BU806 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  



This Darlington transistor is a high voltage, high speed device for use in horizontal

deflection circuits in TV’s and CRT’s.

•High Voltage: VCEV = 330 or 400 V

•Fast Switching Speed:

tc = 1.0 µs (max)

•Low Saturation Voltage:

VCE(sat) = 1.5 V (max)

•Packaged in JEDEC TO–220AB

•Damper Diode VF is specified.

VF = 2.0 V (max)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

BU806

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

200

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎ

400

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎ

400

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎ

6.0

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

8.0

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Collector Diode Current

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

2.0

ÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation, TC = 25°C

Derate above TC = 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.48

ÎÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to 150

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

2.08

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purposes,

1/8″ from Case for 5.0 Seconds

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

275

ÎÎÎÎÎ



SEMICONDUCTOR TECHNICAL DATA Order this document

by BU806/D

 Motorola, Inc. 1995



8.0 AMPERE

DARLINGTON

NPN POWER

TRANSISTORS

60 WATTS

200 VOLTS

CASE 221A–06

TO–220AB

REV 1

BU806

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

200

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCBO, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, VBE(off) = 6.0 Vdc)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 50 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 50 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.4

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Collector Diode Forward Voltage

(IF = 4.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎ

Turn–On Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(Resistive Load, VCC = 100 Vdc,

IC = 5.0 Adc, IB1 = 50 mAdc,

IB2 = 500 mAdc)

ÎÎÎÎ

ton

ÎÎÎÎ

—

ÎÎÎÎ

0.35

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(Resistive Load, VCC = 100 Vdc,

IC = 5.0 Adc, IB1 = 50 mAdc,

IB2 = 500 mAdc)

ÎÎÎÎ

—

ÎÎÎÎ

0.55

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB2 = 500 mAdc)

ÎÎÎÎ

—

ÎÎÎÎ

0.20

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Crossover Time

(IC = 5.0 Adc, IB1 = 50 mAdc, VBE(off) = 4.0 Vdc,

Vclamp = 200 Vdc, L = 500 µH)

ÎÎÎÎ

—

ÎÎÎÎ

0.40

ÎÎÎÎ

1.0

ÎÎÎ

µs

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

1%.

600

0.2

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

30 0.3 0.5 0.7 1.0 5.0 7.0 10

200

300

100

hFE, DC CURRENT GAIN

2.0 3.0

400 VCE = 5.0 V

TJ = 25

3.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

IC, COLLECTOR CURRENT (AMPS)

5.0 ms

1.0 ms

100 200 300

0.1

TC = 25

Figure 2. Safe Operating Area (FBSOA)

non–repetitive

50 ms

BU806

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

BU806

4 Motorola Bipolar Power Transistor Device Data

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BU806/D

*BU806/D*

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