RLS245 Diode, switching, leadless These diodes are suitable for high density surface mounting on printed circuit boards. Features * available in LLDS (LL-34) package * part marking, see following table Applications high voltage rectification Dimensions (Units : mm) CATHODE BAND 0.4 / 0.4 _uwf it at | Pak) gras .5 Max, <> A=14 The gap between the glass tube and the pole can be set | to either the anode or the *+--- 50 -- cathode depending on the manufacturing process. Cathode band color Part no. Color Absolute maximum ratings (T, = 25C) RLS245 White Parameter Symbol Limits Unit Peak reverse voltage Vam 250 Vv DC reverse voltage Vr 220 Vv Peak forward current lam 625 mA Mean rectifying current lo 200 mA Surge current (1 s) Isurge 1000 mA Power dissipation Py 300 mW Junction temperature Tj 175 C Storage temperature T stg 65 ~ +175 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol| Min |Typicai] Max Unit Conditions Forward voltage Ve 1.13 1.5 Voip = 200 mA Reverse current IR 0.05 2 HA |VR = 250V Capacitance between _ _ terminals C, 0.95 3 pF |VR=0V,f=1 MHz Reverse recovery time ter 75, ns {lp = 20 MA, Ip = 20 mA, R, = 50 2 Diodes ROM 93 RLS245 Switching diodes Electrical characteristic curves 200 10 000 100 5 000 g 2000 a z 1000 _ - 2 b w 1 5 & w a? & 200 Oo f 2 w 100 . = 2 + , z x 50 Ta=25C 5 > Ls ww 0. ira 10 026 10 12 14 18 0 200 FORWARD VOLTAGE : Vr iV! REVERSE VOLTAGE : Va (V3 Figure 1 Figure 2 gl 40 | | 10 mA = 5 tr mA 3 i E. 120]- | | - a 1.0 t | z (100 ; z 2 : a et | & 0. > aff wl ive oi 2 6 L wy 08 S = Wi ui 40 ui |. a a a WO? w a a Ww 20 = 3 z nO <q REVERSE VOLTAGE : va iV) FORWARD CURRENT : ir (mA} Figure 3 Figure 4 " PA) TUM TE 12 | ! | | | . HH 40 LL | DLT L T 0.01 1F Diode under test ; HULL L 2 eHhNI + | a | pl rt >- 5 N | | z N Fa ny & 6 \ Pood - Pulse generator 5 kQ Sampling a N Output: 50 W S50 Q [oscilloscope wo th 2 H! mn 2 % 2 _ rT ; T+ THT ' o- | I (000 Test circuit for measurin PULSE WIDTH : Tw (ms) reverse recovery time (t,, Figure 5 Figure 6 94 ROM Diodes