Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) () ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 * TrenchFET(R) Power MOSFET * High-Efficient PWM Optimized * 100 % UIS and Rg Tested Pb-free Available RoHS* COMPLIANT SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4800BDY-T1 Si4800BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 25 Continuous Drain Current (TJ = 150 C)a, b TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a, b Single-Pulse Avalanche Energy Maximum Power Dissipationa, b 9 IS L = 0.1 mH TA = 25 C TA = 70 C A 2.3 15 EAS 11.25 mJ 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range 5.0 40 IAS PD V 6.5 7.0 IDM Pulsed Drain Current (10 s Pulse Width) Avalanche Current ID Unit - 55 to 150 W C THERMAL RESISTANCE RATINGS Limits Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 sec Steady State Steady State RthJA RthJF Typ Max 40 50 70 95 24 30 Unit C/W Notes: a. Surface Mounted on FR4 Board. b. t 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72124 S-70138-Rev. G, 22-Jan-07 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min 0.8 Typ Max Unit Static VGS(th) VDS = VGS, ID = 250 A 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Gate Threshold Voltage Forward Transconductancea Diode Forward Voltage a VDS 5 V, VGS = 10 V 30 A A VGS = 10 V, ID = 9 A 0.0155 0.0185 VGS = 4.5 V, ID = 7 A 0.023 0.030 gfs VDS = 15 V, ID = 9 A 16 VSD IS = 2.3 A, VGS = 0 V 0.75 1.2 8.7 13 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5.0 V, ID = 9 A 3.5 0.5 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.5 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 IF = 2.3 A, di/dt = 100 A/s 1.4 2.2 7 15 12 20 32 50 14 25 30 60 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72124 S-70138-Rev. G, 22-Jan-07 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 VGS = 10 thru 5 V 35 4V TC = - 55 C 35 25 C 30 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 3V 15 10 25 125 C 20 15 10 5 5 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1200 0.040 C - Capacitance (pF) r DS(on) - On-Resistance () 1000 0.032 VGS = 4.5 V 0.024 VGS = 10 V 0.016 Ciss 800 600 400 Coss 0.008 200 Crss 0 0.000 0 5 10 15 20 25 0 30 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.8 6 VDS = 15 V ID = 9 A 5 1.6 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 4 3 2 VGS = 10 V ID = 9 A 1.4 1.2 1.0 0.8 1 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72124 S-70138-Rev. G, 22-Jan-07 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.06 50 r DS(on) - On-Resistance () I S - Source Current (A) 0.05 TJ = 150 C 10 0.04 ID = 9 A 0.03 0.02 0.01 TJ = 25 C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 150 0.2 0.0 90 Power (W) V GS(th) Variance (V) 120 ID = 250 A - 0.2 60 - 0.4 30 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (C) 10-1 1 10 Time (sec) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 *Limited by rDS(on) I D - Drain Current (A) 10 1 ms 1 10 ms 0.1 100 ms 1s 10 s TC = 25 C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 72124 S-70138-Rev. G, 22-Jan-07 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72124. Document Number: 72124 S-70138-Rev. G, 22-Jan-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1