SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES High Voltage : BC546 VCEO=65V. For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING (Ta=25) SYMBOL Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current BC547 80 VCBO 50 BC548 30 BC546 65 BC547 VCEO 45 BC548 30 BC546 6 BC547 VEBO 6 BC548 5 BC546 100 BC547 IC 100 BC548 100 BC546 -100 BC547 IE BC548 -100 V 3 3. EMITTER V TO-92 V mA mA -100 625 mW Junction Temperature Tj 150 Tstg -55150 Revision No : 3 2 2. BASE PC 1998. 10. 8 1 1. COLLECTOR Collector Power Dissipation Storage Temperature Range F F C Collector-Base H UNIT MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M BC546 RATING L CHARACTERISTIC DIM A B C D E F G H J K L M N 1/3 BC546/7/8 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION VCB=30V, IE=0 BC546 DC Current Gain (Note) BC547 hFE VCE=5V, IC=2mA BC548 MIN. TYP. MAX. UNIT - - 15 nA 110 - 450 110 - 800 110 - 800 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V Base-Emitter Voltage VBE(ON)1 VCE=5V, IC=2mA 0.58 - 0.7 V VBE(ON)2 VCE=5V, IC=10mA - - 0.75 V VCE=5V, IC=10mA, f=100MHz - 150 - MHz VCB=10V, f=1MHz, IE=0 - - 4.5 pF - 1.0 10 dB fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=6V, IC=0.1mA Rg=10k, f=1kHz NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION hFE 1998. 10. 8 none A B C BC546 110450 110220 200450 - BC547 110800 110220 200450 420800 BC548 110800 110220 200450 420800 Revision No : 3 2/3 BC546/7/8 I C - VCE (LOW VOLTAGE REGION) 3.0 2.0 160 1.0 120 80 0.5 I B =0.2mA 40 0 0 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 200 1k COMMON EMITTER Ta=25 C 5.0 6.0 1 2 3 4 5 6 300 100 50 30 VCE =1V 0.3 1 1 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 0.01 0.3 1 10 3 30 100 300 3k 1k 100 50 30 10 0.1 0.3 1 COLLECTOR POWER DISSIPATION P C (mW) 0 C 5 C 25 C Ta=- Ta=2 Ta=1 0 10 3 1 0.3 0.2 0.4 0.6 10 30 100 300 P C - Ta 300 30 3 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =6V 100 300 500 300 I B - V BE BASE CURRENT I B (A) 100 COMMON EMITTER VCE =5V Ta=25 C COLLECTOR CURRENT I C (mA) 0.8 1.0 BASE-EMITTER VOLTAGE V BE (V) 1998. 10. 8 30 f T - IC 0.5 0.3 0 10 VCE(sat) - I C I C /I B =10 1k 3 COLLECTOR CURRENT I C (mA) COMMON EMITTER 3k VCE =5V Ta=100 C Ta=25 C Ta=-25 C COLLECTOR-EMITTER VOLTAGE V CE (V) 3 0.1 COMMON EMITTER 500 10 0.1 7 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 240 h FE - I C Revision No : 3 1.2 700 625 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 3/3