BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE TO-3 1 2 APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 3 3 2 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Unit V CES Collector-Emitter Voltage (V BE = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 700 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 8 A Collector Peak Current (tp < 5 ms) 15 IC I CM Parameter P tot T otal Dissipation at T c = 25 o C T s tg Storage Temperature Tj June 1996 Max. O perating Junction Temperature TO - 3 TO - 218 150 125 -65 to 150 -65 to 150 150 150 A ISOW ATT218 50 W -65 to 150 o C 150 o C 1/8 BU208D/508D/508DFI THERMAL DATA R thj -ca se Thermal Resistance Junction-case TO-3 T O-218 ISOW AT T218 1 1 2.5 Max o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CES Parameter T est Con ditio ns Min . Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut- off Current (I C = 0) V EB = 5 V V CE(sat) Collector-Emitter Saturation Voltage I C = 4.5 A VCEO(s us) Collector-Emitter Sustaining Voltage I C = 100 m A V BE(sat ) Base-Emitter Saturation Voltage I C = 4.5 A ts tf INDUCT IVE LOAD Storage Time Fall Time I C = 4.5 A hF E = 2.5 V CC = 140 V LC = 0.9 mH LB = 3 H VF Diode F orward Voltage IF = 4 A fT Transition Frequency I C = 0.1 A I EBO T yp. o T j = 125 C IB = 2 A Max. Unit 1 2 mA mA 300 mA 1 V 700 V IB = 2 A 1.3 s ns 7 550 2 V CE = 5 V f = 5 MHz 7 V V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area (TO-3) 2/8 Safe Operating Area (TO-218/ISOWATT218) BU208D/508D/508DFI DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load Switching Time Inductive Load (see figure 1) Switching Time Percentance vs. Case 3/8 BU208D/508D/508DFI Figure 1: Inductive Load Switching Test Circuits 4/8 BU208D/508D/508DFI TO-3 (H) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 5/8 BU208D/508D/508DFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 - 16.2 - 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 - 12.2 - 0.480 O 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F R 6/8 1 2 3 P025A BU208D/508D/508DFI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 U 4.6 0.090 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 7/8 BU208D/508D/508DFI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .. 8/8