GAP500 - GPD Optoelectronics Corp.

GAP 500 GAP 1000

GAP 2000 GAP 3000

GAP 5000

• High Responsivity

• High Shunt Resistance

• Low Capacitance: High Speed

• Planar Design for High Reliability

OPTOELECTRONICS CORP.

Large Area InGaAs Photodiodes

GPD

GPD Optoelectronics Corp.

Dark Current nA max. (typ.) 30 (6)@5V 100 (25)@5V 200 (50)@1V 500 (200)@1V 10µA(5µA)@0.3V

CJ @ 0V pF max (typ.) 40 (20) 120 (80) 500 (300) 1000 (600) 1500 (1000)

CJ @ -5V pF max (typ.) 10 (8) 50(30) 150(100)@-3V 300(250)@-2V n/a

Bandwidth 50 Ω -3dB 200 (5V) 40(5V) 5.3 (0V) 4.0(0V) 1.0(0V)

Tr RL=50Ω ns (typ.) 2.5 (5V) 5.0 (5V) 50 (0V) 100 (0V) 300(0V)

RS MΩ min (typ.) 50 (125) 10 (50) 6 (30) 2.0 (8) 25KΩ (50KΩ)

NEP (1550 nm)pW/√Hz min. .008 .01 .03 .05 0.28

Linear range (±0.2dB) dBm +10 +10 +8 +8 +8

Case Style (standard) TO-46 (mod.) TO-46 (mod.) TO-5 TO-5 TO-8

Maximum Ratings

GAP500 GAP1000 GAP2000 GAP3000 GAP5000

Storage Temperature °C -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125

Operating Temperature °C -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85

Reverse Voltage V 20 20 3 2 2

Reverse Current mA 10 10 10 10 10

Forward Current mA 10 10 10 10 10

Power Dissipation mW 100 100 50 50 50

GAP500 GAP1000 GAP2000 GAP3000 GAP5000

Active Diameter (mm.) 0.5 1.0 2.0 3.0 5.0

Responsivity @ 850nm 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) 0.10 (0.20)

A/W min. (typ.)1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)

1550nm 0.95 0.95 0.95 0.95 0.95

4/03

Electrical Characteristics @ 25

GAP 500 GAP 1000

GAP 2000 GAP 3000

GAP 5000

GPD Optoelectronics Corp.

Dark Current vs Reverse Bias

02 4 6 8 10 12 14 16

Bias Voltage (-V)

0.01

0.1

100

Current (nA)

GAP1000

GAP500

Capacitance vs Voltage

01 2 3 4 5 6 7 8 910

Reverse Voltage

100

200

300

400

500

600

Capacitance (pF)

GAP2000

GAP3000

Effect of Temperature on Responsivity

800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800

Wavelength (nm)

1.00E-03

1.00E-02

1.00E-01

1.00E+00

Responsivity (A/W)

25 C

80 C

-35 C

Capacitance vs Voltage

0 1 2 3 4 5 6 7 8 910

Reverse Voltage

100

Capacitance (pF)

GAP1000

GAP500

Shunt Resistance vs. 1000/T(K)

Temperature (C)

2.6 2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4

1000/T(K)

1.00E+05

1.00E+06

1.00E+07

1.00E+08

1.00E+09

1.00E+10

1.00E+11

Shunt Resistance (Ohms)

255075 -25

GAP500

GAP1000

GAP2000

75 50 25 0 -25

4/03

Extended short-wavelength response also available.

GAP 500 GAP 1000

GAP 2000 GAP 3000

GAP 5000

GPD Optoelectronics Corp.

Package Outlines

GPD Optoelectronics Corp.

7 Manor Parkway

Salem, NH 03079-2842

Tel: (603) 894-6865 Fax: (603) 894-6866

E-mail address: sales@gpd-ir.com

Web Site:http://www.gpd-ir.com

Dimensions in mm (in.) Many other packages (including lensed packages) available.

GPD Optoelectronics Corp. (formerly Germanium Power Devices) has been a manufacturer of

power transistors and diodes since 1973 and a manufacturer of infrared photodetectors for more than ten

years . GPD offers Germanium p-n, p-i-n, APD and InGaAs p-i-n high-speed and large area photodetec-

tors for infrared radiation detection and telecommunications applications. GPD can offer you a photo-

detector that meets your technical and cost requirements.

GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are sub-

jected to Bellcore testing requirements(TA-NWT-00093), MIL-STD-883 test methods and/or customer

specifications.

4/03

TO-46 (modified) TO-5

GAP 500 GAP 1000

GAP 2000 GAP 3000

GAP 5000