TOSHIBA 2SA940A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SA940A POWER AMPLIFIER APPLICATIONS VERTICAL OUTPUT APPLICATIONS @ Complementary to 2SC2073A MAXIMUM RATINGS (Ta = 25C) I+ 2.5440.25 CHARACTERISTIC SYMBOL | RATING | UNIT peat fs Collector-Base Voltage VCBO 150 Vv . Collector-Emitter Voltage VCEO 150 Vv 1. BASE Emitter-Base Volta V 5 V oer CIOR er vase Vonage EBO = 3. EMITTER Collector Current I -1.5 A Base Current Ip 0.5 A JEDEC Collector Power Ta=25C P 2.0 Ww EIAd SC-67 Dissipation Te=25C Cc 25 TOSHIBA 2-10R1A Junction Temperature Tj 150 C Weight : 1.7g Storage Temperature Range T stg 55~150 C ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Icpo | Vcp=120V, In=0 10| A Emitter Cut-off Current Ippo | VEB=5V, Ic=0 10| pA DC Current Gain hrEe VcR= 10V, I = 500mA 40 75| 140 Collector-Emitter Saturation _ _ Voltage VCE (sat) |Ic=500mA, IRp=50mA -1.5]/ V Base-Emitter Voltage VBE VcE= LOV, Ic = 500mA 0.65|0.75|0.85) V Transition Frequency fp VcE= 10V, Ic = 500mA _ 4| | MHz Collector Output Capacitance Cob Vcp= 10V, Im=0, f=1MHz 55; pF 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-18 1/2 TOSHIBA Ic VCE COMMON EMITTER Tco=25C -50 40 Ig (A) COLLECTOR CURRENT 20 WW) 0 -4 -8 -12 16 COLLECTOR-EMITTER VOLTAGE Ver hrE Ic 500 COMMON EMITTER Vcg=-10V Te=100C a DC CURRENT GAIN hpg 1 -0.01 0.03 -0.1 -0.3 -1 -3 COLLECTOR CURRENT Ic (A) VCE (sat) Ic COMMON EMITTER I/Ip =10 Te=25C | o I oo = COLLECTOR-EMITTER SATURATION VOLTAGE Vopr Gat) (V) & & a -0 0.03 -0.3 -1 -3 COLLECTOR CURRENT Ig (A) -0.1 -0.01 COLLECTOR DISSIPATION Pc (W) COLLECTOR CURRENT Ic (A) 2SA940A Po - Ta 32 @ Te=Ta INFINITE HEAT SINK 24 aN 200x200x2mmAe NK HEAT SINK N @ 100x100x2mmAe NM HEAT SINK 16 NN 50x50x2mmAL ~ NX HEAT SINK & MJ NO HEAT SINK 8 ~~. N a} @ | ~~] \ [~~ ~~ N 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta (C) SAFE OPERATING AREA -5-7 TTT TT Ig MAX. (PULSED) 3X 3-H 10ms X ContINvOUS) Nj N-100ms x N 4 NON NA NN \ A NA DC OPERATION NYY -0.5 Te=25C 4 NN -0.3 \\ -0.1 \\ \\ XS 0.05| >< SINGLE NONREPETITIVE it 7s PULSE Te=25C CURVES MUST BE DERATED LINEARLY WITH INCREASE VcEo 7 _0.02| IN TEMPERATURE MAX, -5 -10 -30 100 300 COLLECTOR-EMITTER VOLTAGE Veg (V) 1998-02-18 2/2