MOTOROLA SC {DIODES/OPTO+ L2E D J) e3e725s cova o ff TOl-15 MOTOROLA MR500 MR501 m= SEMICONDUCTOR Samm) = MIR5O2 MIR504 | m TECHNICAL DATA MRS506 MR508 MR510 Designers Data Sheet: * MINIATURE SIZE, AXIAL LEAD MOUNTED STANDARD RECOVERY POWER RECTIFIERS STANDARD RECOVERY POWER RECTIFIERS . .. designed for use in power supplies and other applications having need of a device with the following features: 50-1000 VOLTS 3 AMPERE High Current to Small Size High Surge Current Capability Low Forward Voltage Drop Economical Plastic Package Available in Volume Quantities CASE 267-03 PLASTIC Designer's Data for Worst Case Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented. Limit curves representing boundaries on device character- istics are given to facilitate worst case" design. MAXIMUM RATINGS Rating Symbol | MASOO | MRSO1 | MR502/] MRSO4 | MRS5O6 | MR5O8 | MRS10/ Unit Peak Repetitive Reverse Voltage VRRM Volts Working Peak Reverse Voltage VAWM 50 100 200 400 600 800 1000 OC Blocking Voltage Va Non-Repatitive Peak Reverse Voltage VRSM 75 150 250 450 660 850 1050 | Volts Average Rectifiad Forward Current lo Amp {Single phase resistive load, Tz = 95C, 3.0 as PC Board Mounting) (1) (EIA Standard Conditions L = 1/32", 8.0 =| Tr = 85C) Non-Repatitive Peak Surge Current lesa 100 Amp {surge applied at rated load conditions) (one cycle) Operating and Storage Junction TiT1stg <____ -65 to +175 ________- C Temperature Range (2) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Rata 28 ciw (Recommended Printed Circuit Board MECHANICAL CHARACTERISTICS Mounting, See Note 2}. ELECTRICAL CHARACTERISTICS Case: Transfer Molded Plastic Characteristic symbot| Min Typ Max Unit Finish: External Leads are Plated, ' ; dVol re Volts Leads are readily Solderable nstantaneous Forward Voltage VE ol tae . lig = 9.4 Amp, Ty = 175C) _ 09 1.0 Polarity: Indicated by Cathode Band {ip = 9.4 Amp, Ty = 25C) - 1.04 Wd Weight: 1.1 Grams (Approximately) Reverse Current (rated de voltage) (3) IR BA Maximum Lead Temperature for Ty = 25C - 0.1 5.0 Soldering Purposes: Ty = 100C - 28 25 300C, 1/8" from case for 10s at 5.0 Ib. tension (1} Derate for reverse power dissipation. {2) Derate as shown in Figure 1. (3) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%. : 3-167MOTOROLA SC {DIODES/OPTO} TO). fe Le D Bh G3b7255 Oozses 2 f + M500, MR501, MR502, MR504, MR506, MR508, MR510 NOTE 1: DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered whan operating this rectifier at reverse voltages above 200 volts. Proper derating may be accomplished by use of equation (1): TAtmax) = Timax) ResaPriav) ResaPRiav) mM where TA(mex} = Maximum allowsble ambiant temperature T.3(max) = Maximum allowable junction temperature (175C or the temperature at which ther- mal runaway occurs, whichever is lowest. ) PeE(ay) * Average forward power dissipation PR(AV) * Average reverse power dissipation ReJa = Junction-to-ambient thermal resistance Figure 1 parmits easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figure solves for a reference temperature as determined by equation (2): Tr = Tdtmax) ResaPRIAV) (2) Substituting equation (2) into equation (1) yields: Tatmax) = TR ResaPriav) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs orwhere Ty = 175C, when forward power is zero. The transition from one boundary condition to the ather is evident on the curves of Figure f as a difference in the rate of change of the slope in the vicinity of 165C. The data of Figure 1 is based upon de conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent de voltage to use for conservative design; f.6.: Vatequiv) = Vin(PK) x F (4) The Factor F is derived by considering the properties of the various rectifier circuits and the rectifiers reverse characteristics. Example: Find Ta(mex) for MAS10 operated in a 400 Voltde supply using a full wave center-tapped circuit with capacitive filter such that Ipc = 6.0 4, lle{ay) 2 3.0 A), lepK)/ltay) = 19, Input Voltage = 283 Virms) {line to center tap), Aga = 28C/W. Step 1: Find Vafequiv). Read F = 1.11 from Table 1 VRequiv) = 1.41)(283)(1.11) = 444 V Step 2: Find Ty from Figure t. Read TR = 167C @ VR = 444 V & Roja = 28CW. Step 3: Find Pe(ay) from Figure 8. Read Pecay) = 4 W 'PK e =10& le(ay) =3.0A lav (AV) Step 4: Find Taimax) from equation (3). Ta(max) = 167-(28) (4) = 55C. TABLE 1 VALUES FOR FACTOR F een 13 Full Wave Circuit Half Wave Full Wave, Bridge Center-Tapped*t Load Racict: Canacitives | Resist: Capaciti Teal c Sine Wave 0.45 1,11 0.45 0.55 090 1.11 Square Wave 0.61 1,22 0.61 0.61 1.22 1.22 *Note that Va(pK) 2 ViniPK} FIGURE 1 MAXIMUM REFERENCE TEMPERATURE Tr, REFERENCE TEMPERATURE (C) Vr, OC REVERSE VOLTAGE (VOLTS) tUse tine'to center tap voltage for Vin. FIGURE 2 MAXIMUM SURGE CAPABILITY g Vram MAY BE BETWEEN EACH CYCLE OF SUAGE. Ty NOTED Ty PRIOR TO SURGE s gsm. PEAK HALF WAVE CURRENT (AMP) 7 NUMBER OF CYELES 3-168z . - MOTOROLA SC {DIODES/OPTO} T-Qp-)& 22E D i 6367255 0079695 4 i MR500, MR501, MR502, MR504, MR506, MR508, MR510 . CURRENT DERATING (Reverse Power Loss Neglected} FIGURE 3 PC BOARD MOUNTING FIGURE 6 MAXIMUM FORWARD VOLTAGE 200 2000 10K) AV) 70 50 IF(AV), AVERAGE FORWARD CURRENT (AMP) Wr. TA, AMBIENT TEMPERATURE (C) > S FIGURE 4 SEVERAL LEAD LENGTHS @ 2 = 1/32" RESISTIVE LOAD BOTH LEADS TO SINK WITH LENGTHS AS if, INSTANTANEQUS FORWARD CURRENT (AMP) 0.3 IF(AV). AVERAGE FORWARD CURRENT (AMP) 02 40 60 80 100 120 140 160 180 0.4 2.0 24 28 3.2 Ty, LEAD TEMPERATURE (C) ve, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) eo FIGURE 7 FORWARD VOLTAGE TEMPERATURE FIGURES 1/8" LEAD LENGTH COEFFICIENT 46.0 =< (RESISTIVE LOAD) WAVE e To E 43.0 SINK WITH EQUAL = LENGTHS +20 Ss i it uw Qa a 2 3 \F(AV). AVERAGE FORWARD CURRENT (AMP) 60 80 160 120 140 160 180 0.2 0.8 5.0 60 200 Ti, LEAD TEMPERATURE (C} ig, INSTANTANEOUS FOAWARD CUARENT (AMP) 3-169MOTOROLA SC {DIODES/OPTO} P.Oy. yes L2E D Bp 6367255 CO7ILAE & i MR500, MR501, MR502, MR504, MR506, MR508, MR510 FIGURE 8 FORWARD POWER DISSIPATION FIGURE 9 TYPICAL REVERSE CURRENT 10 100 MPK) = 100% VOLT. 50% RATED VOL 20% ~ Oo =a PF(AV). AVERAGE FORWARD POWER DISSIPATION (WATTS) Ig, REVERSE CURRENT (uA} np Ty = 17696 0 1.0 20 3.0 40 5.0 7.0 8.0 IF(AV}. AVERAGE FORWARD CURRENT (AMP) Ty, JUNCTION TEMPERATURE (C} THERMAL CHARACTERISTICS FIGURE 10 THERMAL RESPONSE SS ee Pak Fok OUTY CYCLE = tg/t1 a= LEAD LENGTH = 1/4 OST al ty PEAK POWER, Ppk, is peak of an TIME equivalent square power pulse. aT a@ 8 bu - SX 0.2L aty_= Pox Ret [0+ (1-D)+ ty + tp) + tp) rit} < NO. = Poe -D)- - ee ae Te tpheripiontt Ea The the (ead should be measured |_| zz abet a LT using a thermocouple placed an the lead as closa as eo Ol ATL = the increase in junction temperature above the possible to the tie point. The thermal mass con- a= f- lead temperature. . | racted to the tie point is normally farge enough =] g w (d= normalized value of transient thermal so that it will not significantly respond to heat 7 = 3 0.05 [at time, t, ie.: 4 surges d in the diods as a result of pulsed | EER og. tit l= ized value of paratis steady-stat iti achieved. eg transient thermal resistance LP Using the measured value of TE, the junction tam- 1 c= g.gg}at time ty + tp, etc, Let psrature may be determined by: | pig Hi ateaT, HH ool _L+T TI Liman [HT ya TT 0.2 05 1.0 2.0 5.0 10 20 50 00 200 500 10k 20k 5.0k 10k 20k t, TIME (ms} NOTE 2 AMBIENT MOUNTING DATA Data shown for thermal resistance junction-to-amblant (Agya) for the mauntings shown Is to be used a typical guideline values FIGURE 11 STEADY-STATE THERMAL RESISTANCE for pratiminary engineering oF In case the tle paint tempereturce cannot be messured. LEAO TO HEAT SINK 7 TYPICAL VALUES FOR RosaiN STILL AIR MOUNTING INSIGNIFICANT HEAT FLOW OTHER METHOD Pola a TYPICAL Se z= = 8 a eo - MOUNTING METHOD 1 2 3 PG, Board Where Available Copper 2 2 Surface area is small, MOUNTING METHOD 3 23 t-| 4 FG P.C. Boerd with az TO ase 1-1/2" x 1-1/2" Copper Surface 33 SINK, EQUAL LLLP LENGTH MOUNTING METHOD 2 Vector Push-in Terminals T-28 L, LEAD LENGTH (INCHES) et] iq J @oard Ground Plane 3-170MOTOROLA SC {DIODES/OPTOFT. Cf-j5 12E D MP b3b7255 o079L97 3 i MR500, MR501, MR502, MR504, MR506, MR508, MR510 FIGURE 12 APPROXIMATE THERMAL CIRCUIT MODEL THERMAL CIRCUIT MODEL For Heat Conduction Through the Leeds! { vi ) Ta = Ambient Temperatura Agg= Thermal Resistance, Heat WA Weare WA We WA Sink to Ambient Agsa RELA # Raa ReJK ReLk Resk Ty = Lead Temperature iT ied oan Lead to Heat Sin! A To = Case Temperature Aggy = Thermal Resistance, func- Pp Ta _ ton to Case = TAA AK = Ty = Junction Temperature = Pp = Total Power Dissipation = PetPR T Pp = Forward Power Dissipation TLA TCA Tt Tex TLk PR = Fleverse Pawar Dissipation {Subscripts A end K refer to anode and cathode sides respectively.) Values for thermat resistance components sre Ag, = 46C/W/IN. Typlcally and 48C/W/IN Maximum. Figs = 10%C/W Typically and 18CAV Maximum. The maximum (ead temperature may be found as follows: Use of the ebove model permits Junction to lead thermal Te * Tyimax) - 4 Te ratiutance for any mounting configuration to be found. Fora where aT * Rose given total fead length, Jowert values occur when one side of the rectifier is brought as clase es possible to the heatsink. Terms in the modal signify: TYPICAL DYNAMIC CHARACTERISTICS (Ty = 25C) FIGURE 13 FORWARD RECOVERY TIME FIGURE 14 REVERSE RECOVERY TIME x a tfr, FORWARD RECOVERY TIME (us) trr, REVERSE RECOVERY TIME (ps) am o 2.0 / {Overshoot not renter I = 200 mA} ig, FORWARD CURRENT (AMP) ta/lp, DRIVE CURRENT RATIO FIGURE 15 RECTIFICATION WAVEFORM EFFICIENCY FIGURE 16 JUNCTION CAPACITANCE cs 1.OkHz VALUE e -~ eo a z wi 3 2 =z < a 5 o a iL < bh i 3 G REPETITION FREQUENCY (kHz) Var, REVERSE VOLTAGE (VOLTS) | 3-171MOTOROLA SC {DIODES/OPTO} TeOl-G22E > Bp 5367255 Cozseas Tt fl MR500, MR501, MR502, MR504, MR506, MR508, MR510 r. RECTIFIER EFFICIENCY NOTE FIGURE 17 SINGLE-PHASE HALF-WAVE RECTIFIER CIRCUIT Rs The rectification efficiency factor ao shown in Figure 15 was calculated using the formula: V2olde) Pride) Rt V2 olde) = = ay 100% (1) V2 glac) + V4 o{de) RAL For a sine wave input Vy, sin (wt) to the diode, assumed lassiess, the maximum theoretical efficiency factor becomes: Mem a? 4 _ sine) = 100% = - 100% = 40.6% (2). Vim " 4Ry y2 . m For a square wave input of _ amplitude Vp, the efficiency 2R-L factor becomes: (square) = Van + 100% = 50% (3) Re (A full wave circuit has twice these efficiencies) . As the frequency of the input signal is increased, the reverse re- covery time of the diode (Figure 14) becomes significant, resulting in an increasing ac voltage component across Ry which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor a, as shown on Figure 15. It should be emphasized that Figure 15 shows waveform efficien- cy only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of Vg with a true rms ac voltmeter and the de component with a de voltmeter. The data was used in Equation 1 to obtain points for the figure. OUTLINE DIMENSIONS yr 4 fT fh NOTES: ANSI Y14.5, 1982. 1. DIMENSIONING & TOLERANCING PER 2. CONTROLLING DIMENSION: INCH. CASE 267-03 PLASTIC et STYLE 1: PIN 1. CATHODE 2. ANODE 3-172