1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
PM75B6L1C060
FEATURE
a) Adopting new 5th generation Full-Gate
CSTBTTM chip
b) Error output signal is possible from all
each protection upper and lower IGBT
c) The mounting surface is 90mm×50mm
about 30% less than B6LA type
• Monolithic gate drive & protection logic
• Detection, protection & status indication
circuits for, short-circuit, over-temperature
& under-voltage
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES Dimensions in mm
1. VUPC
2. UFo
3. UP
4. VUP1
5. VVPC
6. VFo
7. VP
8. VVP1
9. NC
10. NC
11. NC
12. NC
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
Terminal code
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
INTERNAL FUNCTIONS BLOCK DIAGRAM
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Conditions Ratings Unit
VCES Collector-Emitter Voltage VD=15V, VCIN=15V 600 V
IC T
C=25°C 75
ICRM Collector Current Pulse 150
A
Ptot Total Power Dissipation TC=25°C 201 W
IE Emitter Current TC=25°C 75
IERM (Free wheeling Diode Forward current) Pulse 150
A
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
CONVERTER PART
Symbol Parameter Conditions Ratings Unit
VCES Collector-Emitter Voltage VD=15V, VCIN=15V 600 V
IC T
C=25°C 75
ICRM Collector Current Pulse 150
A
Ptot Total Power Dissipation TC=25°C 201 W
IE Emitter Current TC=25°C 75
IERM (Free wheeling Diode Forward current) Pulse 150
A
IF Di Forward Current TC=25°C 75 A
VR(DC) Di Rated DC Reverse Voltage TC=25°C 600 V
Tj Junction Temperature -20 ~ +150 °C
*: Tc measurement point is just under the chip.
VccFoINGND
GND SC OT OUT
VccFoINGND
GND SC OT OUT
VccFoINGND
GND SC OT OUT
VccFoINGND
GND SC OT OUT
VccFoINGND
GND SC OT OUT
VccFoINGND
GND SC OT OUT
1.5k
Br Fo VNC WNVN1 VNUNNC NC NC NC VVPC VUPC
VPUP
VVP1 VUP1
VFo UFo
1.5k 1.5k
PUVWNB
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
CONTROL PART
Symbol Parameter Conditions Ratings Unit
VD Supply Voltage Applied between : VUP1-VUPC, VVP1-VVPC,VN1-VNC 20 V
VCIN Input Voltage Applied between : UP-VUPC, VP-VVPC,
UNVNWN・Br-VNC 20 V
VFO Fault Output Supply Voltage Applied between : UFo-VUPC, VFo-VVPC, Fo-VNC 20 V
IFO Fault Output Current Sink current at UFo, VFo, Fo terminals 20 mA
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
VCC(PROT) Supply Voltage Protected by
SC
VD =13.5V ~ 16.5V
Inverter Part, Tj =+125°C Start 450 V
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V
Tstg Storage Temperature -40 ~ +125 °C
Visol Isolation Voltage 60Hz, Sinusoidal, RMS, Charged part to Base, AC 1min. 2500 V
*: TC measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Inverter, IGBT (per 1 element) (Note.1) - - 0.62
Rth(j-c)D Inverter, FWDi (per 1 element) (Note.1) - - 1.06
Rth(j-c)Q Converter, IGBT (per 1 element) (Note.1) - - 0.62
Rth(j-c)D Converter, FWDi (per 1 element) (Note.1) - - 1.06
Rth(j-c)D
Thermal Resistance
Converter, Di (per 1 element) (Note.1) - - 1.06
Rth(c-s) Contact Thermal Resistance
Case to heat sink, (per 1 module)
Thermal grease applied (Note.1) - 0.06 -
K/W
Note.1: If you use this value, Rth(s-a) should be measured just under the chips.
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
ELECTRICAL CH ARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
Tj=25°C - 2.2 2.7
VCEsat Collector-Emitter Saturation
Voltage
VD=15V, IC=75A
VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 2.2 2.7
V
VEC Emitter-Collector Voltage IE=75A, VD=15V, VCIN= 15V (Fig. 2) - 2.4 3.3
V
ton 0.1 0.5 1.2
trr - 0.1 0.2
tc(on) - 0.15 0.3
toff - 1.1 2.0
tc(off)
Switching Time
VD=15V, VCIN=0V15V
VCC=300V, IC=75A
Tj=125°C
Inductive Load (Fig. 3,4)
- 0.2 0.4
μs
Tj=25°C - - 1
ICES Collector-Emitter Cut-off
Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10
mA
CONVERTER PART
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
Tj=25°C - 2.2 2.7
VCEsat Collector-Emitter Saturation
Voltage
VD=15V, IC=75A
VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 2.2 2.7
V
VEC Emitter-Collector Voltage IE=75A, VD=15V, VCIN= 15V (Fig. 2) - 2.4 3.3
V
VFM Di Forward Voltage IF=75A - 2.4 3.3
V
ton 0.1 0.5 1.2
trr - 0.1 0.2
tc(on) - 0.15 0.3
toff - 1.1 2.0
tc(off)
Switching Time
VD=15V, VCIN=0V15V
VCC=300V, IC=75A
Tj=125°C
Inductive Load (Fig. 3,4)
- 0.2 0.4
μs
Tj=25°C - - 1
ICES Collector-Emitter Cut-off
Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10
mA
CONTROL PART
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
VN1-VNC - 6.5 12
ID Circuit Current VD=15V, VCIN=15V V*P1-V*PC - 1.6 4.0
mA
Vth(ON) Input ON Threshold Voltage 1.2 1.5 1.8
Vth(OFF) Input OFF Threshold Voltage
Applied between :
UP-VUPC, VP-VVPC,
UNVNWN・Br -VNC 1.7 2.0 2.3 V
SC Short Circuit Trip Level -20Tj125°C, VD=15V (Fig. 3, 6) 112 - - A
toff(SC) Short Circuit Current Delay
Time VD=15V (Fig. 3, 6) - 0.2 - μs
OT Trip level 135 - -
OT(hys) Over Temperature Protection Detect Temperature of IGBT chip Hysteresis - 20 -
°C
UVt Trip level 11.5 12.0 12.5
UVr
Supply Circuit Under-Voltage
Protection -20Tj125°C Reset level - 12.5 - V
IFO(H) - - 0.01
IFO(L) Fault Output Current VD=15V, VFO=15V (Note.2) - 10 15
mA
tFO Fault Output Pulse Width VD=15V (Note.2) 1.0 1.8 - ms
Note.2: Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Symbol Parameter Conditions Min. Typ. Max. Unit
Mt Mounting Torque Mounting part screw : M4 1.4 1.65 1.9 Nm
m Weight - - 135 - g
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter Conditions Recommended value Unit
VCC Supply Voltage Applied across P-N terminals 450 V
VD Control Supply Voltage Applied between :
VUP1-VUPC,
VVP1-VVPC,VN1-VNC (Note.3) 15.0±1.5 V
VCIN(ON) Input ON Voltage 0.8
VCIN(OFF) Input OFF Voltage
Applied between :
UP-VUPC, VP-VVPC,
UNVNWN・Br -VNC 9.0 V
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 20 kHz
tdead Arm Shoot-through Blocking
Time
For IPM’s each input signals (Fig. 7) 2.0 μs
IO Module Operating Current RMS 30 A
Note.3: With ripple satisfying the following conditions: dv/dt swing ±5V/μs, Variation 2V peak to peak
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their
corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be
allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
Fig. 1 VCEsat Te s t
Fig. 2 VEC, VFM Test
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
Fig. 5 ICES Tes t
Fig. 6 SC test waveform
Ic
Vcc
GND
Fo
IN
U,V,(N)
P,(U,V,W,B)
V
VD(all) Fo
Vcin
P,(U,V,W,B)
V IE , IF
Fo
Vcin
Vcc
GND
Fo
IN
VD(all)
U,V,W,B,(N)
U,V,W,B
P
VD(all)
N
Ic
Vcc
Fo
Vcin
Vcc
GND
Fo
IN
Fo
Vcin
Vcc
GND
Fo
IN
VD(all)
U,V
P
VD(all)
N
Ic
Vcc
Fo
Vcin
Vcc
GND
Fo
IN
Fo
Vcin
Vcc
GND
Fo
IN
VD(all)
VCE
A
pu lse
Fo
Vcin
Vcc
GND
Fo
IN
VD(all)
P,(U,V,W,B)
U,V,W,B,(N)
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
Fig. 7 Dead time measurement point example
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND S AFE OPERAT ION ;
• Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL 0.8μs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Vcc
Fo
IN
GND GND
OUT
OT
SC
Vcc
Fo
IN
GND GND
OUT
OT
SC
Vcc
Fo
IN
GND GND
OUT
OT
SC
Vcc
Fo
IN
GND GND
OUT
OT
SC
Vcc
Fo
IN
GND GND
OUT
OT
SC
Vcc
Fo
IN
GND GND
OUT
OT
SC
Fo
Br
V
NC
V
N1
V
VPC
V
VP1
V
UPC
V
UP1
U
Fo
U
P
V
Fo
V
P
U
N
V
N
W
N
P
U
V
W
N
B
A
C Output
1.5k
1.5k
1.5k
NC
NC
NC
NC
VD1
VD2
VD3
20k
≥10µ
≥0.
20k
≥10µ
≥0.
20k
≥10µ
≥0. 1µ
20k
≥10µ
≥0.
20k
≥10µ
≥0.
20k
≥10µ
≥0.
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
COLLECTOR CURRENT IC (A)
0
10
20
30
40
50
60
70
80
0.5 1.0 1.5 2.0 2.5
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
0.0
0.5
1.0
1.5
2.0
2.5
0 1020304050607080
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
FREE WHEELING DIODE & DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
COLLECTO R-EMITTER
SATURATION VOLTAGE VCEsat (V)
1.0
1.5
2.0
2.5
12 13 14 15 16 17 18
EMITTER CURRENT IE (A)
Di FORWARD CURRENT IF (A)
0
10
20
30
40
50
60
70
80
00.511.522.5
CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
Di FORWARD VOLTAGE VFM (V)
Tj=25°C
VD=17V
VD=15V
VD=13V
VD=15V
Tj=25°C
Tj=125°C
Ic=75A
Tj=25°C
T
j
=125°C
VD=15V
Tj=25°C
T
j
=125°C
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
SWITCHING TIME (t
c(on)
, t
c(off)
) CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
SWITCHING TIME ton, toff (μs)
0.1
1
10
1 10 100
SWITCHING TIME tc(on), tc(off) (μs)
0.01
0.1
1
110100
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
INVERTER PART
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CONVERTER PART
SWITCHING ENERGY Eon, Eoff (mJ/pulse)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20406080
SWITCHING ENERGY Eon, Eoff (mJ/pulse)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 20406080
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
toff
ton
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
tc(off)
tc(on)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Eoff
Eon
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Eoff
Eon
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10
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
INVERTER PART
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
CONVERTER PART
REVERSE RECOVERY TIME trr (μs)
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0 20406080
10
20
30
40
50
60
70
80
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (μs)
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0 20406080
10
15
20
25
30
35
40
45
REVERSE RECOVERY TIME trr (μs)
EMITTER CURRENT IE (A) EMITTER CURRENT IE (A)
FREE WHEELING DIODE
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
INVERTER PART
FREE WHEELING DIODE
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
CONVERTER PART
REVESE RECOVERY ENERGY Err (mJ/pulse)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 20406080
REVESE RECOVERY ENERGY Err (mJ/pulse)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 20406080
EMITTER CURRENT IE (A) EMITTER CURRENT IE (A)
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
Irr
trr
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load Irr
trr
Vcc=300V
VD=15V
Tj=25°C
Tj=125°C
Inductive Load
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11
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
ID VS. fc CHARACTERISTICS
(TYPICAL)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
ID (mA)
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25
UVt / UVr (V)
0
2
4
6
8
10
12
14
16
18
20
-50 0 50 100 150
fc (kHz) Tj (°C)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
INVERTER PART & CONVERTER PART
SC
(SC of Tj=25°C is normalized 1)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 0 50 100 150
Tj (°C)
VD=15V
Tj=25°C
T
j
=125°C
N side
P side
UVt
UVr
VD=15V
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B6L1C060
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2011
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
INVERTER PART
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
CONVERTER PART
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME t (sec) TIME t (sec)
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.62 K/W
FWDi Part;
Per unit base: Rth(j-c)D=1.06K/W
Single Pulse
IGBT Part;
Per unit base: Rth(j-c)Q=0.62 K/W
FWDi Part;
Per unit base: Rth(j-c)D=1.06K/W
Di part
Per unit base: Rth(j-c)D=1.06K/W
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