2N4036 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0. 305) 8.51 (0. 335) 4.19 (0. 165) 4.95 (0. 195) 2. 54 (0.100) 2 1 12.70 (0.500) min. DESCRIPTION 5.08 (0. 200) typ. 0. 89 m a x . (0. 035) 7.75 (0. 305) 8.51 (0. 335) dia. 3 0.66 (0. 026) 1.14 (0. 045) The 2N4036 is a silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. 0.71 (0. 028) 0.86 (0. 034) 45 TO-39 Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25c unless otherwise stated 2N4036 VCBO Collector - Base Voltage (IE = 0) -90V VCEX Collector - Emitter Voltage (VBE = 1.5V) -85V VEBO Emitter - Base Voltage (IC = 0) -6V IC Continuous Collector Current -1A IB Base Current 0.5 Ptot Total Dissipation at Tamb 25C 1 Tcase 25C 7 Tstg Operating and Storage Temperature Range Tj Junction temperature Semelab plc. -65 to +200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk 200C Prelim. 7/98 2N4036 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 25 C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions ICBO Collector Cut Off Current VCB = -60V ICEO Collector Cut Off Current IEBO Min. Typ. Max. Unit -20 nA VCE = -30V IE = 0 IB = 0 -0.5 A Emitter Cut Off Current VEB = -5V IC = 0 -20 nA VCE(sat) Collector Emitter Saturation Voltage IC = -150mA IB = -15mAV -0.65 V VBE Base Emitter Saturation Voltage IC = -150mA VCE = -10V -1.1 V V(BR)CBO Collector Base Breakdown Voltage IC = -100A -90 V V(BR)CEX Collector Emitter Breakdown Voltage IC = -10mA IE = 0 VBE = 1.5V -85 V V(BR)CER Collector Emitter Breakdown Voltage IC = -10mA -85 V V(BR)CEO Collector Emitter Breakdown Voltage IC = -10mA RBE = 200 IB = 0 -65 V V(BR)EBO Emitter Base Breakdown Voltage IC = 0 IE = -100A -7 IC = -0.1mA VCE = -10V 20 IC = -150mA VCE = -10V 40 IC = -500mA VCE = -10V 20 IC = -50mA VCE = -10v hFE DC Current Gain fT Transistiion Frequency CEBO Emitter Base Capacitance CCBO Collector Base Capacitance ton Turn On Time toff Turn Off Time f = 20MHz IE = 0 VCB = -0.5V VCB = -10V f = 1MHz IC = -150mA VCC = -30V IB1 = -15mA IC = -150mA MHz 60 f = 1MHz IE = 0 140 VCC = -30V IB1=-IB2 = 15mA 90 pF 30 pF 110 ns 700 ns * Pulse test tp = 300s , = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 7/98