BFR93A E6327 - Infineon Technologies

DATA SH EET

Product specification

Supersedes data of September 1995 1997 Oct 29

DISCRETE SEMICONDUCTORS

BFR93A

NPN 6 GHz wideband transistor

1997 Oct 29 2

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

FEATURES

High power gain

Low noise figure

Very low inter modul ation dis tortion.

APPLICATIONS

RF wideband amplifiers and

oscillators.

DESCRIPTION

NPN wideband transistor in a plastic

SOT23 package.

PNP complement: BFT93.

PINNING

PIN DESCRIPTION

1base

2emitter

3 collector

Fig.1 SOT23.

lfpage

MSB003

Top view

Marking code: R2p.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Ra ting System (I EC 134).

Note

1. Ts is the temperature at the sold ering point of the collector pin.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCBO collector-base voltage open emitter 15 V

VCEO collector-emitter voltage open base 12 V

ICcollector current (DC) 35 mA

Ptot total power dissipation Ts95 C300 mW

Cre feedback capacitance IC=0; V

CE =5V; f=1MHz 0.6 pF

fTtransition frequenc y IC=30mA; V

CE =5V; f=500MHz 6 GHz

GUM maximum unilateral power gain IC=30mA; V

CE =8V; f= 1GHz; T

amb =25C13 dB

IC=30mA; V

CE =8V; f= 2GHz; T

amb =25C7 dB

F noise figure IC=5mA; V

CE =8V; f= 1GHz; s=opt;

Tamb =25C1.9 dB

VOoutput voltage dim =60 dB; IC=30mA; V

CE =8V;

RL=75; Tamb =25C;

fp+f

qfr= 793.25 MHz

425 mV

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 15 V

VCEO collector-emitter voltage open base 12 V

VEBO emitter-base voltage open collector 2V

ICcollector current (DC) 35 mA

Ptot total power dissipation Ts95 C; note 1 300 mW

Tstg storage temperature 65 +150 C

Tjjunction temperature +175 C

1997 Oct 29 3

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

THERMAL CHARACTE RISTI CS

Note

1. Ts is the temperature at the sold ering point of the collector pin.

CHARACTERISTICS

Tj=25C unless otherwise specified.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and .

2. Measured on th e s ame die in a SOT37 packag e (BFR91A).

3. dim =60 dB (DIN 45004B); IC=30mA; V

CE =8V; R

L=75; Tamb =25C;

Vp=V

O at dim =60 dB; fp=795.25MHz;

Vq=V

O6dB at f

q=803.25MHz;

Vr=V

O6dB at f

r=805.25MHz;

measured at fp+f

qfr=793.25MHz.

4. IC=30mA; V

CE =8V; R

L=75; Tamb =25C;

Vp=200mV at f

p=250MHz;

Vq=200mV at f

q=560MHz;

measured at fp+f

q=810MHz.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts95 C; note 1 260 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE=0; V

CB =5V 50 nA

hFE DC current gain IC=30mA; V

CE =5V 40 90 

Cccollector capacitance IE=i

e=0; V

CB =5V; f=1MHz 0.7 pF

Ceemitter cap acita nce IC=i

c=0; V

EB = 0.5 V; f = 1 MHz 1.9 pF

Cre feedback capacitance IC=i

c=0; V

CE = 5 V; f = 1 MHz;

Tamb =25C0.6 pF

fTtransition frequenc y IC=30mA; V

CE =5V; f=500MHz 4.5 6 GHz

GUM maximum unilateral power gain

(note 1) IC=30mA; V

CE =8V; f=1GHz;

Tamb =25C13 dB

IC=30mA; V

CE =8V; f=2GHz;

Tamb =25C7dB

F noise figure (note 2) IC=5mA; V

CE = 8 V; f = 1 GHz;

s=opt; Tamb =25C1.9 dB

IC=5mA; V

CE = 8 V; f = 2 GHz;

s=opt; Tamb =25C3dB

VOoutput voltage notes 2 and 3 425 mV

d2second order intermodulation

distortion notes 2 and 4 50 dB

GUM 10 log S21 2

1S11 2

–1S22 2

–

---------------------------------------------------------- dB=

1997 Oct 29 4

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.2 Intermodulation d istortion and second harmonic dis t ortion MATV test circuit.

L1 = L3 = 5 H choke.

L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.

handbook, full pagewidth

MBB251

18 Ω

1.5 nF

10 kΩL2

1 nF

75 Ω

input

270 Ω

1 nF

1.5 nF

1 nF

0.68 pF

3.3 pF

DUT

75 Ω

output

VCC

VBB

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MBG246

150

Ptot

(mW)

Ts(oC)

Fig.4 DC current gain as a fu nction of

collector current.

VCE =5V; T

j=25C.

handbook, halfpage

0102030

120

MCD087

hFE

I (mA)

1997 Oct 29 5

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.5 Collector capacitance as a function of

collector-base voltage; typical values.

IE=i

e= 0; f = 1 MHz; Tj=25C.

handbook, halfpage

048 16

0.8

MBB252

0.6

0.4

0.2

(pF)

VCB (V)

Fig.6 Transition frequency as a function of

collector current; typical values.

VCE = 5 V; f = 500 MHz; Tj=25C.

handbook, halfpage

01020 40

MCD089

30 I (mA)

(GHz)

Fig.7 Gain as a function of collector current;

typical values.

VCE =8V; f=500MHz.

handbook, halfpage

010 20 40

IC (mA)

gain

(dB)

MBB255

MSG

GUM

Fig.8 Gain as a function of collector current;

typical values.

VCE =8V; f=1GHz.

handbook, halfpage

010 20 40

MBB256

gain

(dB)

I (mA)

MSG

GUM

1997 Oct 29 6

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.9 Gain as a functio n of frequency;

typical values.

IC=10mA; V

CE =8V.

handbook, halfpage

010

MBB257

102103104

gain

(dB)

f (MHz)

MSG

GUM

Gmax

Fig.10 Gain as a function of frequency;

typical values.

IC=30mA; V

CE =8V.

handbook, halfpage

010

MBB258

102103104

gain

(dB)

f (MHz)

MSG

GUM

Gmax

Fig.11 Circles of constant noise figure;

typical values.

IC=4mA; V

CE = 8 V; f = 800 MHz; Tamb =25C.

handbook, halfpage

02040 80

MBB253

60 G (mS)

(mS)

2.0 2.5

1.6 F = 3.5 dB3.0

Fig.12 Circles of constant noise figure;

typical values.

IC=4mA; V

CE = 8 V; f = 800 MHz; Tamb =25C.

handbook, halfpage

30 20 40 60

MBB254

G (mS)

(mS)

2.5

3.0

3.5

2.3

F = 4.0 dB

1997 Oct 29 7

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.13 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MCD094

101

(dB)

I (mA)

f = 2 GHz

500 MHz

1 GHz

102

Fig.14 Minimum noise figure as a function of

frequency; typical valu es.

VCE =8V.

handbook, halfpage

MCD095

(dB)

f (MHz)

5 mA

10 mA

I = 30 mA

Fig.15 Intermodulation distortion; typical values.

VCE =8V; V

O= 425 mV (52.6 dBmV);

fp+f

qfr= 793.25 MHz; Tamb =25C.

Measured in MATV test circuit (see Fig.2)

handbook, halfpage

MBB263

(dB)

01020 40

I (mA)

dim

Fig.16 Second order intermodulation distortion;

typical values.

VCE =8V; V

O=200mV (46dBmV);

fp+f

qfr= 8 10 MHz; Tamb =25C.

Measured in MATV test circuit (see Fig.2)

handbook, halfpage

01020 40

MBB264

I (mA)

(dB)

1997 Oct 29 8

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.17 Common emitter input reflection coefficient (S11).

IC=30mA; V

CE =8V; Z

o=50; Tamb =25C.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MBB259

500

200

100 MHz

10.2 1052

0.5

1200

800 1000

Fig.18 Common emitter forward transmission coefficient (S21).

IC=30mA; V

CE =8V; T

amb =25C.

handbook, full pagewidth

MBB261

30o

60o

90o

120o

150o

180o

150o

120o

90o60o

30o

100

10 20 30

200

500

800

1000

1200 MHz

1997 Oct 29 9

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

Fig.19 Common emitter reverse trans m ission coefficient (S12).

IC=30mA; V

CE =8V; T

amb =25C.

handbook, full pagewidth

MBB262

30o

60o

90o

120o

150o

180o

150o

120o

90o60o

30o

200

1200

0.05 0.1 0.15

100 MHz

500

800

1000

Fig.20 Common emitter output refle ction coefficient (S22).

IC=30mA; V

CE =8V; Z

o=50; Tamb =25C.

handbook, full pagewidth

0.2

0.5

∞

0.2

0.5

+ j

– j

MBB260

10.2 10520.5

1200

800

1000 500

200

100 MHz

1997 Oct 29 10

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT23

1997 Oct 29 11

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

DATA SHEET STATUS

Notes

1. Please consult the most rec ently issued document b efor e initiating or completing a design.

2. The product s tatus of device (s) described in this document may have changed si nce this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

DEFINITIONS

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provided in a Product data she et shall define the

specification of the product as agreed between NXP

Semiconductors and its custo m er, unless NXP

Semiconductors and cus to mer have explicitly agreed

otherwise in writing. In no event however, shall an

agreement be valid in which th e NXP Semiconductors

product is deemed to offer functions and qualities beyond

those described in the Product data sheet.

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However, NXP Semiconduc tors does not give any

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shall have no liability for the consequences of use of such

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reserves the right to make changes to information

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Applications  Applications that are described herein for

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NXP Semiconductors makes no representation or

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Customers are responsible for the design and operation of

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associated with their ap plications and pr oducts.

1997 Oct 29 12

NXP Semiconductors Product specification

NPN 6 GHz wideband transistor BFR93A

NXP Semiconductors does not accept any liability related

to any default, damage, cost s or problem which is based

on any weakness or default in the customer’s applications

or products, or the applic ation or use by customer’s third

party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and

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the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this

respect.

Limiting values  Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ra tings only and

(proper) operat ion of the device at these or any other

conditions above those given in the Recommende d

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

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reliability of the device.

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Semiconductors products are sold subject to the genera l

terms and conditio ns of commercial sale, as published at

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extract of th e product data given in the Li miting values and

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In the event that customer uses the product for design-in

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R77/02/pp13 Date of release: 1997 Oct 29