W55FXX SERIAL FLASH EEPROM SERIES GENERAL DESCRIPTION The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeechTM series. The single voltage supply eliminates the need for an extra pump circuit during programming and erasing. FEATURES * Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series * 128K/512K/1M/2M memory sizes available * Directly cascadable for longer duration ( W55F01 can't cascade) * Fast frame-write operation * - Frame (32 bits) program cycle time: 400 S (typ.) Fast whole-chip-erase duration: 50 mS (max.) * Read data access time: 500 nS (max.) * Program/erase cycles: 10,000 (typ.) * Data retention: 10 years (typ.) * Low power consumption: - Operating: 5 mA (typ.) - Standby: 2 A (typ.) PIN CONFIGURATION EOP 1 8 MODE CTRL 2 7 VDD VSS 3 6 CLK ADDR 4 5 DATA -1- Publication Release Date: April 15, 2005 Revision A4 W55FXX PIN DESCRIPTION NO. PIN NAME I/O DESCRIPTION 1 EOP O End of process signal output 2 CTRL I Enable signal for program and erase operations when MODE = 0 Input clock for mode counter when MODE = 1 3 VSS I Ground 4 ADDR I Input clock for start adress shift-in 5 DATA I/O 6 CLK I Input clock for data write-in and read-out 7 VDD I Positive voltage supply 8 MODE I Mode select control pin Bidirectional data line BLOCK DIAGRAM CLK DATA ADDR shift register /address counter page-code cells /page-code flag /comparator Output Buffer POR Circuit Decoder Core Array Write-in Buffer Pump Circuit CTRL MODE EOP Control Circuit -2- W55FXX ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL CONDITION RATED VALUE UNIT Operating Temp. TOPR - 0 to +70 C Storage Temp. TSTG - -65 to +150 C Power Supply VDD-VSS - -0.3 to +7.0 V VDC All pins -0.5 to VDD +1.0 V VTRAN All pins -1.0 to VDD +1.0 V Input DC Voltage Transient Voltage (< 20 nS) Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. DC CHARACTERISTICS (VDD = 4.5V, VSS = 0V, TA = 25 C) PARAMETER Operating voltage SYMBOL CONDITIONS VDD - LIMITS UNIT MIN. TYP. MAX. 2.4 4.5 5.5 V - 2 4 A - 5 10 mA VDD V (Note) Standby current ISB All inputs = GND DATA & EOP open Operating current IOP In read mode DATA & EOP open FOSC = 1 MHz Input voltage High VIH Low VIL Sink IOL Drive All input pins 2.0 -0.3 - 0.8 V VOL = 0.5V 2.5 5 - mA IOH VOH = 4.0V -2.5 -5 - mA Input leakage current of CTRL, MODE ILI1 VIN = 4.5V - - 4.5 A Input leakage current of DATA ILI2 VIN = 0V - - -4.5 A Output current Note: For been working with W52900, the minimum operating voltage couldn't be less than 3.6 volt. -3- Publication Release Date: April 15, 2005 Revision A4 W55FXX AC CHARACTERISTICS (VDD = 4.5V, VSS = 0V, TA = 25 C) PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT MODE pulse width TMP - 1 - - S CTRL pulse width TWP 400 - 700 S Clock frequency of ADDR Page coding mode FADDR - - - 1 MHz Clock frequency of CLK FCLK - - - 1 MHz Clock frequency of CTRL FCTRL - - - 1 MHz Read/Write mode 1 - - S Interval between ADDR end & CLK begin TI Interval between CLK & CTRL TGCC Write mode 1 - - S Interval between ADDR & CTRL TGCA Page coding mode 1 - - S Interval between addressing end & block-erase begin TAE Block erase mode 1 - - S Interval between MODE rising edge & CTRL clock begin TMB Mode selection 500 - - nS Interval between CTRL clock end & MODE falling edge TME Mode selection 500 - - nS Interval between MODE falling edge & another pin active TGM - 1 - - S Data access time TRA Read mode - - 500 nS Data set up time TWS Write mode 250 - - nS TAS - 250 - - nS TRH Read mode 0 - - nS TWH Write mode 10 - - nS TAH - 10 - - nS Programming duration TPR Write mode 400 - - S Whole-chip-erase time TWE Whole-chip-erase mode 45 - 50 mS Block-erase time TBE Block-erase mode 40 - 45 mS Data hold time -4- W55FXX TIMING WAVEFORMS Read Cycle Write Cycle 1/F CLK 1/F CLK CLK CLK DATA DATA T RA TWS TWH T RH Address Shift-in Cycle Mode Select Duration 1/F ADDR ADDR MODE DATA CTRL TAS TAH TMB 1/FCTRL TME Page-code Cell Read Out Cycle 1/F CTRL CTRL DATA TRA TRH Note: The duty cycle of any clock is 50%. -5- Publication Release Date: April 15, 2005 Revision A4 W55FXX APPLICATION CIRCUITS (for reference only) For Voice Recorder Applications W51300 EOP W55FXX ADDR ADDR EOP DATA DATA MODE CLK CLK CTRL CTRL MODE W51300 EOP W55FYY W55FYY W55FYY ADDR ADDR EOP ADDR EOP ADDR EOP DATA DATA MODE DATA MODE DATA MODE CLK CTRL CLK CLK CLK CTRL CTRL CTRL MODE XX: W55F01/05/10/20 YY: W55F05/10/20 For PowerSpeech Applications Romless IC W55FXX ADDR ADDR EOP DATA DATA MODE CLK CLK CTRL -6- Romless IC W55FXX W5280/ W58100 W55F01/05/10/20 W52900/ W58300/ W56000 W55F05/20 W55FXX ORDERING INFORMATION PART NO. MEMORY SIZE W55F01 128K BITS W55F05 512K BITS W55F10 1M BITS W55F20 2M BITS Revision history version date page description A3 Sep. 1999 - - A4 April 15, 2005 7 Add Important Notice Important Notice Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales. Headquarters Winbond Electronics (H.K.) Ltd. Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5792697 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Taipei Office Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change without notice. -7- Publication Release Date: April 15, 2005 Revision A4