2N2102 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)65 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (oC)200o I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m @I(B) (A) (Test Condition)15m h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)150m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)50m @V(CE) (V) (Test Condition)10 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.