MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOSTMP6 600VCoolMOSTMP6PowerTransistor IPW60R041P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOSTMP6PowerTransistor IPW60R041P6 1Description TO-247 CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOSTMP6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features *IncreasedMOSFETdv/dtruggedness *ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 41 m Qg.typ 170 nC ID,pulse 267 A Eoss@400V 20.5 J Body diode di/dt 300 A/s Type/OrderingCode Package Marking IPW60R041P6 PG-TO 247 6R041P6 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 2Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current 1) Values Unit Note/TestCondition 77.5 49.0 A TC=25C TC=100C - 267 A TC=25C - - 1954 mJ ID=13.4A; VDD=50V; see table 10 EAR - - 2.96 mJ ID=13.4A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 13.4 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-247 Ptot - - 481 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque (Non FullPAK) TO-247 - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 67.2 A TC=25C Diode pulse current IS,pulse - - 267 A TC=25C Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25C see table 8 Maximum diode commutation speed dif/dt - - 300 A/s VDS=0...400V,ISD<=IS,Tj=25C see table 8 Min. Typ. Max. ID - - Pulsed drain current 2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-247 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.26 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 4Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=2.96mA - 10 5 - A VDS=600,VGS=0V,Tj=25C VDS=600,VGS=0V,Tj=150C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.037 0.096 0.041 - VGS=10V,ID=35.5A,Tj=25C VGS=10V,ID=35.5A,Tj=150C Gate resistance RG - 1 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 8180 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 310 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 260 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) - 1200 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 29 - ns VDD=400V,VGS=13V,ID=44.4A, RG=1.7;seetable9 Rise time tr - 27 - ns VDD=400V,VGS=13V,ID=44.4A, RG=1.7;seetable9 Turn-off delay time td(off) - 90 - ns VDD=400V,VGS=13V,ID=44.4A, RG=1.7;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=44.4A, RG=1.7;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 50 - nC VDD=400V,ID=44.4A,VGS=0to10V Gate to drain charge Qgd - 59 - nC VDD=400V,ID=44.4A,VGS=0to10V Gate charge total Qg - 170 - nC VDD=400V,ID=44.4A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=44.4A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=44.4A,Tj=25C 630 - ns VR=400V,IF=44.4A,diF/dt=100A/s; see table 8 - 19 - C VR=400V,IF=44.4A,diF/dt=100A/s; see table 8 - 56 - A VR=400V,IF=44.4A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 103 500 1 s 450 10 s 102 400 350 100 s 1 ms 101 10 ms ID[A] Ptot[W] 300 250 100 DC 200 10-1 150 100 10-2 50 0 0 25 50 75 100 125 10-3 150 100 101 102 TC[C] 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 s 2 10 10 s 100 s 0.5 1 ms 101 10-1 0.2 ZthJC[K/W] ID[A] 10 ms 100 DC 10-1 0.1 0.05 10-2 0.02 0.01 single pulse 10-2 10-3 100 101 102 103 10-3 10-5 10-4 10-3 VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 10-1 100 tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 280 170 20 V 20 V 160 10 V 10 V 150 240 8V 140 130 200 120 8V 110 7V 100 ID[A] ID[A] 160 7V 120 90 80 70 6V 60 50 80 40 40 0 5.5 V 30 6V 20 5.5 V 5V 4.5 V 0 5 10 5V 10 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.15 0.12 0.14 0.11 0.10 0.13 0.09 0.12 RDS(on)[] 0.11 5.5 V 6V 6.5 V 0.10 RDS(on)[] 0.08 7V 10 V 0.09 0.07 0.06 98% typ 0.05 20 V 0.04 0.08 0.03 0.07 0.02 0.06 0.05 0.01 0 10 20 30 40 50 60 70 80 0.00 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=35.5A;VGS=10V 9 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 300 10 9 25 C 250 8 120 V 480 V 7 200 VGS[V] ID[A] 6 150 150 C 5 4 100 3 2 50 1 0 0 2 4 6 8 10 12 0 14 0 50 100 VGS[V] 150 200 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=44.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 2000 1800 1600 1400 101 IF[A] EAS[mJ] 1200 125 C 25 C 100 1000 800 600 400 200 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 75 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 100 125 150 Tj[C] EAS=f(Tj);ID=13.4A;VDD=50V 10 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 700 680 Ciss 104 660 640 C[pF] VBR(DSS)[V] 103 620 600 Coss 102 580 Crss 560 101 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 28 26 24 22 20 Eoss[J] 18 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 7PackageOutlines Figure1OutlinePG-TO247,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 8AppendixA Table11RelatedLinks * IFXCoolMOSTMP6Webpage:www.infineon.com * IFXCoolMOSTMP6applicationnote:www.infineon.com * IFXCoolMOSTMP6simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2014-03-07 600VCoolMOSTMP6PowerTransistor IPW60R041P6 RevisionHistory IPW60R041P6 Revision:2014-03-07,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-07 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2014-03-07