053-7121 Rev - 11-2002
MS2267
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS2267 is a high power Class C NPN transistor
specifically designed for TACAN/DME applications.
This device is capable of operation under moderate pulse
width and duty cycles. Low thermal resistance and
computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The MS2267 utilizes an emitter ballasted die geometry
capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
mbol Paramete
alue Unit
PDISS Power Dissi
ation 575 W
IC Device Current 20 A
Vcc Collector-Supply Voltage 50 V
TJ Junction Temperature 200 °
°°
°C
TSTG Storage Temperature -65 to +200 °
°°
°C
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Junction-case Thermal Resistance∗
∗∗
∗ 0.28 °
°°
°C/W
Features
FeaturesFeatures
Features
• 960 – 1215MHz
• 50 VOLTS
• 5:1 VSWR CAPABILITY @ RATED CONDITIONS
• INPUT/OUTPUT MATCHING
• POUT = 250 WATTS
• GP = 8.0 dB MINIMUM
•
••
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS