BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 * Silicon Epitaxial Planar Diode * Fast switching dual diode with common anode * This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type designation BAV99, and a dual common cathode with type designation BAV70. 3 1 1 3 2 17033 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAW56 Ordering code BAW56-GS18 or BAW56-GS08 Marking Remarks JD Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage = Working peak reverse voltage = DC Blocking voltage Unit 70 V IF 250 mA IFSM 2.0 A tp = 1 ms IFSM 1.0 A tp = 1 s IFSM 0.5 A Power dissipation 1) Value tp = 1 s Forward current ( continous) Non repetitive peak forward current Symbol VR, VRM Pdiss 350 1) mW Device on fiberglass substrate, see layout Document Number 85549 Rev. 1.6, 09-Jul-04 www.vishay.com 1 BAW56 VISHAY Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 430 C/W Thermal resistance junction to ambiant air Junction temperature TJ 150 C Storage temperature range TS - 65 to + 150 C 1) Device on fiberglass substrate, see layout Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Max Unit IF = 1 mA Test condition Symbol VF Min Typ. 0.715 V IF = 10 mA VF 0.855 V IF = 50 mA VF 1.0 V IF = 150 mA VF 1.25 V VR = 70 V IR 2.5 A VR = 70 V, Tj = 150 C IR 100 A VR = 25 V, Tj = 150 C IR 30 A Diode capacitance VF = VR = 0, f = 1 MHz Ctot 2 pF Reverse recovery time IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 trr 6 ns Typical Characteristics (Tamb = 25 C unless otherwise specified) IF - Forward Current ( mA ) 1000 100 T j = 100 C 10 125 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 14356 Figure 1. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 85549 Rev. 1.6, 09-Jul-04 BAW56 VISHAY Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85549 Rev. 1.6, 09-Jul-04 www.vishay.com 3 BAW56 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85549 Rev. 1.6, 09-Jul-04