MAC16NG - LITTELFUSE - Datasheet.Live

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

■Blocking Voltage to 800 Volts

■On−State Current Rating of

16 Amperes RMS at 80°C

■Uniform Gate Trigger Currents

in Three Quadrants

■High Immunity to dv/dt − 500

V/µs minimum at 125°C

■Minimizes Snubber Networks

for Protection

■Industry Standard TO−220

Package

■High Commutating di/dt − 9.0

A/ms minimum at 125°C

■These Devices are Pb−Free

and are RoHS Compliant

Features

The MAC16 Series is designed for high performance full−wave ac

control applications where high noise immunity and high

commutating di/dt are required.

Description

Additional Information

Functional Diagram

MT 1

MT 2

Pin Out

CASE 221A

STYLE 4

Resources Accessories Samples

RoHS

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

Rating Symbol Value Unit

Peak Repetitive Off−State Voltage (Note 1)

(− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

MAC16D

MAC16M

MAC16N

VDRM,

VRRM

400

600

800

On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 16 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz, TC= 125°C) ITSM 150 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A²sec

Peak Gate Power (TC = 80°C, Pulse Width ≤ 1.0 µs) PGM 20 W

Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W

Operating Junction Temperature Range TJ-40 to +125 °C

Storage Temperature Range Tstg -40 to +150 °C

Maximum Ratings (TJ = 25°C unless otherwise noted)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Thermal Characteristics

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case (AC)

Junction−to−Ambient

RƟJC

RƟJA

2.0

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for

10 seconds TL260 °C

Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both

directions)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical

Characteristics if operated under different conditions.

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both

directions)

Characteristic Symbol Min Ty p Max Unit

Peak Repetitive Blocking Current

(VD = VDRM = VRRM; Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

- - 0.01 mA

- - 2.0

Characteristic Symbol Min Ty p Max Unit

Peak On−State Voltage (Note 2) (ITM = ±21 A Peak) VTM −1. 2 1. 6 V

Gate Trigger Current

(Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

IGT

10 16 50

mAMT2(+), G(−) 10 18 50

MT2(−), G(−) 10 22 50

Gate Trigger Voltage

(Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+)

VGT

0.5 0.75 1. 5

VMT2(+), G(−) 0.5 0.72 1. 5

MT2(−), G(−) 0.5 0.82 1. 5

Latching Current

(VD = 24 V, IG = 50 mA)

MT2(+), G(+)

VGD

− 33 50

VMT2(+), G(−) − 36 80

MT2(−), G(−) − 33 50

Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = ±150 mA)) IH– 20 50 mA

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

Voltage Current Characteristic of SCR

Quadrant Definitions for a Triac

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

VTM Maximum On State Voltage

IHHolding Current

+C urrent

+V oltage

VTM

IDR M at VDR M

on stat e

off stat e

IRR M at VRR M

Quadrant 1

Main Terminal 2 +

Quadrant 3

Main Terminal 2 VTM

All polarities are referenced to MT1.

With in phase signals (using standard AC lines) quadrants I and III are used

MT 1

(+) IGT

GA TE

(+) MT 2

RE F

MT 1

() IGT

GA TE

(+) MT 2

RE F

MT 1

(+) IGT

GA TE

() MT 2

RE F

MT 1

() IGT

GA TE

() MT 2

RE F

MT2 NEGA TIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

VItnardauQIIItnardauQ

ItnardauQIItnardauQ

IGT +I GT

Dynamic Characteristics

Characteristic Symbol Min Ty p Max Unit

Rate of Change of Commutating Current, See Figure 10. (VD = 400 V, ITM = 6.0

A, Commutating dv/dt = 24 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) CL = 10µF

LL = 40 mH

(di/dt)c 9.0 − − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 500 − − V/µs

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

Figure 4. Thermal Response

t, TIME (ms)

r(t), TRANSIEN T THERMAL RESIST ANCE (NORMALIZED)

0.1

0.01 4

10001001010.1

Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation

Figure 5. Hold Current Variation

TJ, JUNCTION TEMPERA TURE (ϒC)

IH, HOLD CURRENT (mA)

MT2 POSITIVE

MT2 NEGATIVE

Figure 3. On−State Characteristics

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

Figure 7. Gate Trigger Voltage vs Junction Temperature

Figure 6. Typical Holding Current vs Junction

Temperature

Figure 9. Critical Rate of Rise of Commutating Voltage

Figure 8. Critical Rate of Rise of Off−State Voltage

(Exponential)

TJ, JUNCTION TEMPERA TURE (ϒC)

VGT, GATE TRIGGER VOLTAGE (VOLT)

0.5

VD = 12 V

RL = 100

TJ, JUNCTION TEMPERA TURE (ϒC)

IGT, GATE TRIGGER CURRENT (mA)

100

VD = 12 V

RL = 100

(di/dt)

c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

ITM

VDRM

(di/dt)

c = 6f ITM

1000

f = 1

2 tw

TJ = 125°C100°C75°C

100

(dv/dt) , CRITICAL RATE OF RISE OF

(V/s )μ

COMMUTATING VOLTAGE

20 30 40 50 60 70 80 90 100

RG, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)

5000

010000100010010

(V/s

)

VD = 800 Vpk

TJ = 125°C

Figure 10. Simpliﬁed Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

LL1N4007

200 V

MEASURE

CHARGE

CONTROL

CHARGE TRIGGER

MT2

MT1

1N914

TRIGGER CONTROL

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Thyristors Datasheet

Speciﬁcations are subject to change without notice.

Revised: GD. 03/08/21

MAC16DG, MAC16MG, MAC16NG

TRIAC – 400V - 800V

Device Package Shipping

MAC16DG

TO-220

(Pb-Free) 1000 Units/ Box

MAC16MG

MAC16NG

Dimensions Part Marking System

12 3

SEATING

PLANE

Pin Assignment

1Main Terminal 1

2Main Terminal 2

3 Gate

4Main Terminal 2

Ordering Information

TO 220AB

CASE 221A

STYLE 12

123

1. Dimensioning and tolerancing per ansi y14.5m, 1982.

2. Controlling dimension: inch.

3. Dimension z deﬁnes a zone where all body and lead irregularities are allowed.

Dim Inches Millimeters

Min Max Min Max

A0.590 0.620 14.99 15.75

B0.380 0.420 9.65 10.67

C0.178 0.188 4.52 4.78

D0.025 0.035 0.64 0.89

F0.142 0.147 3.61 3.73

G0.095 0.105 2.41 2.67

H0.110 0.13 0 2.79 3.30

J0.018 0.024 0.46 0.61

K0.540 0.575 13.72 14.61

L0.060 0.075 1.52 1.91

N0.195 0.205 4.95 5.21

Q0.105 0.115 2.67 2.92

R0.085 0.095 2.16 2.41

S0.045 0.060 1. 14 1.52

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1. 15 ---

Z--- 0.080 --- 2.04

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not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.

MAC16xG

YMAXX

x =D, M or N

Y =Year

M =Month

A =Assembly Site

XX =Lot Serial Code

G =Pb-Free Package