Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
GT100DA120U
Vishay Semiconductors
Document Number: 93196 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
•HEXFRED
® antiparallel diodes with ultrasoft reverse
recovery
•T
J maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low VCE(on)
• Low EMI, requires less snubbing
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
VCES 1200 V
IC DC 100 A at 119 °C
VCE(on) typical at 100 A, 25 °C 1.73 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONSMAX. UNITS
Collector to emitter voltage VCES 1200 V
Continuous collector current IC (1) TC = 25 °C 258
A
TC = 80 °C 174
Pulsed collector current ICM 450
Clamped inductive load current ILM 450
Diode continuous forward current IF
TC = 25 °C 50
TC = 80 °C 34
Peak diode forward current IFSM 180
Gate to emitter voltage VGE ± 20 V
Power dissipation, IGBT PD
TC = 25 °C 893
W
TC = 119 °C 221
Power dissipation, diode PD
TC = 25 °C 176
TC = 119 °C 44
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
GT100DA120U
Vishay Semiconductors Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93196
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 250 μA 1200 - -
VCollector to emitter voltage VCE(on)
VGE = 15 V, IC = 100 A - 1.73 2.1
VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2
Gate threshold voltage VGE(th) VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9
Temperature coefficient of
threshold voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 1200 V - 0.6 100 μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.6 10 mA
Forward voltage drop VFM
IF = 40 A, VGE = 0 V - 2.81 3.3
V
IF = 40 A, VGE = 0 V, TJ = 125 °C - 3.07 3.4
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss Eon IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode recovery
(see fig. 20)
-5.2-
mJ
Turn-off switching loss Eoff -7.1-
Total switching loss Etot - 12.3 -
Turn-on switching loss Eon
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
-6.1-
Turn-off switching loss Eoff -9.8-
Total switching loss Etot - 15.9 -
Turn-on delay time td(on) - 350 -
ns
Rise time tr-75-
Turn-off delay time td(off) - 374 -
Fall time tf- 493 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 450 A, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
Fullsquare
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V
- 164 194 ns
Diode peak reverse current Irr -1215A
Diode recovery charge Qrr - 994 1455 nC
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs,
Vrr = 400 V, TJ = 125 °C
- 230 273 ns
Diode peak reverse current Irr - 16.5 20 A
Diode recovery charge Qrr - 1864 2730 nC
Short circuit safe operating area SCSOA
TJ = 150 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 900 V,
Vp = 1200 V
10 μs
GT100DA120U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A Vishay Semiconductors
Document Number: 93196 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
VGE = 15 V
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range TJ, TStg - 40 - 150 °C
Junction to case
IGBT
RthJC
- - 0.14
°C/WDiode - - 0.71
Case to sink per module RthCS -0.1-
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight - 30 - g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
93196_01
40 80 120 200160 240 280
0
160
100
120
140
20
40
60
80
IGBT DC
IC (A)
VCE (V)
1 10 100 1000 10 000
0.01
0.1
1
93196_02
1000
10
100
I
C
(A)
V
CE
(V)
04.00.5 1.0 1.5 2.0 2.5 3.0 3.5
0
93196_03
300
100
200
275
75
175
250
50
150
225
25
125
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
402010 30 50 60
0
100
160
180
0
40
60
140
80
120
20
93196_04
Diode DC
GT100DA120U
Vishay Semiconductors Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93196
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
Fig. 5 - Typical Diode Forward Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V,
Rg = 5 , VGE = 15 V
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V,
Rg = 5 , VGE = 15 V
IF (A)
VFM (V)
07123456
0
93196_05
200
100
75
175
50
150
25
125
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
ICES (mA)
VCES (V)
100 1300300 500 700 900 1100
0.00001
93196_06
10
0.1
0.01
0.001
0.0001
1
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
Vgeth (V)
IC (mA)
081246357
3.0
3.5
4.0
4.5
5.0
5.5
93196_07
6.0
TJ = 25 °C
TJ = 125 °C
VCE (V)
TJ (°C)
20 16040 80 12060 100 140
1.00
1.50
2.00
93196_08
2.75
1.25
1.75
2.25
2.50
100 A
150 A
50 A
27 A
Energy (mJ)
IC (A)
20 30 50 907040 60 10080 110
1
93196_09
11
5
9
7
3
6
10
8
4
2
Eon
Eoff
Switching Time (ns)
I
C
(A)
20 30 50 70 9060 80 10040 110
10
93196_10
1000
100
td(off)
td(on)
tf
tr
GT100DA120U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A Vishay Semiconductors
Document Number: 93196 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 720 V, VGE = 15 V
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 720 V,
IC = 100 A, VGE = 15 V
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Energy (mJ)
R
g
(Ω)
01020 4030 50
5
93196_11
40
20
35
30
25
15
10
Eon
Eoff
Switching Time (ns)
R
g
(Ω)
010 304020 50
10
93196_12
10 000
1000
100
td(off)
td(on)
tf
tr
trr (ns)
dIF/dt (A/μs)
100
93196_13
1000
90
310
150
190
270
130
110
170
230
290
250
210 TJ = 125 °C
TJ = 25 °C
Irr (A)
dIF/dt (A/μs)
100
93196_14
1000
0
45
25
35
40
20
30
10
15
5
TJ = 25 °C
TJ = 125 °C
Qrr (nC)
dIF/dt (A/μs)
100 1000
0
93196_15
3000
1000
1500
2500
2000
500
TJ = 125 °C
TJ = 25 °C
GT100DA120U
Vishay Semiconductors Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93196
6DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
0.001
0.01
0.1
1
0.00001
93196_16
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
0.1
10
1
0.00001
93196_17
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
GT100DA120U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A Vishay Semiconductors
Document Number: 93196 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7
Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit
Fig. 19a - Switching Loss Test Circuit
Fig. 19b - Switching Loss Waveforms Test Circuit
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
VC *
2
1
Rg
VCC
D.U.T.
R = VCC
ICM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
t = 5 µs
t
d(on)
tf
tr
90 %
td(off)
10 %
90 %
10 %
5 %
VC
IC
Eon Eoff
Ets = (Eon + Eoff)
1
2
3
GT100DA120U
Vishay Semiconductors Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93196
8DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
1- Insulated Gate Bipolar Transistor (IGBT)
2- T = Trench IGBT technology
3- Current rating (100 = 100 A)
4- Circuit configuration (D = Single switch with antiparallel diode)
5- Package indicator (A = SOT-227)
6- Voltage rating (120 = 1200 V)
7- Speed/type (U = Ultrafast)
Device code
5132467
G T 100 D A 120 U
3 (C)
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
Document Number: 95036 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 28-Aug-07 1
SOT-227
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
4
12
3
12.50 (0.492)
7.50 (0.295)
Ø 4.40 (0.173)
Ø 4.20 (0.165)
30.20 (1.189)
29.80 (1.173)
15.00 (0.590)
6.25 (0.246) 25.70 (1.012)
25.20 (0.992)
-B-
R full
Chamfer
2.00 (0.079) x 45°
2.10 (0.082)
1.90 (0.075)
8.10 (0.319)
7.70 (0.303)
4 x
2.10 (0.082)
1.90 (0.075)
-C-
0.12 (0.005)
12.30 (0.484)
11.80 (0.464)
MMM
0.25 (0.010) CA B
4 x M4 nuts
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Revision: 02-Oct-12 1Document Number: 91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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