BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
■SGS-THOMSONPREFERRED SALESTYPES
■HIGH VOLTAGECAPABILITY
■U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)
■JEDEC TO-3 METALCASE
■NPN TRANSISTORWITH INTEGRATED
FREEWHEELINGDIODE
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds. INTERNAL SCHEMATIC DIAGRAM
June 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
VCEO Collector-Emitter Voltage (IB= 0) 700 V
VEBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 15 A
TO - 3 TO - 218 ISOWATT218
Ptot Total Dissipation at Tc=25o
C 150 125 50 W
Tstg Storage Temperature -65 to 150 -65 to 150 -65 to 150 oC
TjMax. Operating Junction Temperature 150 150 150 oC
123
TO-218 ISOWATT218 123
12
TO-3
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THERMAL DATA
TO-3 TO-218 ISOWATT218
Rthj-case Thermal Resistance Junction-case Max 1 1 2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unlessotherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE = 1500 V
VCE = 1500 V Tj= 125 oC1
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB = 5 V 300 mA
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=4.5A I
B=2A 1 V
V
CEO(sus) Collector-Emitter
Sustaining Voltage IC=100mA 700 V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=4.5A I
B= 2 A 1.3 V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC=4.5A h
FE =2.5 V
CC =140V
L
C=0.9mH L
B=3µH7
550 µs
ns
VFDiode Forward Voltage IF=4A 2 V
f
TTransition Frequency IC=0.1A V
CE = 5 V f = 5 MHz 7 MHz
∗
Pulsed: Pulse duration = 300 µs, dutycycle 1.5 %
Safe OperatingArea (TO-3) Safe OperatingArea (TO-218/ISOWATT218)
BU208D/508D/508DFI
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DC CurrentGain
Base Emitter SaturationVoltage
Switching Time InductiveLoad (see figure 1)
CollectorEmitter SaturationVoltage
Switching Time InductiveLoad
Switching Time Percentance vs. Case
BU208D/508D/508DFI
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Figure 1: InductiveLoadSwitching Test Circuits
BU208D/508D/508DFI
4/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.7 0.460
B 0.96 1.10 0.037 0.043
C 1.70 0.066
D 8.7 0.342
E 20.0 0.787
G 10.9 0.429
N 16.9 0.665
P 26.2 1.031
R 3.88 4.09 0.152 0.161
U 39.50 1.555
V 30.10 1.185
E
B
R
C
DA
P
G
N
V
U
O
P003N
TO-3 (H) MECHANICAL DATA
BU208D/508D/508DFI
5/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
R
A
C
D
E
H
F
G
L6
¯
L3
L2
L5
123
TO-218 (SOT-93) MECHANICAL DATA
P025A
BU208D/508D/508DFI
6/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L1
A
C
D
E
H
G
M
F
L6
123
U
L5
L4
D1
N
L3
L2
ISOWATT218 MECHANICAL DATA
P025C
BU208D/508D/508DFI
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Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent orpatent rightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
writtenapprovalof SGS-THOMSON Microelectonics.
1996SGS-THOMSONMicroelectronics- Printedin Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
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BU208D/508D/508DFI
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