VS-VSK.136..PbF, VS-VSK.142..PbF, VS-VSK.162..PbF Series
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Revision: 27-Jul-2018 2Document Number: 94513
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.136 VSK.142 VSK.162 UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 135 140 160 A
85 85 85 °C
Maximum RMS on-state current IT(RMS) As AC switch 300 310 355
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 10 ms No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3200 4500 4870
t = 8.3 ms 3360 4712 5100
t = 10 ms 100 % VRRM
reapplied
2700 3785 4100
t = 8.3 ms 2800 3963 4300
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
51.5 102 119
kA2s
t = 8.3 ms 47 92.5 108
t = 10 ms 100 % VRRM
reapplied
36.5 71.6 84
t = 8.3 ms 33.3 65.4 76.7
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 515.5 1013 1190 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 0.86 0.83 0.8 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 1.05 1 0.98
Low level value on-state
slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum 2.02 1.78 1.67
m
High level value on-state
slope resistance rt2 (I > x IT(AV)), TJ maximum 1.65 1.43 1.38
Maximum on-state voltage drop VTM ITM = x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum forward voltage drop VFM ITM = x IT(AV), TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V
Maximum holding current IHAnode supply = 6 V initial IT = 30 A, TJ = 25 °C 200
mA
Maximum latching current ILAnode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 μs, TJ = 25 °C 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time tgd TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
1
μs
Typical rise time tgr 2
Typical turn-off time tqITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 50 to 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = 125 °C 50 mA
RMS insulation voltage VINS 50 Hz, circuit to base,
all terminals shorted, t = 1 s 3500 V
Critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum,
exponential to 67 % rated VDRM 1000 V/μs