For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Functional Diagram
Features
High P1dB Output Power: +31 dBm
High Psat Output Power: +33 dBm
High Gain: 12 dB
High Output IP3: +41 dBm
Supply Voltage: Vdd = +10V to +15V @ 500 mA
50 Ohm Matched Input/Output
Die Size: 2.99 x 1.84 x 0.1 mm
Typical Applications
The HMC998 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
General Description
The HMC998 is a GaAs MMIC PHEMT Distributed
Power Amplier die which operates between DC
and 22 GHz. The amplier provides 12 dB of gain,
+41 dBm output IP3 and +31 dBm of output power at
1 dB gain compression while requiring 500 mA from
a +15V supply. This versatile PA exhibits a positive
gain slope from 1 to 18 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC998 amplier I/Os are internally matched to
50 Ohms facilitating integration into mutli-chip-
modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specications, TA = +25° C, Vdd = +15V, Vgg2 = +9.5V, Idd = 500 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 0.1 - 2 2 - 18 18 - 22 GHz
Gain 9.5 11.5 10.5 12.5 10.5 12.5 dB
Gain Flatness ±0.1 ±0.7 ±0.6 dB
Gain Variation Over Temperature 0.006 0.11 0.016 dB/ °C
Input Return Loss -20 -20 -15 dB
Output Return Loss -7 -20 -20 dB
Output Power for 1 dB Compression (P1dB) 29 31 29 31.5 27 30 dBm
Saturated Output Power (Psat) 33 33.5 33 dBm
Output Third Order Intercept (IP3) 41 41 40 dBm
Noise Figure 10 4 5 dB
Supply Current
(Idd) (Vdd= 15V, Vgg1= -0.7V Typ.) 500 500 500 mA
* Adjust Vgg1 between -2 to 0V to achieve Idd = 500mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
Noise Figure vs. Frequency
-30
-20
-10
0
10
20
0 5 10 15 20 25 30
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
GAIN (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-55C
RESPONSE (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
10
20
0.0001 0.001 0.01 0.1 1 10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
3
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Psat vs. Vdd
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
@ Pout = 18 dBm Tone
P1dB vs. Vdd
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
10V
12V
14V
15V
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
10V
12V
14V
15V
Psat (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-55C
IP3 (dBm)
FREQUENCY (GHz)
Output IP3 vs. Vdd
@ Pout = 18 dBm Tone
25
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18 20 22
10V
12V
14V
15V
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Output IP3 vs. Output Power @ 11 GHz
Power Compression @ 20 GHz
Second Harmonics vs.
Temperature @ Pout = 18 dBm
Power Dissipation
Power Compression @ 4 GHz
Power Compression @ 10 GHz
25
30
35
40
45
50
10 12 14 16 18 20 22
400 mA
450 mA
500 mA
IP3 (dBm)
OUTPUT POWER (dBm)
0
5
10
15
20
25
30
35
0 5 10 15 20 25
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
0 5 10 15 20 25
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
5
10
15
20
25
30
35
0 5 10 15 20 25
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
0 2 4 6 8 10 12 14 16 18 20 22
Max Pdis @ 85C
2 GHz
10 GHz
20 GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+25C
+85C
-55C
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
5
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +17 Vd c
Gate Bias Voltage (Vgg1) -3 to 0 Vdc
Gate Bias Voltage (Vgg2) Vgg2 = (Vdd - 6.5V) to (Vdd-4.5V)
RF Input Power (RFIN) +27 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 129 mW/°C above 85
°C)
8.4 W
Thermal Resistance
(channel to die bottom) 7.73 °C/ W
Output Power into VSWR >7:1 +32 dBm
Storage Temperature -65 to 150°C
Operating Temperature -55 to 85 °C
Vdd (V) Idd (mA)
+12 500
+14 500
+15 500
Typical Supply Current vs. Vdd
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Second Harmonics vs. Pout
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
Second Harmonics vs.
Vdd @ Pout = 18 dBm
0
10
20
30
40
50
60
70
0 4 8 12 16 20 24
+12V
+14V
+15V
SECOND HARMONIC (dBc)
FREQUENCY(GHz)
Reverse Isolation vs Temperature
-80
-70
-60
-50
-40
-30
-20
-10
0
0 4 8 12 16 20 24
+25C
+85C
-55C
ISOLATION (dB)
FREQUENCY (GHz)
Vgg1 adjust to achieve Idd = 500 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. TYPICAL BOND PAD IS 0.004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±0.002”
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] For more information refer to the “Packaging
Information” Document in the Product Support Section of
our website .
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
7
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Pad Number Function Description Interface Schematic
1RFIN This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
2VGG2
Gate control 2 for amplier. Attach bypass
capacitor per application circuit herein. For nominal
operation +9.5V should be applied to Vgg2.
4, 7 ACG2, ACG4 Low frequency termination. Attach bypass
capacitor per application circuit herein.
3ACG1 Low frequency termination. Attach bypass
capacitor per application circuit herein.
5 RFOUT & VDD RF output for amplier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
6ACG3 Low frequency termination. Attach bypass
capacitor per application circuit herein.
8VGG1
Gate control 1 for amplier. Attach bypass
capacitor per application circuit herein. Please
follow “MMIC Amplier Biasing Procedure”
application note.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Descriptions
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
8
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee
with low series resistance and capable of providing 800mA
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC998
v01.0811
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 22 GHz
Notes: