This is information on a product in full production.
February 2014 DocID025269 Rev 2 1/17
17
STGW20IH125DF
STGWT20IH125DF
1250 V, 20 A IH series
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Designed for soft commutation only
•Maximum junction temperature: T
J
= 175 °C
•Minimized tail current
•V
CE(sat)
= 2.0 V (typ.) @ I
C
= 15 A
•Tight parameters distribution
•Safe paralleling
•Very low V
F
soft recovery co-packaged diode
•Low thermal resistance
•Lead free package
Applications
•Induction heating
•Microwave oven
•Resonant converters
Description
These IGBTs are developed using an advanced
proprietary trench gate field-stop structure and
performance is optimized in both conduction and
switching losses. A freewheeling diode with a low
drop forward voltage is co-packaged. The result is
a product specifically designed to maximize
efficiency for any resonant and soft-switching
application.
TO-247 TO-3P
1
23
1
2
3
TAB
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGW20IH125DF G20IH125DF TO-247 Tube
STGWT20IH125DF G20IH125DF TO-3P Tube
www.st.com
Contents STGW20IH125DF, STGWT20IH125DF
2/17 DocID025269 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID025269 Rev 2 3/17
STGW20IH125DF, STGWT20IH125DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 1250 V
I
C
Continuous collector current at T
C
= 25 °C 40 A
I
C
Continuous collector current at T
C
= 100 °C 20 A
I
CP(1)
1. Pulse width limited by maximum junction temperature
Pulsed collector current 80 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 40 A
I
F
Continuous forward current at T
C
= 100 °C 20 A
I
FP(1)
Pulsed forward current 80 A
P
TOT
Total dissipation at T
C
= 25 °C 259 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.58 °C/W
R
thJC
Thermal resistance junction-case diode 1.47 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
4/17 DocID025269 Rev 2
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 1250 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 15 A 2 2.5
V
V
GE
= 15 V, I
C
= 15 A
T
J
= 125 °C 2.2
V
GE
= 15 V, I
C
= 15 A
T
J
= 175 °C 2.3
V
GE
= 15 V, I
C
= 30 A 2.55
V
F
Forward on-voltage
I
F
= 15 A 1.1 1.5
V
I
F
= 15 A T
J
= 125 °C 1.05
I
F
= 15 A T
J
= 175 °C 1
I
F
= 30A 1.25
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 500 μA567V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 1250 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-1290- pF
C
oes
Output capacitance - 96 - pF
C
res
Reverse transfer
capacitance - 30.6 - pF
Q
g
Total gate charge
V
CC
= 600 V, I
C
= 15 A,
V
GE
= 15 V, see Figure 25
-69-nC
Q
ge
Gate-emitter charge - 7.2 - nC
Q
gc
Gate-collector charge - 40.8 - nC
DocID025269 Rev 2 5/17
STGW20IH125DF, STGWT20IH125DF Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test condition s Min. Typ. Max. Unit
t
d(off)
Turn-off delay time V
CE
= 600 V, I
C
= 15 A,
R
G
= 10 Ω, V
GE
= 15 V, see
Figure 23
106 ns
t
f
Current fall time - 79 - ns
E
off(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 410 - μJ
t
d(off)
Turn-off delay time V
CE
= 600 V, I
C
= 15 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 23
109 ns
t
f
Current fall time - 176 - ns
E
off(1)
Turn-off switching losses - 820 - μJ
Table 7. IGBT switching characteristics (capacitive load)
Symbol Parameter Test condition s Min. Typ. Max. Unit
E
off(1)
1. Turn-off losses include also the tail of the collector current.
Turn-off switching losses
V
CC
= 900V, R
G
= 10 Ω,
I
C
= 30 A, L = 500 μH,
C
snub
= 330 nF, see
Figure 24
-163-
μJ
V
CC
= 900V, R
G
= 10 Ω,
I
C
= 30 A, L = 500 μH,
C
snub
= 330 nF, T
J
= 175 °C,
see Figure 24
-366-
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
6/17 DocID025269 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
P
tot
100
50
0025 T
C
(°C)
(W)
100
150
50 75 175125 150
200
250
V
GE
≥ 15V, T
J
≤ 175 °C
GIPD161220131549FSR
I
C
10
5
0025 T
C
(°C)
(A)
100
15
50 75
20
175
V
GE
≥ 15V, T
J
≤ 175 °C
125 150
30
25
35
40
GIPD161220131556FSR
Figure 4. Output characteristics (T
J
= 25°C) Figure 5. Output characteristics (T
J
= 175°C)
I
C
10
0
01V
CE
(V)
(A)
4
20
23
V
GE
=15V
30
9V
11V
5
40
50
60
70 13V
GIPD161220131602FSR
I
C
10
0
01 V
CE
(V)
(A)
4
20
23
V
GE
=15V
30
9V
11V
7V
13V
5
40
50
60
70
GIPD161220131620FSR
Figure 6. V
CE(sat)
vs. junction temperature Figure 7. V
CE(sat)
vs. collector current
V
CE(sat)
2.2
2.0
1.8
1.6
-50 T
J
(°C)
(V)
100
2.4
050
2.6
150
V
GE
= 15V I
C
= 30A
I
C
= 15A
I
C
= 7.5A
1.4
2.8
3.0
3.2
GIPD161220131648FSR
V
CE(sat)
1.6
1.4
1.2 0I
C
(A)
(V)
20
1.8
15
2.0
25
2.2
V
GE
= 15V
T
J
= -40°C
T
J
= 25°C
T
J
= 175°C
105
2.6
2.4
2.8
3.0
3.2
GIPD161220131702FSR
DocID025269 Rev 2 7/17
STGW20IH125DF, STGWT20IH125DF Electrical characteristics
Figure 8. Forward bias safe operating area Figure 9. Transfer characteristics
I
C
10
1
0.11V
CE
(V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, T
J
≤ 175°C
V
GE
= 15V
100
1 μs
1000
GIPD161220131714FSR
I
C
15
10
5
067V
GE
(V)
(A)
10
20
89
25
T
J
=175°C
30
35
T
J
=25°C
V
CE
=10V
11
40
45
GIPD161220131719FSR
Figure 10. Diode V
F
vs. forward current Figure 11. Normalized V
GE(th)
vs junction
temperature
V
F
1.8
1.6
1.0
0.60I
F
(A)
(V)
10
T
J
= 175°C
20 30 40
T
J
= 25°C
T
J
= -40°C
50 60 70
0.8
1.2
1.4
2
GIPD161220131729FSR
V
GE(th)
1.1
1.0
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 1mA
V
CE
= V
GE
0.7
0.8
0.9
GIPD281020131600FSR
Figure 12. Normalized V
(BR)CES
vs. junction
temperature Figure 13. Capacitance variation
V
(BR)CES
1.04
0.98
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
0.94
1.02
GIPD161220131741FSR
C
1V
CE
(V)
(pF)
0.1 1 10
C
ies
10
100
C
oes
C
res
1000
100
GIPD161220131745FSR
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
8/17 DocID025269 Rev 2
Figure 14. Gate charge vs. gate-emitter voltage Figure 15. Switching loss vs collector current
V
GE
8
0
Q
g
(nC)
(V)
020
I
C
= 15A
I
GE
= 1mA
V
CC
= 960V
4
40
12
60
16
GIPD171220130851FSR
E
off
0I
C
(A)
(μJ)
01020
400
30
800
T
J
= 25°C
1200
V
CC
= 600V, V
GE
= 15V,
R
G
= 10Ω
T
J
= 175°C
1600
GIPD171220130858FSR
Figure 16. Switching-off loss vs gate resistance Figure 17. Switching-off loss vs temperature
E
off
200 R
G
(Ω)
(μJ)
01020
400
600
800
30 40
1000
T
J
= 175 °C
V
CC
= 600V, V
GE
= 15V,
I
C
= 15A
T
J
= 25 °C
GIPD171220130941FSR
E
off
200 T
J
(°C)
(μJ)
25 50 75
400
600
800
100 150
V
CC
= 600V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 15A
125
GIPD171220130947FSR
Figure 18. Switching-off loss vs collector-
emit ter voltage Figure 19. Switching times vs. collector current
E
off
0V
CE
(V)
(μJ)
450
200
400
600
V
GE
= 15V,
R
G
= 10Ω, I
C
= 15A
800
1000
250 650 850
1200
T
J
= 175°C
T
J
= 25°C
GIPD171220130956FSR
t
I
C
(A)
(ns)
0510
10 15
t
f
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, V
CC
= 600V
t
doff
100
20 25 30
GIPD171220131002FSR
DocID025269 Rev 2 9/17
STGW20IH125DF, STGWT20IH125DF Electrical characteristics
Figure 20. Switching times vs. gate resistance
t
R
G
(Ω)
(ns)
01020
10 30
t
f
T
J
= 175°C, V
GE
= 15V,
I
C
= 15A, V
CC
= 600V
40
100
t
doff
GIPD171220131047FSR
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
10/17 DocID025269 Rev 2
Figure 21. Thermal impedance for IGBT
Figure 22. Thermal impedance for diode
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID025269 Rev 2 11/17
STGW20IH125DF, STGWT20IH125DF Test circuits
3 Test circuits
Figure 23. Test circuit for inductive load
switching Figure 24. Test circuit for capacitive load
switching
Figure 25. Gate charge test circuit Figure 26. Switching waveform
AM01504v1
AM17096v2
Csnub
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
Package mechanical data STGW20IH125DF, STGWT20IH125DF
12/17 DocID025269 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 27. TO-2 47 drawing
0075325_G
DocID025269 Rev 2 13/17
STGW20IH125DF, STGWT20IH125DF Package mechanical data
Table 8. TO-2 47 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGW20IH125DF, STGWT20IH125DF
14/17 DocID025269 Rev 2
Figure 28. TO-3P drawin g
8045950_A
DocID025269 Rev 2 15/17
STGW20IH125DF, STGWT20IH125DF Package mechanical data
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID025269 Rev 2 17/17
STGW20IH125DF, STGWT20IH125DF
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