BAV19W thru BAV21W Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes SOD-123 .022 (0.55) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Band Top View Mounting Pad Layout Features 0.055 (1.40) 0.055 (1.40) .006 (0.15) max. .053 (1.35) max. .067 (1.70) .055 (1.40) .004 (0.1) max. 0.094 (2.40) Dimensions in inches and (millimeters) .010 (0.25) min. * Silicon Epitaxial Planar Diodes * For general purpose * These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to BAV21WS. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.01g Marking BAV19W = A8 Code: BAV20W = A9 BAV21W = AA Packaging Codes/Options: D3/10K per 13" reel (8mm tape), 30K/box D4/3K per 7" reel (8mm tape), 30K/box Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Value Unit BAV19W BAV20W BAV21W VR 100 150 200 V BAV19W BAV20W BAV21W VRRM 120 200 250 V IF 250(1) mA Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25C and f 50Hz IF(AV) 200(1) mA Repetitive Peak Forward Current at f 50Hz, = 180, Tamb = 25C IFRM 625 (1) mA Surge Forward Current at t < 1s, Tj = 25C IFSM 1 Continuous Reverse Voltage Repetitive Peak Reverse Voltage Forward DC Current at Tamb = 25C Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range Ptot RJA Tj TS A (1) mW (1) C/W 410 375 (1) 150 C (1) -65 to +150 C Note: (1) Valid provided that leads are kept at ambient temperature. Document Number 88150 14-May-02 www.vishay.com 1 BAV19W thru BAV21W Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit VF IF = 100mA IF = 200mA -- -- -- -- 1.00 1.25 V IR VR = 100V VR = 100V, Tj = 100C VR = 150V VR = 150V, Tj = 100C VR = 200V VR = 200V, Tj = 100C -- -- -- -- -- -- -- -- -- -- -- -- 100 15 100 15 100 15 nA A nA A nA A rf IF = 10mA -- 5 -- Ctot VR = 0, f = 1MHz -- 1.5 -- pF trr IF = 30mA, IR = 30mA Irr = 3mA, RL = 100 -- -- 50 ns J Forward Voltage Leakage Current BAV19W BAV19W BAV20W BAV20W BAV21W BAV21W Dynamic Forward Resistance Capacitance Reverse Recovery Time Ratings and Characteristic Curves (T www.vishay.com 2 A = 25C unless otherwise noted) Document Number 88150 14-May-02 BAV19W thru BAV21W Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88150 14-May-02 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1