STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features * Designed for soft commutation only TAB * Maximum junction temperature: TJ = 175 C * Minimized tail current 2 * VCE(sat) = 2.0 V (typ.) @ IC = 15 A 3 3 1 2 1 * Tight parameters distribution * Safe paralleling * Very low VF soft recovery co-packaged diode TO-247 TO-3P * Low thermal resistance * Lead free package Applications Figure 1. Internal schematic diagram * Induction heating * Microwave oven C (2, TAB) * Resonant converters Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW20IH125DF G20IH125DF TO-247 Tube STGWT20IH125DF G20IH125DF TO-3P Tube February 2014 This is information on a product in full production. DocID025269 Rev 2 1/17 www.st.com 17 Contents STGW20IH125DF, STGWT20IH125DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID025269 Rev 2 STGW20IH125DF, STGWT20IH125DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1250 V IC Continuous collector current at TC = 25 C 40 A IC Continuous collector current at TC = 100 C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 40 A IF Continuous forward current at TC = 100 C 20 A IFP(1) Pulsed forward current 80 A PTOT Total dissipation at TC = 25 C 259 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit TJ 1. Pulse width limited by maximum junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.58 C/W RthJC Thermal resistance junction-case diode 1.47 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID025269 Rev 2 3/17 Electrical characteristics 2 STGW20IH125DF, STGWT20IH125DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Max. 1250 VGE = 15 V, IC = 15 A VCE(sat) Typ. V 2 VGE = 15 V, IC = 15 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 15 A TJ = 175 C Unit 2.5 2.2 V 2.3 VGE = 15 V, IC = 30 A 2.55 IF = 15 A 1.1 IF = 15 A TJ = 125 C 1.05 IF = 15 A TJ = 175 C 1 1.5 Forward on-voltage V IF= 30A VGE(th) Gate threshold voltage VCE = VGE, IC = 500 A ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 1.25 5 6 7 V VCE = 1250 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/17 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 600 V, IC = 15 A, VGE = 15 V, see Figure 25 Qge Gate-emitter charge Qgc Gate-collector charge DocID025269 Rev 2 Min. Typ. Max. Unit - 1290 - pF - 96 - pF - 30.6 - pF - 69 - nC - 7.2 - nC - 40.8 - nC STGW20IH125DF, STGWT20IH125DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Turn-off switching losses td(off) Turn-off delay time Eoff(1) Typ. Max. 106 Eoff(1) tf Min. VCE = 600 V, IC = 15 A, RG = 10 , VGE = 15 V, see Figure 23 ns - 79 - ns - 410 - J 109 Current fall time Turn-off switching losses VCE = 600 V, IC = 15 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 23 Unit ns - 176 - ns - 820 - J Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 900V, RG = 10 , IC = 30 A, L = 500 H, Csnub = 330 nF, see Figure 24 Eoff(1) Turn-off switching losses VCC = 900V, RG = 10 , IC = 30 A, L = 500 H, Csnub = 330 nF, TJ = 175 C, see Figure 24 Min. Typ. Max. - 163 J - 366 - 1. Turn-off losses include also the tail of the collector current. DocID025269 Rev 2 5/17 Electrical characteristics 2.1 STGW20IH125DF, STGWT20IH125DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD161220131549FSR Ptot (W) VGE 15V, TJ 175 C Figure 3. Collector current vs. case temperature GIPD161220131556FSR IC (A) 40 VGE 15V, TJ 175 C 250 35 200 30 25 150 20 100 15 10 50 5 0 0 50 25 0 0 75 100 125 150 175 TC(C) Figure 4. Output characteristics (TJ = 25C) GIPD161220131602FSR IC (A) 13V VGE=15V 70 GIPD161220131620FSR IC (A) VGE=15V 70 60 50 50 11V 75 100 125 150 175 TC(C) Figure 5. Output characteristics (TJ = 175C) 60 40 50 25 13V 40 11V 30 30 20 20 9V 9V 10 0 0 10 2 1 3 4 5 VCE(V) Figure 6. VCE(sat) vs. junction temperature GIPD161220131648FSR VCE(sat) (V) VGE= 15V 3.2 IC= 30A 3.0 2 3 5 4 VCE(V) Figure 7. VCE(sat) vs. collector current GIPD161220131702FSR VCE(sat) (V) 3.2 TJ= 175C VGE= 15V 3.0 2.6 2.6 TJ= 25C 2.4 IC= 15A 2.4 2.2 2.2 2.0 2.0 1.8 IC= 7.5A 1.8 TJ= -40C 1.6 1.4 1.6 6/17 1 2.8 2.8 1.4 -50 7V 0 0 0 50 100 150 TJ(C) 1.2 DocID025269 Rev 2 0 5 10 15 20 25 IC(A) STGW20IH125DF, STGWT20IH125DF Electrical characteristics Figure 8. Forward bias safe operating area GIPD161220131714FSR IC (A) 1 s Figure 9. Transfer characteristics GIPD161220131719FSR IC (A) 45 VCE=10V 40 10 35 10 s 30 25 100 s 20 1 1 ms Single pulse Tc= 25C, TJ 175C VGE= 15V 15 TJ=175C 10 TJ=25C 5 0.1 10 1 1000 100 Figure 10. Diode VF vs. forward current GIPD161220131729FSR VF (V) 0 6 VCE(V) 2 9 10 11 VGE(V) Figure 11. Normalized VGE(th) vs junction temperature GIPD281020131600FSR VGE(th) (norm) 1.1 TJ= 25C 1.8 8 7 IC= 1mA VCE= VGE 1.0 TJ= 175C 1.6 0.9 1.4 TJ= -40C 1.2 0.8 1.0 0.7 0.8 0.6 0 20 10 30 40 50 60 Figure 12. Normalized V(BR)CES vs. junction temperature GIPD161220131741FSR V(BR)CES (norm) 1.04 0.6 -50 70 IF(A) IC= 2mA 0 50 100 150 TJ(C) Figure 13. Capacitance variation GIPD161220131745FSR C (pF) Cies 1000 1.02 100 0.98 Coes 10 0.94 0.9 -50 0 50 100 150 TJ(C) DocID025269 Rev 2 1 0.1 Cres 1 10 100 VCE(V) 7/17 Electrical characteristics STGW20IH125DF, STGWT20IH125DF Figure 14. Gate charge vs. gate-emitter voltage GIPD171220130851FSR VGE (V) IC= 15A IGE= 1mA VCC= 960V 16 Figure 15. Switching loss vs collector current Eoff (J) 1600 GIPD171220130858FSR VCC = 600V, VGE = 15V, RG = 10 1200 TJ = 175C 12 800 8 TJ = 25C 400 4 0 0 20 40 60 Figure 16. Switching-off loss vs gate resistance GIPD171220130941FSR Eoff (J) 1000 0 0 Qg(nC) 10 20 30 IC(A) Figure 17. Switching-off loss vs temperature Eoff (J) VCC = 600V, VGE = 15V, IC = 15A GIPD171220130947FSR VCC= 600V, VGE= 15V, RG= 10, IC= 15A 800 800 TJ = 175 C 600 600 200 0 400 TJ = 25 C 400 10 30 20 40 Figure 18. Switching-off loss vs collectoremitter voltage Eoff (J) 1200 200 25 RG() 75 100 125 150 TJ(C) Figure 19. Switching times vs. collector current GIPD171220130956FSR VGE= 15V, RG= 10, IC= 15A t (ns) 1000 GIPD171220131002FSR TJ= 175C, VGE= 15V, RG= 10, VCC= 600V tf TJ= 175C 800 50 100 600 tdoff 400 TJ= 25C 200 0 250 8/17 450 650 850 VCE(V) DocID025269 Rev 2 10 0 5 10 15 20 25 30 IC(A) STGW20IH125DF, STGWT20IH125DF Electrical characteristics Figure 20. Switching times vs. gate resistance t (ns) GIPD171220131047FSR TJ= 175C, VGE= 15V, IC= 15A, VCC= 600V tf 100 tdoff 10 0 10 20 30 40 RG() DocID025269 Rev 2 9/17 Electrical characteristics STGW20IH125DF, STGWT20IH125DF Figure 21. Thermal impedance for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 Figure 22. Thermal impedance for diode 10/17 DocID025269 Rev 2 tp (s) STGW20IH125DF, STGWT20IH125DF 3 Test circuits Test circuits Figure 23. Test circuit for inductive load switching Figure 24. Test circuit for capacitive load switching Csnub AM01504v1 AM17096v2 Figure 25. Gate charge test circuit Figure 26. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC Td(on) Tr(Ion) Ton AM01505v1 DocID025269 Rev 2 10% Td(off) Tf Toff AM01506v1 11/17 Package mechanical data 4 STGW20IH125DF, STGWT20IH125DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 27. TO-247 drawing 0075325_G 12/17 DocID025269 Rev 2 STGW20IH125DF, STGWT20IH125DF Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID025269 Rev 2 5.70 13/17 Package mechanical data STGW20IH125DF, STGWT20IH125DF Figure 28. TO-3P drawing 8045950_A 14/17 DocID025269 Rev 2 STGW20IH125DF, STGWT20IH125DF Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID025269 Rev 2 15/17 Revision history 5 STGW20IH125DF, STGWT20IH125DF Revision history Table 10. Document revision history 16/17 Date Revision Changes 13-Jan-2014 1 Initial release. 03-Feb-2014 2 Added VCE(sat) max value in Table 5: Dynamic characteristics. Minor text changes. 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