The information in this document is subject to change without notice.
N-CHANNEL GaAs MES FET
NES1821P-30
30 W L-S BAND PUSH-PULL POWER GaAs MESFET
1998©
Document No. P13913EJ1V0DS00 (1st edition)
Date Published December 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for
PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power (CW) with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.1 GHz, however with different matching, 60
MHz or less of instantaneous bandwidth can be achieved anywhere from 1.8 to 2.1 GHz. The device employs
0.9
µ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance,
thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power : 30 W TYP.
• High Linear Gain : 13 dB TYP.
• High Drain Efficiency: 40 % TYP. @VDS = 10 V, IDset = 4 A, f = 1.96 GHz
ORDERING INFORMATION (PLAN)
Part Number Package Supplyi ng Form
NES1821P-30 T-86 ESD protec tive envelope
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1821P-30)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Symbol Ratings Unit
Drain to Sourc e Voltage VDS 15 V
Gate to Source Voltage VGSO –7 V
Gate to Drain V ol tage VGDO –18 V
Drain Current ID27 A
Gate Current IG180 mA
Total P ower Dissipation PT90Note W
Channel Temperature Tch 175 °C
Storage Temperat ure Tstg –65 to +175 °C
Note TC = 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
Preliminary Data Sheet2
NES1821P-30
RECOMMENDED OPERATING LIMITS
Parameter Symbol Test Condit i on MIN. TYP. MAX. Unit
Drain to Sourc e Voltage VDS 10.0 V
Gain Compress i on Gcomp 3.0 dB
Channel Temperature Tch +150 °C
Set Drain Current IDset VDS = 10 V, RF OFF 4.0 A
Gate ResistanceNote Rg30 Ω
Note Rg is the series resistance between the gate supply and FET gate.
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Saturated Drai n Current I DSS VDS = 2.5 V, VGS = 0 V 18.0 A
Pinch-of f Volt age VpVDS = 2.5 V, ID = 80 mA –4.0 –2.6 V
Thermal Resistance Rth Channel to Case 1.4 1.7 °C/W
Output Power Pout 44.0 45.0 dBm
Drain Current ID79A
Drain Eff i ciency
η
D40 %
Linear Gain Note 1 GL
f = 1.96 GHz, VDS = 10 V
Pin = +36 dBm, Rg = 30 Ω
IDset = 4.0 A Total (RF OFF)Note 2
11 13 dB
3rd order Intermodul at i on
Distortion IM3
∆
f = +5 MHz,
Pout = 37 dBm (2-t one total) –40 dBc
Notes 1. Pin = +20 dBm
2. IDset = 2.0 A each drain
Preliminary Data Sheet 3
NES1821P-30
S-PARAMETERS
VDS = 10 V, IDset = 2 A (each drain)
START 1 GHz, STOP 3 GHz, STEP 40 MHz
+90°
+135°+45°
±180°0°
–135°
–90°
–45°
2
1
3
4
2
1
34
+90°
+135°+45°
±180°0°
–135°
–90°
–45°
2
1
43
2
1
3
4
1.0
0.5 2.0
0
0.5 1 2
∞
–0.5
–1.0
–2.0
1.0
0.5 2.0
0∞
–0.5
–1.0
–2.0
S
11
S
12
S
21
S
22
R
max.
= 1 R
max.
= 0.05
Marker
1: 1.8 GHz
2: 1.95 GHz
3: 2.1 GHz
4: 2.2 GHz
R
max.
= 5 R
max.
= 1
0.5 1 2
Preliminary Data Sheet4
NES1821P-30
S-PARAMETERS
VDS = 10 V, IDset = 2 A (each drain)
FREQUENCY S11 S21 S12 S22
GHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
(deg.) (deg.) (deg.) (deg.)
1.000
1.040
1.080
1.120
1.160
1.200
1.240
1.280
1.320
1.360
1.400
1.440
1.480
1.520
1.560
1.600
1.640
1.680
1.720
1.760
1.800
1.840
1.880
1.920
1.960
2.000
2.040
2.080
2.120
2.160
2.200
2.240
2.280
2.320
2.360
2.400
2.440
2.480
2.520
2.560
2.600
2.640
2.680
2.720
2.760
2.800
2.840
2.880
2.920
2.960
3.000
0.947
0.945
0.940
0.938
0.934
0.930
0.925
0.920
0.919
0.912
0.906
0.901
0.894
0.886
0.877
0.867
0.855
0.840
0.825
0.809
0.787
0.758
0.730
0.696
0.661
0.632
0.612
0.611
0.628
0.657
0.690
0.723
0.747
0.770
0.787
0.799
0.808
0.815
0.813
0.817
0.814
0.811
0.809
0.803
0.796
0.789
0.786
0.779
0.775
0.771
0.768
162.6
160.9
159.3
157.6
155.8
154.1
152.1
150.5
148.5
146.6
144.4
142.6
140.7
138.7
136.7
134.7
132.9
131.0
129.1
127.4
125.9
124.5
123.5
123.2
123.8
125.8
128.7
132.4
135.6
137.7
138.6
138.6
137.9
136.9
135.8
134.6
133.5
132.4
131.3
130.0
129.1
128.1
127.3
126.3
125.6
124.6
123.7
123.0
122.2
121.4
120.3
1.080
1.069
1.054
1.042
1.051
1.032
1.050
1.051
1.068
1.079
1.102
1.132
1.168
1.200
1.235
1.290
1.326
1.364
1.404
1.472
1.525
1.583
1.659
1.718
1.829
1.833
1.863
1.830
1.770
1.393
1.465
1.425
1.211
1.143
0.979
0.911
0.834
0.737
0.719
0.610
0.651
0.552
0.549
0.488
0.486
0.454
0.423
0.411
0.386
0.396
0.357
61.6
60.8
58.4
57.2
54.8
53.0
51.9
49.1
48.0
44.8
43.8
40.5
38.3
34.5
31.6
28.3
23.1
20.0
14.8
11.4
4.6
1.0
–6.7
–11.5
–20.3
–29.9
–38.4
–49.8
–57.4
–70.7
–76.7
–86.2
–92.2
–98.0
–103.7
–104.8
–111.1
–111.5
–116.5
–117.0
–119.9
–123.6
–124.4
–127.3
–127.7
–131.6
–133.1
–133.8
–135.3
–137.4
–140.5
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.012
0.013
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.018
0.018
0.018
0.019
0.019
0.018
0.017
0.015
0.014
0.012
0.010
0.009
0.008
0.007
0.006
0.006
0.007
0.007
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.011
0.012
0.013
0.014
0.015
29.0
29.2
27.2
26.4
25.5
24.2
23.6
21.0
20.3
16.7
15.9
13.0
12.4
9.3
5.9
3.8
–0.3
–4.0
–9.0
–12.9
–19.6
–25.5
–33.0
–40.7
–50.0
–61.0
–72.8
–85.1
–99.4
–112.1
–125.7
–138.2
–154.3
–168.9
176.2
160.1
150.4
132.1
126.2
113.5
109.1
101.0
96.3
92.6
87.1
85.6
81.3
77.4
76.4
71.5
71.2
0.821
0.818
0.816
0.811
0.809
0.805
0.804
0.800
0.796
0.792
0.789
0.786
0.783
0.779
0.776
0.773
0.769
0.770
0.771
0.768
0.771
0.776
0.780
0.793
0.813
0.833
0.857
0.881
0.897
0.911
0.918
0.918
0.924
0.919
0.916
0.908
0.906
0.896
0.895
0.890
0.885
0.881
0.875
0.871
0.867
0.864
0.857
0.854
0.848
0.845
0.838
174.6
174.1
173.7
173.0
172.6
171.9
171.2
170.6
170.0
169.2
168.6
168.0
167.2
166.5
165.9
165.3
164.9
164.5
164.2
164.0
163.9
163.7
164.0
164.0
163.9
163.7
162.8
161.6
160.0
158.2
156.7
155.1
153.5
152.3
151.5
150.4
149.7
149.1
148.5
148.1
147.8
147.3
147.1
146.8
146.4
146.0
145.9
145.5
145.1
144.6
144.3
Preliminary Data Sheet 5
NES1821P-30
PACKAGE DIMENSIONS (UNIT: mm)
1.4 ± 0.2
2.4 ± 0.2
1.8 ± 0.2 4.7 MAX.
19.4 ± 0.4
11.4 ± 0.3
5.7 ± 0.3
2.4 ± 0.3
0.1
14.5 ± 0.3
7.8 ± 0.2
20.9 ± 0.3
24.5 ± 0.3
D2D1
G2G1
SS
45˚
R1.2 ± 0.3
G1, G2: Gate
D1, D2: Drain
S: Source
Preliminary Data Sheet6
NES1821P-30
RECOMMENDED MOUNTING CONDITION FOR CORRECT USE
(1) Fix to a heatsink or mount surface completely with screw at the four holes of the flange.
(2) Recommended torque strength of the screw is 3 kgF typical using M2.3 type screw.
(3) Recommended flatness of the mount surface is less than ±10
µ
m. (roughness of surface is )
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Conditions Recommended Condition Sy m bol
Partial Heating Pin tem perat ure: 260°C
Time: 5 s econds or les s (per pin row) –
For details of recommended soldering conditions, please contact your local NEC sales office.
Preliminary Data Sheet 7
NES1821P-30
[MEMO]
NES1821P-30
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
