Document Number: 83613 www.vishay.com
Revision 17-August-01
2–104
FEATURES
• High Current Transfer Ratio, 75% to 450%
• Minimum Current Transfer Ratio, 10%
• Guaranteed at
I
F
=1.0mA
• High Collector-Emitter Voltage, BV
CEO
=70V
• Long Term Stability
• Industry Standard DIP Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°
C....................... 100 mW
Derate Linearly from 25
°
C ................. 1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
........................................................ 70 V
Emitter-Collector Breakdown Voltage,
BV
ECO
....................................................... 7.0 V
Collector-Base Breakdown Voltage,
BV
CBO
....................................................... 70 V
Power Dissipation.................................... 200 mW
Derate Linearly from 25
°
C ................... 2.6 mW/
°
C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
RMS
Total Package Dissipation at 25
°
C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25
°
C ................... 3.3 mW/
°
C
Creepage ...............................................
≥
7.0 min
Clearance...............................................
≥
7.0 min
Storage Temperature ................ –55
°
C to +150
°
C
Operating Temperature ............ –55
°
C to +100
°
C
Lead Soldering Time at 260
°
C ..................10 sec.
V
DE
Characteristics
0
°
C to 70
°
C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
V
F
— 1.2 1.5 V
I
F
=20 mA
Forward Voltage — 1.0 1.2
I
F
=1.0 mA
Breakdown Voltage 6.0 20 —
I
R
=10
µ
A
Reverse Current
I
R
— 0.1 10
µ
A
V
R
=6.0 V
T
A
=25°C
Detector
Transistor Gain HFE 100 200 — —
V
CE
=5.0 V
I
C
=100
µ
A
Breakdown Voltage
Collector-Emitter
BV
CEO
70——V
I
C
=100
µ
A
Breakdown Voltage
Emitter-Collector
BV
ECO
7.0 10 —
I
E
=100
µ
A
Breakdown Voltage
Collector-Base
BV
CBO
70 90 —
I
C
=10
µ
A
Leakage Current
Collector-Emitter
I
CEO
— 5.0 50 nA
V
CE
=10 V,
T
A
=25°C
Package
Base Current Transfer
Ratio
CTRCB 0.15 — — %
I
F
=10 mA
V
CB
=10 V
V
CEsat
— — 0.4 V
I
F
=10 mA
I
C
=2.0 mA
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
75
125
225
100
200
300
150
250
450
%
I
F
=10 mA,
V
CE
=10 V
DC Current Transfer Ratio
IL201
IL202
IL203
CTR
10
30
50
——%
I
F
=1.0 mA,
V
CE
=10 V
.010 (.25)
typ.
.114 (2.90)
.130 (3.0)
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
12
3
18°
3°–9°
.300–.347
(7.62–8.81)
4°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
IL201/IL202/IL203
Phototransistor
Optocoupler