LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network 3 consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating 1 2 CASE 419, STYLE 3 them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package SOT-323 (SC-70) which is designed for low power surface mount applications. PIN 2 PIN 1 BASE * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * The SC-70/SOT-323 package can be soldered using wave or reflow. COLLECTOR (OUTPUT) R1 (INPUT) R2 PIN 3 EMITTER (GROUND) MARKINGDIAGRAM The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. 6X * Available in 8 mm embossed tape and reel M Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel. 6X =Specific Device Code X M =(See Marking Table) =Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page2 of this data sheet. MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Total Device Dissipation PD 202 (Note 1) TA = 25C 310 (Note 2) Derate above 25C 1.6 (Note 1) 2.5 (Note 2) Thermal Resistance - RJA 618 (Note 1) Junction-to-Ambient 403 (Note 2) Thermal Resistance - RJL 280 (Note 1) Junction-to-Lead 332 (Note 2) Junction and Storage TJ, Tstg -55 to +150 Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Unit mW C/W C/W C/W C MUN5111T1 Series-1/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping MUN5111T1 SC-70/SOT-323 6A 10 10 3000/Tape & Reel MUN5112T1 SC-70/SOT-323 6B 22 22 3000/Tape & Reel MUN5113T1 MUN5113T3 SC-70/SOT-323 6C 47 47 3000/Tape & Reel 10,000/Tape & Reel MUN5114T1 SC-70/SOT-323 6D 10 47 3000/Tape & Reel MUN5115T1 (Note 3) SC-70/SOT-323 6E 10 3000/Tape & Reel MUN5116T1 (Note 3) SC-70/SOT-323 6F 4.7 3000/Tape & Reel MUN5130T1 (Note 3) SC-70/SOT-323 6G 1.0 1.0 3000/Tape & Reel MUN5131T1 (Note 3) SC-70/SOT-323 6H 2.2 2.2 3000/Tape & Reel MUN5132T1 (Note 3) SC-70/SOT-323 6J 4.7 4.7 3000/Tape & Reel MUN5133T1 (Note 3) SC-70/SOT-323 6K 4.7 47 3000/Tape & Reel MUN5134T1 (Note 3) SC-70/SOT-323 6L 22 47 3000/Tape & Reel MUN5135T1 (Note 3) SC-70/SOT-323 6M 2.2 47 3000/Tape & Reel MUN5136T1 SC-70/SOT-323 6N 100 100 3000/Tape & Reel MUN5137T1 SC-70/SOT-323 6P 47 22 3000/Tape & Reel 3. New devices. Updated curves to follow in subsequent data sheets. MUN5111T1 Series-2/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 150 140 - - - - - - - - - - - - - - VCE(sat) - - 0.25 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 Vdc Vdc 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% MUN5111T1 Series-3/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 MUN5115T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5116T1 MUN5131T1 MUN5132T1 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 Resistor Ratio MUN5111T1/MUN5112T1/MUN5113T1/ MUN5136T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve MUN5111T1 Series-4/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5111T1 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 50 100 25C 75C TA=-25C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current MUN5111T1 Series-5/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5112T1 IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 9. Output Capacitance 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25C -25C 100 10 50 VCE = 10 V TA=-25C 10 1 0.1 0.01 0.001 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 10. Output Current versus Input Voltage VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current MUN5111T1 Series-6/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES 1 1000 IC/IB = 10 TA=-25C 25C 75C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5113T1 0 10 20 30 TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain Figure 12. VCE(sat) versus IC 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA=75C -25C 10 1 0.1 0.01 0.001 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V TA=-25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25C 0.8 100 25C 75C 10 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current MUN5111T1 Series-7/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5114T1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 140 -25C 120 100 80 60 40 20 0 80 TA=75C VCE = 10 V 160 1 2 4 6 Figure 17. VCE(sat) versus IC 100 3.5 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) TA=75C f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 Figure 19. Output Capacitance 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage +12 V 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 25C 75C TA=-25C Typical Application for PNP BRTs 1 LOAD 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source MUN5111T1 Series-8/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5132T1 1000 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 75C 0.1 25C -25C 0.01 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 75C 100 25C 10 1 35 -25C 0 20 Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 10 8 7 6 5 4 3 2 75C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 25. Output Capacitance 60 -25C 10 25C 1 0.1 0.01 0 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 26. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 9 1 0 120 40 60 80 100 IC, COLLECTOR CURRENT (mA) -25C 75C 1 25C 0.1 0 5 10 15 20 25 30 35 40 IC, OUTPUT CURRENT (mA) 45 50 Figure 27. Input Voltage versus Output Current MUN5111T1 Series-9/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75C 25C -25C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136T1 1000 75C TA = -25C 100 25C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 25C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 75C 10 TA = -25C 1 VO = 5 V 0.1 0 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 25C TA = -25C 10 1 75C 0 2 VO = 0.2 V 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 20 Figure 32. Input Voltage versus Output Current MUN5111T1 Series-10/11 LESHAN RADIO COMPANY, LTD. MUN5111T1 SERIES VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = -25C 75C 0.1 25C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137T1 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 33. Maximum Collector Voltage versus Collector Current Figure 34. DC Current Gain 100 1.4 1.0 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 75C TA = -25C 10 25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 11 Vin, INPUT VOLTAGE (VOLTS) Figure 35. Output Capacitance Figure 36. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 VO = 0.2 V TA = -25C 10 75C 25C 1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 37. Input Voltage versus Output Current MUN5111T1 Series-11/11