Features ACT-F2M32A High Speed 64 Megabit +++ Sector Erase - FLASH Multichip Module CIRCUIT TECHNOLOGY www.aeroflex.com/act1.htm mg 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package @ Overall Configuration is 2M x 32 m@ +5V Power Supply / +5V Programing Operation @ Access Times of 90, 120 and 150 ns mg Erase/Program Cycles 100,000 Minimum m@ Sector erase architecture (Each Die) e32 uniform sectors of 64 Kbytes each e Any combination of sectors can be erased. Also supports full chip erase e Sector group protection is user definable m Embedded Erase Algorithims Automatically pre-programs and erases the die or any sector m Embedded Program Algorithims Automatically programs and verifies data at specified address m Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion m@ Hardware RESET pin Resets internal state machine to the read mode m Erase Suspend/Resume Supports reading or programming data to a sector not being erased m@ Packaging Hermetic Ceramic e 68 Lead, .94 x .94 x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) g@ Internal Decoupling Capacitors for Low Noise Operation mg Commercial, Industrial and Military Temperature Ranges @ MIL-PRF-38534 Compliant MCMs Available Block Diagram CQFP(F18) Pin Description Standard Configuration 100-31 Data I/O CEt CE2 CEs CE4| Ao-20| Address Inputs RESET WE Write Enables WE = OE CE1-4 Chip Enables Ao- A20 OE | Output Enable RY/BY*7 ? f f | RY/BY| Ready/Busy amxe | | 2mxe | | 2mxe | | 2mxe | [RESET Reset Vcc Power Supply of of of of GND Ground vOo-7 VO81s VO16e-23 024-311 NC_| Not Connected Block Diagram CQFP(F18) Optional Configuration E3 WE4 CEa4 WE1 CE1WE2 CE2 WE3 C RESET OE Ao-A20 I l I | 2Mx8 2Mx8 2Mx8 2Mx8 1/08-15 1/016-23 1 4 4 1/00-7 1/024-31 Pin Description 1/O0-31 Data /O A0d-20 | Address Inputs WE1-4| Write Enable CE1-4] Chip Enables OE | Output Enable RESET Reset Vcc Power Supply GND Ground NC Not Connected General Description Utilizing AMDs Sector Erase Flash Memory Die, _ the ACT-F2M32A is a high speed, 64 megabit CMOS _ flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications. The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups. of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). The command__register is written by bringing WE to a logic low level (ViL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 90ns, 120ns and 150ns maximum are standard. A\eroflex Circuit Technology - Advanced Multichip Modules SCD1666A REV A 9/12/97General Description, Cont'd. The ACT-F2M82A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94" SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment temperature range of -55C to +125C. The ACT-F2M32A can be programmed (both read and write functions) in-system using the +5.0V Vcc power supply. A 12.0V VPP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle bit (DQ6). The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated. Each block can be independently erased and programmed 100,000 times at +25C. For Detail Information regarding the operation of the Am29F016 Sector Erase Flash Memory, see the AMD datasheet (Publication 18805). Aeroflex Circuit Technology 2 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700Absolute Maximum Ratings Parameter Range Units Case Operating Temperature Range -55 to +125 C Storage Temperature Range -65 to +150 C Voltage with Respect to GND (All pins except Ag) -2.0 to +7.0 V Voltage on Pins Ag, OE, RESET ) -2.0 to +13.5 Vv Vcc Supply Voltage with Respect to Ground ( -2.0 to +7.0 V Output Short Circuit Current ) 200 mA Notes: 1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on input/output pins is Vcc + 0.5V, which may overshoot to Vcc + 2.0V for periods up to 20ns. 2. Minimum DC input voltage on Ag ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns. Maximum DC input voltage on Ag is +12.5V which may overshoot to 14V for periods up to 20ns. 3. No more than one output shorted to ground for no more than 1 second. NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability. Recommended Operating Conditions Symbol | Parameter Minimum Maximum Units vec 5V Power Supply Voltage (10%) +4.5 +5.5 Vv VIH Input High Voltage (CMOS) 0.7 x Vcc Voc + 0.3 Vv VIL Input Low Voltage -0.5 +0.8 V Te Operating Temperature (Military) -55 +125 C Capacitance (f = 1MHz, Tc = 25C, Standard Configuration) Symbol | Parameter Maximum Units CAD AO A20 Capacitance 50 pF CoE | OE Capacitance 50 pF CcE | CE Capacitance 20 pF CRESET | RESET Capacitance 50 pF Cwe | WE Capacitance 60 pF Cry/sy | RY/BY Capacitance 50 pF Cio 1/00 - 1/031 Capacitance 20 pF Capacitance Guaranteed by design, but not tested. DC Characteristics - CMOS Compatible (Tc = -55C to +125C, Vcc = +4.5V to + 5.5V, Unless otherwise specified) Parameter sym Conditions Min Max | Units Input Load Current NL Vcc = VccMax., VIN = Vcc or GND 10 pA AQ Leakage Current ILIT Vcc = VecMax., A9 = +12V 50 yA Output Leakage Current ILO Vcc = VccMax., VIN = GND to Vcc 10 A Vcc Active Read Current Icc1 =| CE=Vit, OF = Vi 160 | mA Vcc Active Program/Erase Current Icc2. | CE=Vi_, OE=VIH 240 | mA Vec Standby Current Icc3 | Vcc = VecMax., CE = RESET = Vcc +0.3V 4 mA Vcc Standby Current (Reset) Icc4 | Vcc = VccMax., RESET = Vcc + 0.3V 4 mA Output Low Voltage VOL Vcc = VccMin., loL = 12 mA 0.45 Vv i 0.85 x Output High Voltage VoH1 | Vcc = VocMin., loH =-2.5 mA Vec Vv : Vcc - VOH2 | Vcc = VccMin., |oH = -100 pA 0.4V Vv Low Vcc Lock-Out Voltage VLKO 3.2 4.2 Vv Notes: 1. Not 100% tested. Aeroflex Circuit Technology 3 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700AC Characteristics Write/Erase/Program Operations WE Controlled (Tc = -55C to +125C, Vcc = +4.5V to + 5.5V, Unless otherwise specified) Parameter | Parameter 90ns 120ns 150ns Parameter Symbol Symbol . . . Units Min | Max] Min | Max| Min | Max Standard JEDEC Write Cycle Time twe tAVAV 90 120 150 ns Address Setup to WE Going Low tas tAVWL 0 0 0 ns Address Hold Time from CE High taH tWLAX 45 50 50 ns Data Setup to WE Going High tos tpvwH 45 50 50 ns Data Hold Time from WE High ton twHDx 0 0 0 ns 0 Enable Hold Ti Read ; 0 0 0 ns OEH utput Enable Hold Time Toggle Bit | and Data Polling 10 10 10 ns Read Recover Time Before Write _ _ tGHWL tGHWL 0 0 0 ns (OE High to WE Low) CE Setup Time from WE Low tes tELWL ns CE Hold Time from WE High tcn tWHEH ns WE Pulse Width twp twLwH 45 50 50 ns WE Pulse Width High twPH twHWL 20 20 20 ns Byte Programming Operation tWHWH1 twHwH1 8 8 8 ys Sector Erase Operation tWHWH2 tWHWH2 15 15 15 Sec Vcc Set-Up Time tvcs 50 50 50 ys Rise Time to VID tvIDR 500 500 500 ns OE Setup Time to WE Active toesp 4 4 4 Us Reset Pulse Width tre 500 500 500 ns Program/Erase Valid to RY/BY tausy 40 50 60 ns Delay Notes: 1. Not 100% tested. AC Characteristics Read Only Operations (Tc = -55C to +125C, Vcc = +4.5V to + 5.5V, Unless otherwise specified) Parameter | Parameter 90ns 120ns 150ns Parameter Symbol Symbol . . . Units Min | Max] Min | Max| Min | Max Standard JEDEC Read Cycle Time tre tAVAV 90 120 150 ns Address to Output Delay tacc tavav 90 120 150 ns CE to Output Delay tce tELav 90 120 150 ns OE to Output Delay toe taLav 40 50 55 ns CE to Output in High Z toF tEHOZ 20 30 35 ns OE to Output in High Z tDF taHaz 20] 0 | 30] oO | 235 ns Output Hold from Addresses, CE or OE Change, Whichever Occurs tou taxax 0 0 0 ns First RESET Low to Read Mode ) tREADY 20 20 20 Us Notes: 1. Not 100% tested. Aeroflex Circuit Technology 4 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700AC Characteristics Write/Erase/Program Operations CE Controlled (Tc = -55C to +125C, Vcc = +4.5V to + 5.5V, Unless otherwise specified) Parameter | Parameter 90ns 120ns 150ns Parameter Symbol Symbol . . . Units Standard JEDEC Min | Max] Min | Max| Min | Max Write Cycle Time twe tavVAV 90 120 150 ns Address Setup to CE Going Low tas TAVEL 0 0 0 ns Address Hold Time from CE Low taH tELAX 45 50 50 ns Data Setup to CE Going High tps tDVEH 45 50 50 ns Data Hold Time from CE High {oH tEHDX ns Output Enable Setup Time ) toes ns Read 0 0 0 ns Output Enable Hold Time ( Toggle Bit | and Data Polling OEH 10 10 10 ns OE HohteWE ean Write TGHEL TGHEL 0 0 0 ns CE Setup Time from WE Low tws tWLEL ns WE Hold Time from CE High twH tEHWH ns WE Pulse Width tep tELEH 45 50 50 ns WE Pulse Width High tePH tELEL 20 20 20 ns Byte Programming Operation tWHWH1 twHwH1 8 8 8 ys Sector Erase Operation tWHWH2 tWHWH2 15 15 15 Sec Notes: 1. Not 100% tested. Aeroflex Circuit Technology 5 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700Vcc Ri Device Under Test OUT Addresses Data +5 Volt ef \ AC Test Circuit Test Configuration Component Values Test Configuration CL Ri R2 (pF) (Q) (Q) 3.3V Standard Test 50 990 770 5V Standard Test 50 580 390 OL includes jo capactance Parameter Typical Units Input Pulse Level 0-3.0 Vv Input Rise and Fall 5 ns Input and Output Timing Reference Level 1.5 Vv AC Waveforms for Write and Erase Operations, WE Controlled 3rd Bus Cycle s yi 5555H x a two Data Polling tou tcE _tGHWL i \ Sf NE + twHwH1> +I toE + [+ (0) Caan foocr) Tf |} 4 + > _| Aeroflex Circuit Technology SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700AC Waveforms for Write and Erase Operations, CE Controlled Addresses Addresses Outputs tAH [/* Data Polling -+-_ twHwWH1_ AC Waveform For Read Operations tRe x Addresses Stable XK tacc e TOE >4 tOEH > tCE toH ~ (K . yy High Z Output Valid y_ Aeroflex Circuit Technology SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700GND CE3 A5 A4 A3 A2 At Ao Pin Numbers & Functions 68 Pins Dual-Ca CQFP (Standard uration Function 9g RESET 10 14 12 13 14 15 16 17 1/Oo /O4 1/02 1/03 1/04 1/05 1/06 1/07 Pin # 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Function Pin # Function Pin # Function GND 35 OE 52 GND /Os 36 CE2 53 /O23 1/09 37 A17 54 1/022 /O10 38 RY/BY 55 O21 /O11 39 NC 56 1/020 O12 40 NC 57 O19 1/013 41 A18 58 1/018 O14 42 A19 59 /O017 O15 43 A20 60 //016 Vec 44 /O31 61 Vec A114 45 1/030 62 A10 A12 46 1/029 63 Ag A13 47 1/028 64 A8 A14 48 1/027 65 A7 A15 49 1/026 66 A6 Ai6 50 /025 67 WE CE1 54 /O24 68 CE4 Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1 "F18" CQFP Package 990 SQ 7 ~y +.010 / .940 SQ / 1 Pin9 _ Pin ry mM > envoy III | pings | cost Tc Pols A +.002 #008) ] +-002 ~| a = .040 aa I 015 1 te a3 SS F +002 Detail A I Lf = .800 SQ = REF 680 50 I I = | Metal spacer I I I . . . LL Nae Pin 27 | .800 REF _ Pin 43 See Detail A All dimensions in inches Aeroflex Circuit Technology 8 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700(\EROFLEX CIRCUIT TECHNOLOGY Ordering Information Model Number Screening Speed Package ACT-F2M32A-090F18C Commercial (0C to +70C) 90 ns CQFP ACT-F2M32A-120F18C Commercial (0C to +70C) 120 ns CQFP ACT-F2M32A-150F18C Commercial (0C to +70C) 150 ns CQFP ACTF2M32A090F 181 Industrial (-40C to +85C) 90 ns CQFP ACTF2M32A120F 181 Industrial (-40C to +85C) 120 ns CQFP ACTF2M32A150F 181 Industrial (-40C to +85C) 150 ns CQFP ACTF2M32A090F 18M Military (-55C to +125C) 90 ns CQFP ACTF2M32A120F18M Military (-55C to +125C) 120 ns CQFP ACT-F2M32A150F18M Military (-55C to +125C) 150 ns CQFP ACT-F2M32A-090F 18Q DESC Drawing Pending 90 ns CQFP MIL-PRF-38534 Compliant ACT-F2M32A-120F18Q DESC Drawing Pending 120 ns CQFP MIL-PRF-38534 Compliant ACT-F2M32A-150F18Q DESC Drawing Pending 150 ns CQFP MIL-PRF-38534 Compliant Part Number Breakdown ACT- F 2M 32 A- 090 F18 M Aeroflex Circuit __ TT T. Technology Memory Type Screening S=SRAM C = Commercial Temp, 0C to +70C F = FLASH EEPROM | = Industrial Temp, -40C to +85C E =EEPROM T = Military Temp, -55C to +125C D = Dynamic RAM Memory Depth, Locations Memory Width, Bits M = Military Temp, -55C to +125C, Screened * Q = MIL-PRF-38534 Compliant/SMD if applicable Package Type & Size Surface Mount Packages F18 = .94" SQ 68 Lead\Dual-Cavity CQFP Pinout Options A= One WE, RY/BY access on Pin 38 - Standard pinout C = Four WEs & RY/BY internally tied - Optional pinout Memory Speed, ns (+5V Vcc) * Screened to the individual test methods of MIL-STD-883 Specifications subject to change without notice Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 www.aeroflex.com/act1.htm Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: (800) 843-1553 E-Mail: sales-act@aeroflex.com Aeroflex Circuit Technology 9 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700