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AlGaAs Flip Chip PIN Diodes V4
MA4AGP907
MA4AGFCP910
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
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• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
1
Features
♦ Low Series Resistance
♦ Ultra Low Capacitance
♦ Millimeter Wave Switching & Cutoff Frequency
♦ 2 Nanosecond Switching Speed
♦ Can be Driven by a Buffered TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant
Description
M/A-COM Technology Solutions MA4AGP907 and
MA4AGFCP910 are Aluminum Gallium Arsenide
(AlGaAs) flip-chip PIN diodes. These devices are
fabricated on OMCVD epitaxial wafers using a process
optimized for high device uniformity and exceptionally
low parasitics. The end result is a diode with an
extremely low RC product, (0.1ps) and 2-3nS
switching characteristics. They are fully passivated
with silicon nitride and have an added polymer layer
for scratch protection. The protective coating prevents
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 make them ideal for RF switch and
phase shifter applications through millimeter wave
frequencies. The diodes are designed for use in
pulsed or CW applications, where single digit nS
switching speed is required. The low capacitance of
these diodes make them ideal for use in microwave
multi-throw switch assemblies, where the series
capacitance of each “off” port adversely loads the input
and affects VSWR.
DIM INCHES MM
MIN. MAX. MIN. MAX.
A 0.0260 0.0270 0.6604 0.6858
B 0.0135 0.0145 0.3429 0.3683
C 0.0065 0.0075 0.1651 0.1905
D 0.0043 0.0053 0.1092 0.1346
E 0.0068 0.0073 0.1727 0.1854
F 0.0182 0.0192 0.4623 0.4877
Parameter Absolute Maximum
Reverse Voltage MA4AGP907 -50V
MA4AGFCP910 -75V
Operating Temperature -55°C to +125°C
Storage Temperature -55°C to +150°C
Junction Temperature +175°C
Dissipated Power (RF & DC ) 50mW
Mounting Temperature +280°C for 10 seconds
C.W. Incident Power +23 dBm
Absolute Maximum Ratings TAMB = +25°C
(unless otherwise specified)
1. Gold Pads 14µM thick.
2. Yellow areas indicate ohmic gold mounting pads.
3. Dimensions A thru F are identical for both devices
Notes:
Chip Dimensions
MA4AGP907 and MA4AGFCP910