HEF40106BT-Q100 - NXP - Datasheet.Live

1. General description

The HEF40106B-Q100 provides six inverting buffers. Each input has a Schmitt trigger

circuit. The inverting buffer switches at different points for positive-going and

negative-going signals. The difference between the positive voltage (VT+) and the

negative voltage (VT) is defined as hysteresis voltage (VH).

The HEF40106B-Q100 may be used for enhanced noise immunity or to “square up”

slowly changing waveforms.

It operates over a recommended VDD power supply range of 3 V to 15 V referenced to V SS

(usually ground). Unused inputs must be connected to VDD, VSS, or another input.

This product has been qualified to the Automotive Electronics Council (AEC) standard

Q100 (Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

Automotive product qualification in accordance with AEC-Q100 (Grade 1)

Specified from 40 C to +85 C and from 40 C to +125 C

Schmitt trigger input discrimination

Fully static operation

5 V, 10 V, and 15 V parametric ratings

Standardized symmetrical output characteristics

ESD protection:

MIL-STD-833, method 3015 exceeds 2000 V

HBM JESD22-A114F exceeds 2000 V

MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

Complies with JEDEC standard JESD 13-B

3. Applications

Wave and pulse shapers

Astable multivibrators

Monostable multivibrators

HEF40106B-Q100

Hex inverting Schmitt trigger

Rev. 1 — 7 August 2012 Product data sheet

Product data sheet Rev. 1 — 7 August 2012 2 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

4. Ordering information

5. Functional diagram

6. Pinning information

6.1 Pinning

Table 1. Ordering information

All types operate from 40 C to +125 C

Type number Package

Name Description Version

HEF40106BT-Q100 SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

HEF40106BTT -Q100 TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1

Fig 1. Functional diagram Fig 2. Logic diagram (one inverting buffer)

mna204

1A 1Y

2A 2Y

3A 3Y

4A 4Y

5A 5Y

11 10

6A 6Y

13 12

mna025

Fig 3. Pin configuration

+()%4



9''



$



<



$



<



$

<

DDD



























Product data sheet Rev. 1 — 7 August 2012 3 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

6.2 Pin description

7. Functional description

[1] H = HIGH voltage level; L = LOW voltage level.

8. Limiting values

[1] For SO14 packages: above Tamb = 70 C, Ptot derates linearly with 8 mW/K.

[2] For TSSOP14 packages: above Tamb = 60 C, Ptot derates linearly with 5.5 mW/K.

Table 2. Pin description

Symbol Pin Description

1A to 6A 1, 3, 5, 9, 11, 13 input

1Y to 6Y 2, 4, 6, 8, 10, 12 output

VDD 14 supply voltage

VSS 7 ground (0 V)

Table 3. Function table[1]

Input Output

nA nY

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).

Symbol Parameter Conditions Min Max Unit

VDD supply voltage 0.5 +18 V

IIK input clamping current VI<0.5 V or VI>V

DD + 0.5 V - 10 mA

VIinput voltage 0.5 VDD + 0.5 V

IOK output clamping curre nt VO<0.5 V or VO>V

DD + 0.5 V - 10 mA

II/O input/output current - 10 mA

IDD supply current - 50 mA

Tstg storage temperature 65 +150 C

Tamb ambient temperature 40 +125 C

Ptot total power dissipation Tamb = 40 C to +125 C

SO14 [1] -500mW

TSSOP14 [2] -500mW

P power dissipation per output - 100 mW

Product data sheet Rev. 1 — 7 August 2012 4 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

9. Recommended operating conditions

10. Static characteristics

Table 5. Recommended operating con ditions

Symbol Parameter Conditions Min Max Unit

VDD supply voltage 3 15 V

VIinput voltage 0 VDD V

Tamb ambient temperature in free air 40 +125 C

Table 6. Static characteristics

VSS = 0 V; VI=V

SS or VDD; unless otherwise specified.

Symbol Parameter Conditions VDD Tamb = 40 C Tamb = +25 C Tamb = +85 C Tamb = +125 CUnit

Min Max Min Max Min Max Min Max

VOH HIGH-level

output voltage IO < 1 A 5 V 4.95 - 4.95 - 4.95 - 4.95 - V

10 V 9.95 - 9.95 - 9.95 - 9.95 - V

15 V 14.95 - 14.95 - 14.95 - 14.95 - V

VOL LOW-level

output voltage IO < 1 A 5 V - 0.05 - 0.05 - 0.05 - 0.05 V

10 V - 0.05 - 0.05 - 0.05 - 0.05 V

15 V - 0.05 - 0.05 - 0.05 - 0.05 V

IOH HIGH-level

output cur r en t VO = 2.5 V 5 V - 1.7 - 1.4 - 1.1 - 1.1 mA

VO = 4.6 V 5 V - 0.64 - 0.5 - 0.36 - 0.36 mA

VO = 9.5 V 10 V - 1.6 - 1.3 - 0.9 - 0.9 mA

VO = 13.5 V 15 V - 4.2 - 3.4 - 2.4 - 2.4 mA

IOL LOW-level

output cur r en t VO = 0.4 V 5 V 0.64 - 0.5 - 0.36 - 0 .3 6 - mA

VO = 0.5 V 10 V 1.6 - 1.3 - 0.9 - 0.9 - mA

VO = 1.5 V 15 V 4.2 - 3.4 - 2.4 - 2.4 - mA

IIinput leakage

current 15 V - 0.1 - 0.1 - 1.0 - 1.0 A

IDD supply current all v alid input

combinations;

IO=0A

5 V - 0.25 - 0.25 - 7.5 - 7.5 A

10 V - 0.5 - 0.5 - 15.0 - 15.0 A

15 V - 1.0 - 1.0 - 30.0 - 30.0 A

CIinput

capacitance ---7.5-- - -pF

Product data sheet Rev. 1 — 7 August 2012 5 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

11. Dynamic characteristics

[1] Typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (CL in pF).

Table 7. Dynamic characteristics

Tamb = 25 C; CL = 50 pF; tr = tf  20 ns; wave forms see Figure 4; test circuit see Figure 5; unless otherwise specified.

Symbol Parameter Conditions VDD Extrapolation formula[1] Min Typ Max Unit

tPHL HIGH to LOW

propagation delay nA or nB to nY 5 V 63 ns + (0.55 ns/pF)CL- 90 180 ns

10 V 29 ns + (0.2 3 ns/pF)CL-3570ns

15 V 22 ns + (0.1 6 ns/pF)CL-3060ns

tPLH LOW to HIGH

propagation delay nA or nB to nY 5 V 58 ns + (0.55 ns/pF)CL- 75 150 ns

10 V 29 ns + (0.2 3 ns/pF)CL-3570ns

15 V 22 ns + (0.1 6 ns/pF)CL-3060ns

tTHL HIGH to LOW output

transition time nY to LOW 5 V 10 ns + (1.00 ns/pF)CL- 60 120 ns

10 V 9 ns + (0.42 ns/pF)C L-3060ns

15 V 6 ns + (0.28 ns/pF)C L-2040ns

tTLH LOW to HIGH output

transition time nA or nB to

HIGH 5 V 10 ns + (1.00 ns/p F)CL- 60 120 ns

10 V 9 ns + (0.42 ns/pF)C L-3060ns

15 V 6 ns + (0.28 ns/pF)C L-2040ns

Table 8. Dynamic power dissipation

VSS = 0 V; tr = tf  20 ns; Tamb = 25 C.

Symbol Parameter VDD Typical formula where:

PDdynamic power

dissipation 5V P

D = 2300  fi + (fo  CL)  VDD2 (W) fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

(fo  CL) = sum of the outputs;

VDD = supply voltage in V.

10 V PD = 9000  fi + (fo  CL)  VDD2 (W)

15 V PD = 20000  fi + (fo  CL)  VDD2 (W)

Product data sheet Rev. 1 — 7 August 2012 6 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

12. Waveforms

Measurement points are given in Table 9.

Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.

tr, tf = input rise and fall times.

Fig 4. Propa ga tion delay and outpu t transition time

001aag197

input

output

tPLH

tPHL

0 V

VOH

VOL tTLH

tTHL

90 %

10 %

90 %

trtf

Table 9. Measur emen t points

Supply voltage Input Output

VDD VMVM

5 V to 15 V 0.5VDD 0.5VDD

Test data given in Table 10.

Definitions for test circuit:

DUT = Device Under Test.

CL= load capacitance including jig and probe capacitance.

RT= termination resistance should be equal to the output impedance Zo of the pulse generator.

Fig 5. Test circuit

VDD

VIVO

001aag182

DUT

Table 10 . Test data

Supply voltage Input Load

VDD VItr, tfCL

5 V to 15 V VSS or VDD 20 ns 50 pF

Product data sheet Rev. 1 — 7 August 2012 7 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

13. Transfer characteristics

[1] All typical values are at Tamb =25C.

Table 11. Transfer characteristics

VSS =0V; see Figure 6 and Figure 7.

Symbol Parameter Conditions VDD Tamb = 40 C to +85 C Tamb = 40 C

to +125 CUnit

Min Typ[1] Max Min Max

VT+ positive-going threshold voltage 5 V 2.0 3.0 3.5 2.0 3.5 V

10 V 3.7 5.8 7.0 3.7 7.0 V

15 V 4.9 8.3 11.0 4.9 11.0 V

VTnegative-going threshold voltage 5 V 1.5 2.2 3.0 1.5 3.0 V

10 V 3.0 4.5 6.3 3.0 6.3 V

15 V 4.0 6.5 10.1 4.0 10.1 V

VHhysteresis voltage 5 V 0.5 0.8 - 0.5 - V

10 V 0.7 1.3 - 0.7 - V

15 V 0.9 1.8 - 0.9 - V

Fig 6. Tr ansfer characteristic Fig 7. Waveforms showing definition of VT+ and VT

(between limits at 30 % and 70 %) and VH

001aag107

VHVT+

VT−

001aag108

VIVH

VT+

VT−

Product data sheet Rev. 1 — 7 August 2012 8 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

a. VDD = 5 V; Tamb = 25 Cb.V

DD = 10 V; Tamb = 25 C

c. VDD = 15 V; Tamb = 25 C

Fig 8. Typical drain current as a function of input

VI (V)

054231

001aal181

100

(μA)

VI (V)

0108462

001aal182

400

600

200

800

1000

(μA)

VI (V)

020168124

001aal183

800

1200

400

1600

2000

(μA)

Product data sheet Rev. 1 — 7 August 2012 9 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

14. Application information

Some examples of applications for the HEF40106B-Q100 are:

•Wave and pulse shapers

•Astable multivibrators

•Monostable multivibrators

If a Schmitt trigger is driven via a high-impedance (R > 1 k), then it is necessary to

incorporate a capacitor C with a value of ; otherwise oscillation can occur

on the edges of a pulse.

Cp is the external parasitic capacitance be tween inp uts and output; the value depends on

the circuit board layout.

Tamb = 25 C.

Fig 9. Typical switching le vels as a function of supply voltage

001aal184

VDD (V)

2.5 17.512.57.5

(V)

Fig 10. Astable multivibrator Fig 11. Schmitt trigg e r dr iv en via a

high-impedance input

mna035

001aal185

------ VDD VSS

–

------------------------->

Product data sheet Rev. 1 — 7 August 2012 10 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

15. Package outline

Fig 12. Package outline SOT108-1 (SO14)

UNIT A

max. A1A2A3bpcD

(1) E(1) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10 1.45

1.25 0.25 0.49

0.36 0.25

0.19 8.75

8.55 4.0

3.8 1.27 6.2

5.8 0.7

0.6 0.7

0.3 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

1.0

0.4

SOT108-1

detail X

vMA

(A )

076E06 MS-012

pin 1 index

0.069 0.010

0.004 0.057

0.049 0.01 0.019

0.014 0.0100

0.0075 0.35

0.34 0.16

0.15 0.05

1.05

0.041

0.244

0.228 0.028

0.024 0.028

0.012

0.01

0.25

0.01 0.004

0.039

0.016

99-12-27

03-02-19

0 2.5 5 mm

scale

SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

Product data sheet Rev. 1 — 7 August 2012 11 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

Fig 13. Package outline SOT402-1 (TSSOP14)

UNIT A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.15

0.05 0.95

0.80 0.30

0.19 0.2

0.1 5.1

4.9 4.5

4.3 0.65 6.6

6.2 0.4

0.3 0.72

0.38 8

0.13 0.10.21

DIMENSIONS (mm are the original dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.

0.75

0.50

SOT402-1 MO-153 99-12-27

03-02-18

0.25

14 8

detail X

(A )

vMA

0 2.5 5 mm

scale

TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1

max.

1.1

pin 1 index

Product data sheet Rev. 1 — 7 August 2012 12 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

16. Abbreviations

17. Revision history

Table 12 . Abbreviations

Acronym Description

HBM Human Body Model

ESD ElectroStatic Discharge

MM Machine Model

MIL Military

Table 13. Revision history

Document ID Release date Data sheet status Ch ange notice Supersedes

HEF40106B_Q100 v.1 20120807 Product data sheet - -

Product data sheet Rev. 1 — 7 August 2012 13 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

18. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descri bed in this d ocument m ay have cha nged since thi s docume nt was publish ed and ma y diffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

18.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

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full information. For detailed and full information see the relevant full data

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Applications — Applications that are described herein for any of these

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 7 August 2012 14 of 15

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

No offer to sell or license — Nothing in this document may be interpret ed or

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Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

19. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors HEF40106B-Q100

Hex inverting Schmitt trigger

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 August 2012

Document identifier : HE F401 06 B _Q1 00

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

20. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 3

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

9 Recommended operating conditions. . . . . . . . 4

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

13 Transfer characteristics . . . . . . . . . . . . . . . . . . 7

14 Application information. . . . . . . . . . . . . . . . . . . 9

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

16 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12

17 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

18.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

18.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

18.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

19 Contact information. . . . . . . . . . . . . . . . . . . . . 14

20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15