GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 OPTOELECTRONICS CORP. Large Area InGaAs Photodiodes * High Responsivity * High Shunt Resistance * Low Capacitance: High Speed * Planar Design for High Reliability GPD Optoelectronics Corp. GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 CC Electrical Characteristics @ 25 C Active Diameter (mm.) Responsivity @ 850nm A/W min. (typ.)1300nm 1550nm GAP500 GAP1000 GAP2000 GAP3000 0.5 1.0 2.0 3.0 5.0 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.95 0.95 0.95 0.95 0.95 100 (25)@5V 200 (50)@1V 500 (200)@1V 10A(5A)@0.3V 120 (80) 500 (300) 1000 (600) 1500 (1000) 50(30) 150(100)@-3V 300(250)@-2V n/a 40(5V) 5.3 (0V) 4.0(0V) 1.0(0V) 5.0 (5V) 50 (0V) 100 (0V) 300(0V) 10 (50) 6 (30) 2.0 (8) 25K (50K) .01 .03 .05 0.28 +10 +8 +8 +8 TO-46 (mod.) TO-5 TO-5 TO-8 GAP3000 -40 to 125 -40 to 85 2 10 10 50 GAP5000 -40 to 125 -40 to 85 2 10 10 50 Dark Current nA max. (typ.) 30 (6)@5V CJ @ 0V pF max (typ.) 40 (20) CJ @ -5V pF max (typ.) 10 (8) Bandwidth 50 -3dB 200 (5V) Tr RL=50 ns (typ.) 2.5 (5V) RS M min (typ.) 50 (125) NEP (1550 nm)pW/Hz min. .008 Linear range (0.2dB) dBm +10 Case Style (standard) TO-46 (mod.) GAP5000 Maximum Ratings GAP500 Storage Temperature C -40 to 125 Operating Temperature C -40 to 85 Reverse Voltage V 20 Reverse Current mA 10 Forward Current mA 10 Power Dissipation mW 100 GAP1000 -40 to 125 -40 to 85 20 10 10 100 GAP2000 -40 to 125 -40 to 85 3 10 10 50 GPD Optoelectronics Corp. 4/03 GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 Effect of Temperature on Responsivity Responsivity (A/W) 1.00E+00 o -35 C o 25 C 1.00E-01 o 80 C 1.00E-02 1.00E-03 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 Wavelength (nm) Capacitance vs Voltage Capacitance vs Voltage 100 500 Capacitance (pF) Capacitance (pF) 600 400 300 GAP3000 200 GAP2000 100 0 0 1 2 3 5 4 6 7 9 8 GAP1000 10 1 10 GAP500 0 3 2 1 Reverse Voltage 9 8 7 10 GAP1000 GAP500 1.00E+10 Current (nA) Shunt Resistance (Ohms) 75 6 100 (C)-25 50Temperature 25 -25 50 25 00 75 5 Dark Current vs Reverse Bias Shunt Resistance vs. 1000/T(K) 1.00E+11 4 Reverse Voltage GAP1000 1.00E+09 GAP2000 1.00E+08 1.00E+07 10 GAP500 1 0.1 1.00E+06 1.00E+05 2.6 0.01 2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4 1000/T(K) 0 2 4 6 8 10 12 14 16 Bias Voltage (-V) Extended short-wavelength response also available. GPD Optoelectronics Corp. 4/03 GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 Package Outlines Dimensions in mm (in.) Many other packages (including lensed packages) available. TO-46 (modified) TO-5 GPD Optoelectronics Corp. (formerly Germanium Power Devices) has been a manufacturer of power transistors and diodes since 1973 and a manufacturer of infrared photodetectors for more than ten years . GPD offers Germanium p-n, p-i-n, APD and InGaAs p-i-n high-speed and large area photodetectors for infrared radiation detection and telecommunications applications. GPD can offer you a photodetector that meets your technical and cost requirements. GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Bellcore testing requirements(TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications. GPD Optoelectronics Corp. 7 Manor Parkway Salem, NH 03079-2842 Tel: (603) 894-6865 Fax: (603) 894-6866 E-mail address: sales@gpd-ir.com Web Site:http://www.gpd-ir.com 4/03