SEMICONDUCTOR KTC3114 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. A B D C FEATURE High DC Current Gain : hFE=600 E F 3600. G H MAXIMUM RATING (Ta=25 CHARACTERISTIC DIM A B C D E F G H J K L M N O P J ) K SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 1.5 W Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC L M N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A 600 - 3600 hFE(Note) DC Current Gain Collector- Emitter Saturation Voltage Transition Frequency VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V fT VCE=10V, IC=10mA 100 250 - MHz - 3.5 - pF - 0.5 - dB - 0.3 - dB Cob Collector Output Capacitance NF(1) Noise Figure NF(2) Note: hFE Classification 2003. 7. 24 A:600 1800, VCE=6V, IC=2mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=100Hz, Rg=10k VCE=6V, IC=0.1mA f=1kHz, Rg=10k B:1200 3600 Revision No : 1 1/3 KTC3114 I C - VCE h FE - I C 140 EMITTER 120 Ta=25 C 5k 400 COMMON 3k 200 100 100 80 80 60 60 40 50 40 30 20 I B =10A 20 0 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 160 0 1 2 3 4 5 1k 6 Ta=-25 C 500 300 100 50 30 0.1 0 Ta=100 C Ta=25 C COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER VCE =6V 0.3 1 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1 0.3 0.1 0.05 Ta=100 C 0.03 0.01 0.1 Ta=25 C Ta=-25 C 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) V BE(sat) - I C f T - IE COMMON EMITTER I C /I B =10 Ta=25 C 3 1 0.5 0.3 0.3 1 3 100 200 COMMON EMITTER IC / I B =10 0.5 BASE-EMITTER VOLTAGE V BE (V) 5 0.1 0.1 10 30 COLLECTOR CURRENT I C (mA) 2003. 7. 24 1.2 TRANSITION FREQUENCY f T (MHz) 0 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 Ta=-25 C 120 30 VCE(sat) - I C Ta=25 C 140 Ta=100 C COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =6V 10 COLLECTOR CURRENT I C (mA) I C - V BE 160 3 Revision No : 1 100 200 100 200 2k COMMON EMITTER V CE =10V Ta=25 C 1k 500 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 EMITTER CURRENT I E (mA) 2/3 KTC3114 COLLECTOR OUTPUT CAPACITANCE C ob (pF) C ob - V CB 100 I E =0 f=1MHz Ta=25 C 50 30 10 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) 2003. 7. 24 Revision No : 1 3/3