FEATURES
MECHANICAL DATA
Case: Molded plastic
*
Epoxy: UL 94V-O rate flame retardant
*
Lead: MIL-STD-202E method 208C guaranteed
*
Mounting position: Any
*
*Weight: 0.008 gram
SOT-23
MMBTA56
2007-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
2GM
Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)
SYMBOL MAXMIN TYP
-80
-80
-4
-
-1.2
MHz
-
-0.1
100
50
V(BR)CBO
V(BR)CEO
VBE(on)
V(BR)EBO
UNITS
V
V
V
V
V
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
1
3
COLLECTOR
EMITTER
BASE
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
0.110(2.80)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.071(1.80)
0.019(2.00)
0.089(2.25)
0.100(2.55)
0.012(0.30)
0.020(0.50)
0.000(0.00)
0.004(0.10)
0.035(0.90)
0.043(1.10)
0.003(0.08)
0.006(0.15)
ICBO
hFE
Collector Cut - Off Current (VCB= -80V, IE=0)
DC Current Gain(VCE= -1V, IC= -100mA)
Collector - Emitter Saturation Voltage(IC= -100 mA, IB= -10mA)
Base - Emitter on Voltage(VCE=-1V,IC=-100mA)
Transition Frequency(VCE= -1V, IC= -100mA, f =100MHz)
CHARACTERISTICS
* Power dissipation
PCM : 0.225 W(Tamb=25OC)
* Collector current
ICM : -0.5 A
* Collector-base voltage
VCBO : -80 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
VCE(sat)
fT
-
--0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.1Collector Cut - Off Current (VCE= -60V, IB=0) ICEO
-
Collector - Base Breakdown Voltage (IC=-100 uA, IE =0)
Emitter - Base Breakdown Voltage (IE= -100 uA, IC = 0)
IC, COLLECTOR CURRENT, (A)
IC, COLLECTOR CURRENT, (mA)
VCE(SAT), COLLECTOR-EMITTER VOLTAGE, (V)
IC, COLLECTOR CURRENT, (A)
10
0
0.4
0.2
0.6
0.8
hFE, TYPICAL PULSED CURRENT GAIN
VBE(ON), BASE-EMITTER ON VOLTAGE, (V)
0
50
100
150
200
250
300
100
10.10.010.001
0.6
0.4
0.8
1.0
1.2
10010 1000
RATING AND CHARACTERISTICS CURVES ( MMBTA56 )
FIG.3 BASE-EMITTER SATURATION VOLTAGE
vs. COLLECTOR CURRENT
FIG.1 TYPICAL PULSE CURRENT GAIN
vs. COLLECTOR CURRENT
FIG.2 COLLECTOR-EMITTER SATURATION
VOLTAGE vs. COLLECTOR CURRENT
IC, COLLECTOR CURRENT, (A)
VBE(SAT), BASE-EMITTER VOLTAGE, (V)
10.1
0
1.0
0.8
0.6
0.4
0.2
1.2
10010 1000
FIG.4 BASE-EMITTER ON VOLTAGE vs.
COLLECTOR CURRENT
TA, AMBIENT TEMPERATURE, (OC)
VCE, COLLECTOR-EMITTER VOLTAGE, (V)
25 50
0.001
0.01
0.1
1
10
10075 125
FIG.5 COLLECTOR-CUTOFF CURRENT
vs. AMBIENT TEMPERATURE
IB, BASE CURRENT, (mA)
ICBO, COLLECTOR CURRENT, (nA)
3
0
2
4
6
8
10
205 10 30 50
FIG.6 COLLECTOR SATURATION REGION
V
CB
= 80V
125
O
C
V
CE
= 1V
25
O
C
-40
O
C
b =10
125
O
C
25
O
C
-40
O
C
b =10
-40
O
C
25
O
C
125
O
C
-40
O
C
25
O
C
125
O
C
V
CE
= 1V
T
A
= 25
O
C
100mA
10mA
I
C
= 1mA
IC, COLLECTOR CURRENT, (mA)
PD, POWER DISSIPATION, (W)
1
0
10
20
30
40
5010 20 100
RATING AND CHARACTERISTICS CURVES ( MMBTA56 )
FIG.8 GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
TEMPERATURE, (OC)
f T, GAIN BANDWIDTH PRODUCT, (MHz)
0
0
0.75
0.5
0.25
1
100 12525 50 75 150
FIG.9 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
VCE, COLLECTOR VOLTAGE, (V)
CAPACITANCE, (pF)
0.1
100
1001 10
FIG.7 INPUT AND OUTPUT CAPACITANCE
vs. REVERSE VOLTAGE
f =1.0MHz
C
ib
C
ob
V
CE
= 5V
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