Preliminary Data Sheet Rmax. = 1 3 NES1821P-30 S-PARAMETERS VDS = 10 V, IDset = 2 A (each drain) FREQUENCY S11 S21 GHz MAG. ANG. 1.000 1.040 1.080 1.120 1.160 1.200 1.240 1.280 1.320 1.360 1.400 1.440 1.480 1.520 1.560 1.600 1.640 1.680 1.720 1.760 1.800 1.840 1.880 1.920 1.960 2.000 2.040 2.080 2.120 2.160 2.200 2.240 2.280 2.320 2.360 2.400 2.440 2.480 2.520 2.560 2.600 2.640 2.680 2.720 2.760 2.800 2.840 2.880 2.920 2.960 3.000 0.947 0.945 0.940 0.938 0.934 0.930 0.925 0.920 0.919 0.912 0.906 0.901 0.894 0.886 0.877 0.867 0.855 0.840 0.825 0.809 0.787 0.758 0.730 0.696 0.661 0.632 0.612 0.611 0.628 0.657 0.690 0.723 0.747 0.770 0.787 0.799 0.808 0.815 0.813 0.817 0.814 0.811 0.809 0.803 0.796 0.789 0.786 0.779 0.775 0.771 0.768 162.6 160.9 159.3 157.6 155.8 154.1 152.1 150.5 148.5 146.6 144.4 142.6 140.7 138.7 136.7 134.7 132.9 131.0 129.1 127.4 125.9 124.5 123.5 123.2 123.8 125.8 128.7 132.4 135.6 137.7 138.6 138.6 137.9 136.9 135.8 134.6 133.5 132.4 131.3 130.0 129.1 128.1 127.3 126.3 125.6 124.6 123.7 123.0 122.2 121.4 120.3 MAG. (deg.) 4 S12 ANG. MAG. (deg.) 1.080 1.069 1.054 1.042 1.051 1.032 1.050 1.051 1.068 1.079 1.102 1.132 1.168 1.200 1.235 1.290 1.326 1.364 1.404 1.472 1.525 1.583 1.659 1.718 1.829 1.833 1.863 1.830 1.770 1.393 1.465 1.425 1.211 1.143 0.979 0.911 0.834 0.737 0.719 0.610 0.651 0.552 0.549 0.488 0.486 0.454 0.423 0.411 0.386 0.396 0.357 61.6 60.8 58.4 57.2 54.8 53.0 51.9 49.1 48.0 44.8 43.8 40.5 38.3 34.5 31.6 28.3 23.1 20.0 14.8 11.4 4.6 1.0 -6.7 -11.5 -20.3 -29.9 -38.4 -49.8 -57.4 -70.7 -76.7 -86.2 -92.2 -98.0 -103.7 -104.8 -111.1 -111.5 -116.5 -117.0 -119.9 -123.6 -124.4 -127.3 -127.7 -131.6 -133.1 -133.8 -135.3 -137.4 -140.5 S22 ANG. MAG. ANG. 0.821 0.818 0.816 0.811 0.809 0.805 0.804 0.800 0.796 0.792 0.789 0.786 0.783 0.779 0.776 0.773 0.769 0.770 0.771 0.768 0.771 0.776 0.780 0.793 0.813 0.833 0.857 0.881 0.897 0.911 0.918 0.918 0.924 0.919 0.916 0.908 0.906 0.896 0.895 0.890 0.885 0.881 0.875 0.871 0.867 0.864 0.857 0.854 0.848 0.845 0.838 174.6 174.1 173.7 173.0 172.6 171.9 171.2 170.6 170.0 169.2 168.6 168.0 167.2 166.5 165.9 165.3 164.9 164.5 164.2 164.0 163.9 163.7 164.0 164.0 163.9 163.7 162.8 161.6 160.0 158.2 156.7 155.1 153.5 152.3 151.5 150.4 149.7 149.1 148.5 148.1 147.8 147.3 147.1 146.8 146.4 146.0 145.9 145.5 145.1 144.6 144.3 (deg.) 0.008 0.009 0.009 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.012 0.013 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.019 0.018 0.017 0.015 0.014 0.012 0.010 0.009 0.008 0.007 0.006 0.006 0.007 0.007 0.007 0.007 0.008 0.008 0.009 0.009 0.010 0.011 0.012 0.013 0.014 0.015 Preliminary Data Sheet 29.0 29.2 27.2 26.4 25.5 24.2 23.6 21.0 20.3 16.7 15.9 13.0 12.4 9.3 5.9 3.8 -0.3 -4.0 -9.0 -12.9 -19.6 -25.5 -33.0 -40.7 -50.0 -61.0 -72.8 -85.1 -99.4 -112.1 -125.7 -138.2 -154.3 -168.9 176.2 160.1 150.4 132.1 126.2 113.5 109.1 101.0 96.3 92.6 87.1 85.6 81.3 77.4 76.4 71.5 71.2 (deg.) NES1821P-30 45 G2 S S D1 G1, G2: Gate D1, D2: Drain S: Source 19.4 0.4 G1 11.4 0.3 R1.2 0.3 5.7 0.3 2.4 0.3 PACKAGE DIMENSIONS (UNIT: mm) D2 1.4 0.2 14.5 0.3 4.7 MAX. 7.8 0.2 24.5 0.3 1.8 0.2 0.1 2.4 0.2 20.9 0.3 Preliminary Data Sheet 5 NES1821P-30 RECOMMENDED MOUNTING CONDITION FOR CORRECT USE (1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange. (2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw. (3) Recommended flatness of the mount surface is less than 10 m. (roughness of surface is ) RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Recommended Condition Symbol Pin temperature: 260C Time: 5 seconds or less (per pin row) For details of recommended soldering conditions, please contact your local NEC sales office. 6 Preliminary Data Sheet - NES1821P-30 [MEMO] Preliminary Data Sheet 7 NES1821P-30 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5