© 1987
SILICO N SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
DATA SHEET
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
•Low capacitance: Ct = 4.0 pF MAX.
•High speed switching: trr = 3.0 ns MAX.
•Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage VRM 100 V
DC Reverse Vo ltage VR100 V
Peak Forward Current IFM 300 mA
Average Rectified Current IO100 mA
DC Forward Current IF100 mA
Maximum Temperatures
Junction Temperature Tj150 °C
Storage Temperature Range Tstg –55 to + 150 °C
Thermal Resistance
Junction to Ambient Rth(j-a) 0.85 °C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTE RISTI CS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF = 10 mA 720 850 mV
VF2 IF = 50 mA 850 1000 mV
Forward Voltage
VF3 IF = 100 mA 950 1200 mV
Reverse Current IRVR = 100 V 1.0
µ
A
Capacitance CtVR = 0 V, f = 1. 0 MHz 2.0 4.0 pF
Reverse Recovery T i me trr IF = 10 m A , VR = 6 V, RL = 100 Ω,
See Test Ci rcuit. 3.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3
+0.1
−0
0.15
+0.1
−0.05
0.3
0.65
0 to 0.1
0.3 0.65
+0.1
−0
CONNECTION DIAGRAM (Top View)
2
1
3
1. N.C.
2. Anode
3. Cathode
Marking : A14
Data Sheet D16310EJ2V0DS
2
1SS305
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD CURRENT vs.
FORW ARD V OLTAGE
V
F
- Forward Voltage - V
0 0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
I
F
- Forward Current - mA
T
A
= 100˚C
T
A
= 25˚C
T
A
= −50˚C
FORW ARD V OLTAGE TEMPERATURE
COEFFICIENT vs. FORWARD CURRENT
I
F
- Forward Current - mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
0
1.0
2.0
3.0
∆V
F
- Forward Voltage Temperature Coefficient - mV/˚C
REVERSE CURRENT vs.
REVERSE V OLTA GE
VR - Reverse Voltage - V
010203040506070
0.0001
0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
IR - Reverse Current - µA
T
A
= 100˚C
T
A
= 25˚C
TERMINAL CAPACITANCE vs.
REVERSE V OLTA GE
V
R
- Reverse Voltage - V
12 468102030
0
1.0
2.0
3.0
C
t
- Terminal Capacitance - pF
f = 1.0 MHz
T
A
= 25˚C
Data Sheet D16310EJ2V0DS 3
1SS305
SWITCHING CHARACTERISTICS TEST CIRCUIT
Reverse recovery time : trr
Pulse
Generator
(50 Ω)
Sampling
Oscilloscope
(50 Ω)
DC
Source
Trigger
0.02 µF D.U.T.
3 kΩ
+
−I
F
= 10 mA, V
R
= 6.0 V, R
L
= 100 Ω
i
rr
= 0.1
•
I
r
Input V oltage
Waveform to Diode Output Current
Waveform in Diode
V
F
I
F
V
R
I
r
0
0
t
rr
0.1
•
I
r
1SS305
M8E 00. 4
The information in this document is current as of July, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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