MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N3740A Features * * PNP Silicon Power Transistors Medium-power amplifier applications With TO-66 package Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 60 60 7.0 10 4.0 25 -55 to +150 -55 to +150 Unit V V V A A W O C O C TO-66 A E F K D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage* (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=60Vdc, IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) 60 --- Vdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO --- 100 uAdc --- 0.5 mAdc 40 --- --- 30 --- --- 20 --- --- 10 --- --- --- 0.6 Vdc --- 1.0 Vdc U V hFE(2) hFE(3) hFE(4) V CE(sat) V BE(sat ) fT Forward Current Transfer ratio (IC=100mAdc, V CE=1.0Vdc) Forward Current Transfer ratio (IC=250mAdc, V CE=1.0Vdc) Forward Current Transfer ratio (IC=500mAdc, V CE=1.0Vdc) Forward Current Transfer ratio (IC=1.0Adc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=1.0Adc, IB =125mAdc) Base-Emitter Saturation Voltage (IC=250mAdc,V CE=1.0Vdc) Transition Frequency (VCE=10Vdc, IC=100mAdc, f=1.0MHZ) 3.0 --- MH Z L H 2 1 ON CHARACTERISTICS hFE(1) C PIN 1. PIN 2. CASE. G B BASE EMITTER COLLECTOR DIMENSIONS DIM A B C D E F G H K L U V INCHES MIN MAX .531 .571 --.728 .250 .340 .035 .043 --.122 .050 .079 .190 .210 .122 .360 .413 .540 .898 .913 .150 .165 MM MIN 13.5 --6.35 0.90 --1.27 4.83 3.10 9.15 13.70 22.80 3.80 MAX 14.5 18.5 8.63 1.10 3.10 2.00 5.33 NOTE 10.50 23.20 4.20 www.mccsemi.com Revision: 2 2003/04/30